HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE(sat) (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 1.8 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 66 A IC110 TC = 110C ICM TC = 25C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load, L = 100 H PC TC = 25C VISOL 50/60 Hz RMS t = 1 minute 35 A 152 A ICM = 76 @ 0.8 VCES A 140 W ISOPLUS 247 E153432 G G = Gate, E = Emitter Features C TJM 150 C z Tstg -55 ... +150 C z 300 C 5 g Weight Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. BVCES IC IC = 250 A, VGE = 0 V = 750 A 39N60B 39N60BD1 600 600 VGE(th) IC IC = 250 A, VCE = VGE = 500 A 39N60B 39N60BD1 2.5 2.5 ICES VCE = 0.8 * VCES TJ = 25C VGE = 0 V; note 1 TJ = 25C TJ = 125C TJ = 125C IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = IT, VGE = 15 V (c) 2004 IXYS All rights reserved 39N60B 39N60BD1 39N60B 39N60BD1 C = Collector V -55 ... +150 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Isolated Backside* E * Patent pending 2500 TJ C V 5.0 5.0 V V 200 650 1 3 A A mA mA 100 nA 1.8 V DCB Isolated mounting tab Meets TO-247AD package Outline z High current handling capability z Latest generation HDMOSTM process z MOS Gate turn-on - drive simplicity Applications z Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers z Advantages z Easy assembly High power density z Very fast switching speeds for high frequency applications z DS98738B(01/04) IXGR 39N60B IXGR 39N60BD1 Symbol gfs Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. IC = IT; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 19 39N60B 39N60BD1 S 2750 200 250 pF pF pF 50 pF 125 nC 25 nC 40 nC 25 ns Cres Qg Qge IC = IT, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff Inductive load, TJ = 25C 30 IC = IT, VGE = 15 V VCE = 0.8 * VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG td(on) Eoff 200 360 ns 4.0 6.0 mJ ns 39N60B 0.3 VCE = 0.8 * VCES, RG = Roff = 4.7 39N60BD1 1.0 Remarks: Switching times may increase 360 for VCE (Clamp) > 0.8 * VCES, higher TJ or 350 increased RG 6.0 mJ Eon tfi ns 30 Inductive load, TJ = 125C td(off) 500 ns IC = IT, VGE = 15 V RthJC mJ ns ns mJ 0.9 RthCK 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ns 250 25 tri ISOPLUS 247 OUTLINE 0.15 K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 Please see IXGH 39N60B data sheet for characteristic curves. K/W Reverse Diode (FRED) (IXGR39N60BD1 only) Characteristic Values (TJ = 25C, unless otherwise specified) Symbol Test Conditions min. typ. max. VF IF = 30A, VGE = 0 V, Note 1 IRM IF = 50A, VGE = 0 V, VR = 100 V TJ = 100C -diF/dt = 100 A/s IF = 1 A; -di/dt = 100 A/s; VR = 30 V t rr TJ = 150C 1.6 2.5 2.5 175 25 V V A ns ns 1.1 K/W RthJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505