waar 1N4001 G/L1N4007G/L VISHAY Vishay Lite-On Power Semiconductor 1.0A Glass Passivated Rectifier Features @ Glass passivated die construction Diffused junction High current capability and low forward voltage drop @ Surge overload rating to 30A peak Plastic material - UL Recognition flammability classification 94V-0 14.451 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage 1N4001 G/L Vrru 50 Vv =Working peak reverse voltage 1N4002 G/L | =Vrawa 100 Vv =DC Blocking voltage 4N4003 G/L =VpR 200 V 1N4004 G/L 400 Vv 1N4005 G/L 600 Vv 1N4006 G/L 800 Vv 1N4007 G/L 1000 Vv Peak forward surge current lesm 30 A Average forward current Ta=/75C lEAy 1 A Junction and storage temperature range Ti=Tstg | 65...4175 | C Electrical Characteristics Tj = 25C Forward voltage IF=1A Ve 1 Vv Reverse current Ta=25C IR 5 vA Ta=1 25C IR 50 vA Reverse recovery time I-=0.5A, IR=1A, tr 2 us [-r=0.25A Diode capacitance VpR=4V, f=1MHz Cp 8 pF Thermal resistance junction to ambient RihuA 100 KW Rev. A2, 24-Jun-98 1 (4) 1N4001G/L1N4007G/L war Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) 1.0 N 100 N\ N 0.6 N 10 N 0.2 N Ieay Average Forward Current (A) S Cp Diode Capacitance ( pF ) \ 0 N 1.0 40 60 80 100 120 140 160 180 1.0 10 100 15551 Tamb Ambient Temperature (C ) 15554 Vr Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 10 100 < g @ 1.0 5 10 5 5 oO oO CT oO & B = g em ol ce 10 I I as 7) =25C = IF Pulse Width = 300 ps 2% Duty Cycle 0.01 0.1 0.6 0.8 1.0 1.2 1.4 16 0 20 40 60 80 100 120 140 15552 Ve Forward Voltage ( V ) 15555 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage <x 30 8.3ms Si .3 ms Single Half-Sine-Wave = JEDEC method 6 \ 2 20 N 5 N N z N 2 sy r 10 SQ x IM oO MN o Peed IL r i - 0 1 10 100 15553 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 1N4001G/L1N4007G/L VISHAY Dimensions in mm Vishay Lite-On Power Semiconductor "L" Suffix Designates A-405 Package No Suffix Designates UO-41 Package UO0-44 A-405 Uim Min Max Min Max A 25.40 - 25.40 - B 4.06 5.21 4.10 5.20 C 0.71 0.864 0.53 0.64 D 2.00 2.12 2.00 2.10 ALL Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: DO-41 0.30 grams, A-405 0,20 grams Mounting position: any Marking: type number 4 & technical. drawings according to DIN specifications 14447 Rev. A2, 24-Jun-98 1N4001G/L1N4007G/L Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98