5SDF 11H4505
TS - DC/249/07d Feb-12 1 of 12
5SDF 11H4505
Old part no. DC 889-1100-45
Fast Recovery Diode
Properties
Key Parameters
Optimized soft recovery characteristics
VRRM
=
4 500
V
Enhanced Safe Operating Area
IFAVm
=
1 340
A
Industry standard housing
IFSM
=
23 000
A
Cosmic radiation withstand rating
VTO
=
2.429
V
Applications
rT
=
0.645
m
suited for IGCT or GTO applications
Snubber and clamp diode
Freewheeling diode
Types
VRRM
5SDF 11H4505
4 500 V
Conditions:
Tj = -40 ÷ 140 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
Fm
Mounting force
40 ± 5
kN
m
Weight
0.9
kg
DS
Surface creepage
distance
40
mm
Da
Air strike distance
20
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5SDF 11H4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DC/249/07d Feb-12 2 of 12
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse voltage
Tj = -40 ÷ 140 °C
4 500
V
VDC link
Permanent DC voltage for 100 FIT failure rate
Ambient cosmic radiation at sea level in open air
2 800
V
IFAVm
Average forward current
Tc = 85 °C
1 340
A
IFRMS
RMS forward current
Tc = 85 °C
2 105
A
IRRM
Repetitive reverse current
VR = VRRM
100
mA
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 8.3 ms
24 600
A
tp = 10 ms
23 000
A
I2t
Limiting load integral
VR = 0 V, half sine pulse
tp = 8.3 ms
2 505 000
A2s
tp = 10 ms
2 645 000
A2s
PrrM
Reverse recovery maximum power
8.0
MW
Tjmin -Tjmax
Operating temperature range
-40 ÷ 140
°C
TSTG
Storage temperature range
-40 ÷ 140
°C
Unless otherwise specified Tj = 140 °C
5SDF 11H4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DC/249/07d Feb-12 3 of 12
Forward characteristics
Value
Unit
min
typ
max
VT0
Threshold voltage
2.429
V
rT
Forward slope resistance
IF1 = 2 042 A, IF2 = 6 126 A
0.645
m
VFM
Maximum forward voltage
IFM = 2 000 A
3.710
V
Unless otherwise specified Tj = 140 °C
Forward recovery characteristics
Value
Unit
min
typ
max
Vfr
Forward recovery voltage
diF/dt = 650 A/µs
diF/dt = 1 000 A/µs
75
103
V
Unless otherwise specified Tj = 140 °C
Reverse recovery characteristics
Value
Unit
min
typ
max
PrrM
Reverse recovery maximum
power
IFM = 2 500 A, VR = 2 800 V
clamp circuit:
LCL
0.35 µH, CCL = 10 µF
diF/dt = -1 000 A/µs
diF/dt = -650 A/µs
5.5
4.7
MW
Qrr
Recovered charge
the same conditions as at PrrM
diF/dt = -1 000 A/µs
diF/dt = -650 A/µs
3 500
2 690
µC
IrrM
Reverse recovery maximum
current
the same conditions as at PrrM
diF/dt = -1 000 A/µs
diF/dt = -650 A/µs
1 500
1 170
A
Wrr
Reverse recovery energy
the same conditions as at PrrM
diF/dt = -1 000 A/µs
diF/dt = -650 A/µs
7.0
5.8
J
Qrr3
Recovered charge
IFM = 2 000 A, diF/dt = -80 A/µs, VR = 100 V
550
600
µC
IrrM3
Reverse recovery maximum current
the same conditions as at Qrr3
150
180
A
trr3
Reverse recovery time
the same conditions as at Qrr3
5.0
µs
Unless otherwise specified Tj = 140 °C
5SDF 11H4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DC/249/07d Feb-12 4 of 12
Thermal Parameters
Value
Unit
Rthjc
Thermal resistance
junction to case
double side cooling
8.0
K/kW
anode side cooling
14.5
cathode side cooling
18.0
Rthch
Thermal resistance
case to heatsink
double side cooling
2.5
K/kW
single side cooling
5.0
Transient Thermal Impedance
Analytical function for transient
thermal impedance
4
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 45 ± 5 kN, Double side cooled
Correction for periodic waveforms
180°
sine:
1.0
K/kW
120°
sine:
1.5
K/kW
60°
sine:
2.5
K/kW
180°
rectangular:
0.9
K/kW
120°
rectangular:
1.5
K/kW
60°
rectangular:
2.5
K/kW
i
1
2
3
4
i ( s )
0.4406
0.1045
0.0092
0.0022
Ri( K/kW )
4.533
2.255
0.868
0.345
0
1
2
3
4
5
6
7
8
9
0.001 0.01 0.1 1 10
Transient thermal impedance junction
to case Zthjc ( K/kW )
Square wave pulse duration td( s )
Fig. 2
Dependence transient thermal impedance
junction to case on square pulse
5SDF 11H4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DC/249/07d Feb-12 5 of 12
Forward Characteristics
0
1000
2000
3000
4000
5000
6000
0 2 4 6 8
IF( A )
VF( V )
Tj= 140 C
Fig. 3
Maximum forward voltage drop
characteristics
5SDF 11H4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DC/249/07d Feb-12 6 of 12
Surge Characteristics
0
1
2
3
4
5
0
10
20
30
40
50
110 100
i2dt (106A2s)
IFSM ( kA )
t ( ms )
IFSM
i2dt
0
5
10
15
20
25
110 100
IFSM ( kA )
Number n of cycles at 50 Hz
VR= 0 V
VR0.5 VRRM
Fig. 4
Surge forward current vs. pulse length,
half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
Fig. 5
Surge forward current vs. number
of pulses, half sine wave, Tj = Tjmax
5SDF 11H4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DC/249/07d Feb-12 7 of 12
Power Loss and Maximum Case Temperature Characteristics
0
1000
2000
3000
4000
5000
6000
0400 800 1200 1600
PT( W )
IFAV ( A )
120 180
DC
y
= 60
0
1000
2000
3000
4000
5000
6000
0400 800 1200 1600
PT( W )
IFAV ( A )
y
= 30 60
90
120 180
270
DC
Fig. 6
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 7
Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T = 1/f
70
80
90
100
110
120
130
140
0400 800 1200 1600
TC( °C )
IFAV ( A )
180 120
DC
y
= 60
70
80
90
100
110
120
130
140
0400 800 1200 1600
TC( °C )
IFAV ( A )
180
DC
270
120 90 60
y
= 30
Fig. 8
Max. case temperature vs. aver. forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 9
Max. case temperature vs. aver. forward
current, square waveform, f = 50 Hz, T = 1/f
Note 2: Figures number 6
9 have been calculated without considering any forward and reverse recovery
losses. They are valid for f = 50 or 60 Hz operation.
