AO3493 20V P-Channel MOSFET General Description Features * Low RDS(ON) * RoHS and Halogen-Free Compliant VDS = -20V ID = -3A RDS(ON) < 80m RDS(ON) < 100m RDS(ON) < 130m Applications (VGS = -4.5V) (VGS =- 4.5V)-15 (VGS = -2.5V) (VGS = -1.8V) * Load switch * PWM SOT23 Top View Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current A Pulsed Drain Current TA=70C Junction and Storage Temperature Range Rev.2.0: June 2016 A 1.4 W 0.9 TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A Steady-State Steady-State Maximum Junction-to-Lead C V -15 PD TA=70C 8 -2.4 IDM TA=25C Power Dissipation A Units V -3 ID B Maximum -20 Symbol RJA RJL www.aosmd.com -55 to 150 Typ 70 100 63 C Max 90 125 80 Units C/W C/W C/W Page 1 of 5 AO3493 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions ID=-250A, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -0.4 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 Min -20 VDS=-20V, VGS=0V TJ=55C Static Drain-Source On-Resistance 100 m 130 m -1 V -1.4 A 12 -0.7 DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr A 85 Maximum Body-Diode Continuous Current Gate Source Charge V 70 IS Qgs -1 VGS=-2.5V, ID=-2.6A IS=-1A,VGS=0V Gate resistance nA VGS=-1.8V, ID=-1A Diode Forward Voltage Rg -0.65 100 80 Forward Transconductance Output Capacitance A 115 VSD Reverse Transfer Capacitance -1 56 gFS Coss Units V 80 TJ=125C VDS=-5V, ID=-3A Crss Max -5 VGS=-4.5V, ID=-3A RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-3A 10 m S 500 pF 70 pF 50 pF 20 30 8.5 20 nC 1.2 nC Gate Drain Charge 2.1 nC Turn-On DelayTime 7.2 ns 36 ns 53 ns 56 ns IF=-3A, dI/dt=100A/s 37 Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/s 27 ns nC VGS=-4.5V, VDS=-10V, RL=3.3, RGEN=6 A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300s pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA 12 curve provides a single pulse rating. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: June 2016 www.aosmd.com Page 2 of 5 AO3493 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 VDS=-5V -3.0V -4.5V 20 -2.5V 15 -ID(A) -ID (A) 15 -2.0V 10 -15 10 125C 5 VGS=-1.5V 5 25C 0 0 0 1 2 3 4 5 0 1.5 2 2.5 3 1.6 Normalized On-Resistance 150 130 RDS(ON) (m) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics VGS=-1.8V 110 90 VGS=-2.5V 70 VGS=-4.5V 50 VGS=-2.5V ID=-2.6A 1.4 VGS=-4.5V ID=-3A 1.2 VGS=-1.8V ID=-1A 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 180 1E+02 160 ID=-3A 1E+01 12 140 1E+00 120 -IS (A) RDS(ON) (m) 0.5 125C 100 125C 1E-01 1E-02 25C 80 1E-03 60 25C 1E-04 40 0 2 4 6 8 1E-05 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.2.0: June 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 5 AO3493 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1400 VDS=-10V ID=-3A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 800 Ciss 600 -15 400 1 Coss 200 0 Crss 0 0 2 4 6 8 10 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 1000 RDS(ON) limited TJ(Max)=150C TA=25C 10s 100 100s Power (W) -ID (Amps) 15 -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 10.00 10 1ms 1.00 10ms 0.1s TJ(Max)=150C TA=25C 0.10 1 1s DC 0.01 0.1 1 10 10 100 0.1 0.00001 -VDS (Volts) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125C/W 12 0.1 PDM 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Rev.2.0: June 2016 www.aosmd.com Page 4 of 5 AO3493 G ate C harge Test C ircuit & W aveform V gs Qg -10V - - V DC Qgd + + DUT Qgs V ds VD C V gs Ig C harge Resistive Switching Test Circuit & W aveform s RL Vds t off t on td(on) Vgs - D UT Vgs t d(off) tr 90% Vdd VDC tf + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.2.0: June 2016 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5