AO3493
20V P-Channel MOSFET
-15
Features
VDS = -20V
ID= -3A (VGS = -4.5V)
RDS(ON) < 80mΩ(VGS =- 4.5V)
RDS(ON) < 100mΩ (VGS = -2.5V)
RDS(ON) < 130mΩ (VGS = -1.8V)
General Description
• Low RDS(ON)
• RoHS and Halogen-Free Compliant
Applications
• Load switch
• PWM
SOT23
Top View Bottom View
D
G
S
D
G
D
S
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
Max
t ≤ 10s 70 90
Steady-State 100 125
Steady-State R
θJL
63 80
Thermal Characteristics
1.4
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
VGate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Lead
C
°C/W
Units
Maximum Junction-to-Ambient
A
R
θJA
Parameter
°C/W
Maximum Junction-to-Ambient
A
°C/W
°C-55 to 150
Continuous Drain
Current
A
-3
-2.4
0.9 W
Junction and Storage Temperature Range
T
A
=70°C
MaximumParameter Units
-20
±8
-15
A
P
D
Power Dissipation
A
T
A
=25°C
T
A
=25°C
T
A
=70°C I
D
Pulsed Drain Current
B
S
G
S
Rev.2.0: June 2016 www.aosmd.com Page 1 of 5
AO3493
Symbol Min Typ Max Units
BV
DSS
-20 V
-1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
-0.4 -0.65 -1 V
I
D(ON)
-15 A
56 80
T
J
=125°C 80 115
70 100 mΩ
85 130 mΩ
g
FS
12 S
V
SD
-0.7 -1 V
I
S
-1.4 A
C
iss
500 pF
C
oss
70 pF
C
rss
50 pF
R
g
10 20 30 Ω
Q
g
8.5 20 nC
Q
gs
1.2 nC
Q
gd
2.1 nC
t
D(on)
7.2 ns
t
36
ns
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-3A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
I
DSS
µA
V
DS
=V
GS
I
D
=-250µA
V
DS
=-20V, V
GS
=0V
V
DS
=0V, V
GS
=±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Gate Threshold Voltage
mΩ
V
GS
=-2.5V, I
D
=-2.6A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-3A
V
GS
=-1.8V, I
D
=-1A
Turn-On Rise Time
V
GS
=-4.5V, V
DS
=-10V, R
L
=3.3
Ω
,
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3A
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-10V, f=1MHz
Gate Drain Charge
Rev.2.0: June 2016 www.aosmd.com Page 2 of 5
t
36
ns
t
D(off)
53 ns
t
f
56 ns
t
rr
37 ns
Q
rr
27 nC
12
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-3A, dI/dt=100A/µs
I
F
=-3A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-10V, R
L
=3.3
Ω
,
R
GEN
=6Ω
Turn-Off Fall Time
A: The value of R θJA is measured with the device mounted on 1 in 2FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev.2.0: June 2016 www.aosmd.com Page 2 of 5
AO3493
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-15
0
5
10
15
20
25
012345
-ID(A)
-VDS (Volts)
Figure 1: On-Region Characteristics
VGS=-1.5V
-2.0V
-
2.5V
-4.5V
-
3.0V
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
VDS=-5V
50
70
90
110
130
150
0
2
4
6
8
10
RDS(ON) (mΩ)
VGS=-1.8V
V
GS
=-2.5V
V
GS
=-4.5V
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Normalized On-Resistance
VGS=-2.5V
ID=-2.6A
VGS=-4.5V
ID=-3A
VGS=-1.8V
ID=-1A
Rev.2.0: June 2016 www.aosmd.com Page 3 of 5
12
50
0 2 4 6 8 10
-ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=
-
4.5V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125
°
C
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
60
80
100
120
140
160
180
02468
RDS(ON) (mΩ)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
ID=-3A
25°C
125°C
Rev.2.0: June 2016 www.aosmd.com Page 3 of 5
AO3493
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-15
0
1
2
3
4
5
0246810
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
0 5 10 15 20
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
0.1
1
10
100
1000
0.00001 0.001 0.1 10 1000
Power (W)
VDS=-10V
I
D
=-3A
TJ(Max)=150°C
TA=25°C
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
-ID(Amps)
10
µ
s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
1s
Rev.2.0: June 2016 www.aosmd.com Page 4 of 5
12
0.1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
0.1 1 10 100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Rev.2.0: June 2016 www.aosmd.com Page 4 of 5
AO3493
V D C
Ig
Vds
DUT
VD C
Vgs
Vgs
Qg
Qgs Qgd
Charg e
G ate C harge Test C ircuit & W aveform
-
+
-
+
-10V
DUT
Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
rr
Q = - Idt
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Sw itching Test Circuit & W aveform s
-
+
Vgs
Vds
tt
t
tt
t
90%
10%
r
on
d(o ff)
f
off
d(on )
Rev.2.0: June 2016 www.aosmd.com Page 5 of 5
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
Rev.2.0: June 2016 www.aosmd.com Page 5 of 5