5SDF 11H4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DC/249/07d Feb-12 8 of 12
Forward Recovery Characteristics
0
2000
10 30
t
vF (t), iF (t)
0
100
Vfr
di F/dt
tfr
v F (t)
i F (t)
0
50
100
150
0 200 400 600 800 1000
Vfr ( V )
diF/dt ( A/µs )
Fig. 10
Typical forward recovery voltage waveform
when the diode is turned on with high diF/dt
Fig. 11
Max. forward recovery voltage
vs. rate of rise of forward current,
trapezoid pulse, Tj = Tjmax, tfr
10 µs
5SDF 11H4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DC/249/07d Feb-12 9 of 12
Reverse Recovery Characteristics
-1000
5
t
vF (t), iF (t)
-1000
VrrM
- di F/dt
trr
v F (t)
i F (t)
IrrM
VR
0.25 I rrM
0.9 I rrM
Qrr
IFM
ts
tf
0
1000
2000
3000
4000
5000
6000
0 2000 4000 6000
Qrr ( µC )
IFM ( A )
-diF/dt = 1000 A/µs
650 A/µs
Fig. 12
Typical waveforms and definition of symbols
at reverse recovery of a diode,
inductive switching
Fig. 13
Max. recovered charge vs. forward
current,trapezoid pulse, Tj = Tjmax
0
1000
2000
3000
4000
5000
6000
0 200 400 600 800 1000
Qrr ( µC )
-diT/dt ( A/µs )
IFM = 2500 A
1000 A
0
200
400
600
800
1000
1200
1400
1600
0 200 400 600 800 1000
IrrM ( A )
-diT/dt ( A/µs )
IFM = 2500 A
1000 A
Fig. 14
Max. recovered charge vs. rate of fall
of forward current, trapezoid pulse, Tj = Tjmax
Fig. 15
Max. reverse recovery current
vs. rate of fall of forward current,
trapezoid pulse, Tj = Tjmax
5SDF 11H4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DC/249/07d Feb-12 10 of 12
Reverse Recovery Characteristics
0
2
4
6
8
0 200 400 600 800 1000
Wrr ( J )
-diF/dt ( A/µs )
1000 A
IFM = 2500 A
0
2
4
6
8
0 500 1000 1500 2000 2500
Wrr ( J )
IFM ( A )
650 A/µs
diF/dt = 1000 A/µs
Fig. 16
Maximum reverse recovery energy per pulse
vs. rate of fall of forward current,
IFM = 1 000, 2 500 A, Tj = Tjmax
Fig. 17
Maximum reverse recovery energy
per pulse vs. forward current,
-diF /dt = 650, 1000 A/µs, Tj = Tjmax
Safe Operating Area
0
1000
2000
3000
4000
5000
6000
0 1000 2000 3000 4000
IFM ( A )
VR( V )
Fig. 18
Diode Safe Operating Area,
Tj = Tjmax, diF/dt = - 1000 A/
µs
5SDF 11H4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DC/249/07d Feb-12 11 of 12
Frequency Ratings
0
500
1000
1500
2000
10 100 1000
IFAV ( A )
f( Hz )
180
270
120
90
60
y
= 30
0
2000
4000
6000
8000
10000
10 100 1000
IFM ( A )
f( Hz )
180
270
120
90
60
y
= 30
Fig. 19
Average on-state current vs. frequency,
trapezoid waveform, TC = 70 °C,
diF/dt =
1 000 A/µs, VR = 2 800 V
Fig. 20
Maximum on-state current vs. frequency,
trapezoid waveform, TC = 70 °C,
diF/dt =
1 000 A/µs, VR = 2 800 V
0
500
1000
1500
2000
10 100 1000
IFAV ( A )
f( Hz )
180
270
120
90
60
y
= 30
0
2000
4000
6000
8000
10000
10 100 1000
IFM ( A )
f( Hz )
180
270
120
90
60
y
= 30
Fig. 21
Average on-state current vs. frequency,
trapezoid waveform, TC = 85 °C,
diF/dt =
1 000 A/µs, VR = 2 800 V
Fig. 22
Maximum on-state current vs. frequency,
trapezoid waveform, TC = 85 °C,
diF/dt =
1 000 A/µs, VR = 2 800 V
5SDF 11H4505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DC/249/07d Feb-12 12 of 12
Notes:
