© 2004 IXYS All rights reserved DS98738B(01/04)
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 66 A
IC110 TC= 110°C 35 A
ICM TC= 25°C, 1 ms 152 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 76 A
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 VCES
PCTC= 25°C 140 W
VISOL 50/60 Hz RMS t = 1 minute 2500 V
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight 5g
VCES = 600 V
IC25 =66 A
VCE(sat) = 1.8 V
tfi(typ) = 200 ns
HiPerFASTTM IGBT
ISOPLUS247TM
(Electrically Isolated Backside)
Preliminary data sheet
ISOPLUS 247
G = Gate, C = Collector
E = Emitter
* Patent pending
E153432
GCEIsolated Backside*
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BVCES IC= 250 µA, VGE = 0 V 39N60B 600 V
IC= 750 µA 39N60BD1 600
VGE(th) IC= 250 µA, VCE = VGE 39N60B 2.5 5.0 V
IC= 500 µA 39N60BD1 2.5 5.0 V
ICES VCE = 0.8 • VCES TJ = 25°C39N60B 200 µA
VGE = 0 V; note 1 TJ = 25°C39N60BD1 650 µA
TJ = 125°C39N60B 1 mA
TJ = 125°C39N60BD1 3 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IT, VGE = 15 V 1.8 V
Features
zDCB Isolated mounting tab
zMeets TO-247AD package Outline
zHigh current handling capability
zLatest generation HDMOSTM process
zMOS Gate turn-on
- drive simplicity
Applications
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
zAC motor speed control
zDC servo and robot drives
zDC choppers
Advantages
zEasy assembly
zHigh power density
zVery fast switching speeds for high
frequency applications
IXGR 39N60B
IXGR 39N60BD1
(D1)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 39N60B
IXGR 39N60BD1
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IT; VCE = 10 V, 19 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 2750 pF
39N60B 200 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 39N60BD1 250 pF
Cres 50 pF
Qg125 nC
Qge IC = IT, VGE = 15 V, VCE = 0.5 VCES 25 nC
Qgc 40 nC
td(on) 25 ns
tri 30 ns
td(off) 250 500 ns
tfi 200 360 ns
Eoff 4.0 6.0 mJ
td(on) 25 ns
tri 30 ns
Eon 39N60B 0.3 mJ
td(off) 39N60BD1 1.0 mJ
tfi 360 ns
350 ns
Eoff 6.0 mJ
RthJC 0.9 K/W
RthCK 0.15 K/W
Inductive load, TJ = 25°°
°°
°C
IC = IT, VGE = 15 V
VCE = 0.8 • VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°°
°°
°C
IC = IT, VGE = 15 V
VCE = 0.8 • VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ISOPLUS 247 OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Reverse Diode (FRED) (IXGR39N60BD1 only) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = 30A, VGE = 0 V, TJ = 150°C 1.6 V
Note 1 2.5 V
IRM IF = 50A, VGE = 0 V, VR = 100 V TJ = 100°C 2.5 A
-diF/dt = 100 A/µs 175 ns
trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V 25 ns
RthJC 1.1 K/W
Please see IXGH 39N60B data
sheet for characteristic curves.
