BAS316 Taiwan Semiconductor 250mA, 100V SMD Switching Diode FEATURES KEY PARAMETERS Fast switching device (trr<4ns) Ideal for automated placement Moisture sensitivity level: level 1, per J-STD-020 Compliance to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 250 mA VR 100 V VF at IF=150mA 1.25 V TJ Max. 150 C APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter Package SOD-323 Configuration Single die MECHANICAL DATA Case: SOD-323 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 4.85 0.5mg (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER Marking code on the device SYMBOL BAS316 UNIT A6 Power dissipation PD IF Forward current Non-repetitive peak forward surge Pulse Width = 1 s current Pulse Width = 1 ms IFRM 200 250 4.0 1.0 mW mA A Junction temperature range TJ -65 to +150 C Storage temperature range TSTG -65 to +150 C 1 Version: E1907 BAS316 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN MAX - 0.715 - 0.855 - 1.000 - 1.250 100 0.03 CJ - 1.5 pF trr - 4.0 ns IF = 1.0mA, TJ = 25C Forward voltage per diode IF = 10mA, TJ = 25C (1) IF = 50mA, TJ = 25C VF IF = 150mA, TJ = 25C IR = 100A, TJ = 25C Reverse voltage Reverse current @ rated VR (2) VR = 25V TJ = 25C VR = 75V TJ = 25C f = 1 MHz, VR = 0V Junction capacitance IF = 10mA, IR = 10mA, Reverse recovery time RL = 100 VR IR 1.00 UNIT V V A Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING BAS316 RRG SOD-323 3K / 7" Reel 2 Version: E1907 BAS316 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig.1 Typical Forward Characteristics Fig.2 Reverse Current 100 Reverse Current (uA) Instantaneous Forward Current (A) 10 1 0.1 10 1 0.1 0.01 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 20 40 Instantaneous Forward Voltage (V) 80 100 120 Reverse voltage (V) Fig.3 Admissible Power Dissipation Curve Fig.4 Typical Junction Capacitance 250 1.5 200 1.2 Junction Capacitance (pF) Power Dissipation (mW) 60 150 100 50 0.9 0.6 0.3 0 0 0 25 50 75 100 125 150 Ambient Temperature (oC) 0 175 3 2 4 6 8 10 12 Reverse Voltage (V) 14 16 Version: E1907 BAS316 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-323 SUGGEST PAD LAYOUT 4 Version: E1907 BAS316 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers' products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: E1907