BAS316
Taiwan Semiconductor
1 Version: E1907
250mA, 100V SMD Switching Diode
FEATURES
● Fast switching device (trr<4ns)
● Ideal for automated placement
● Moisture sensitivity level: level 1, per J-STD-020
● Compliance to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS)
● Adapters
● Lighting application
● On-board DC/DC converter
MECHANICAL DATA
● Case: SOD-323
● Molding compound meets UL 94 V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
● Weight: 4.85 ± 0.5mg (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
IF 250 mA
VR 100 V
VF at IF=150mA 1.25 V
TJ Max. 150 °C
Package SOD-323
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
BAS316
UNIT
Marking code on the device A6
Power dissipation PD 200 mW
Forward current IF 250 mA
Non-repetitive peak forward surge
current
Pulse Width = 1 μs IFRM 4.0 A
Pulse Width = 1 ms 1.0
Junction temperature range TJ -65 to +150 °C
Storage temperature range TSTG -65 to +150 °C
BAS316
Taiwan Semiconductor
2 Version: E1907
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN MAX UNIT
Forward voltage per diode (1)
IF = 1.0mA, TJ = 25°C
VF
- 0.715
V
IF = 10mA, TJ = 25°C - 0.855
IF = 50mA, TJ = 25°C - 1.000
IF = 150mA, TJ = 25°C - 1.250
Reverse voltage IR = 100µA, TJ = 25°C VR 100 - V
Reverse current @ rated VR (2)
VR = 25V TJ = 25°C
IR
- 0.03
µA
VR = 75V TJ = 25°C - 1.00
Junction capacitance f = 1 MHz, VR = 0V CJ - 1.5 pF
Reverse recovery time IF = 10mA, IR = 10mA,
RL = 100Ω trr - 4.0 ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
ORDERING CODE PACKAGE PACKING
BAS316 RRG SOD-323 3K / 7" Reel
BAS316
Taiwan Semiconductor
3 Version: E1907
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
Fig.2 Reverse Current
Fig.3 Admissible Power Dissipation Curve
Fig.4 Typical Junction Capacitance
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.01
0.1
1
10
100
0 20 40 60 80 100 120
0
50
100
150
200
250
0 25 50 75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
0 2 4 6 8 10 12 14 16
Reverse Current (uA)
Instantaneous Forward Voltage (V)
Power Dissipation (mW)
Ambient Temperature (
o
C)
Junction Capacitance (pF)
Reverse Voltage (V)
Reverse voltage (V)
Instantaneous Forward Current (A)
BAS316
Taiwan Semiconductor
4 Version: E1907
PACKAGE OUTLINE DIMENSION
SOD-323
SUGGEST PAD LAYOUT
BAS316
Taiwan Semiconductor
5 Version: E1907
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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