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FGA20S140P 1400 V, 20 A Shorted-anode IGBT Features General Description * High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild's shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven. * Low Saturation Voltage: VCE(sat) =1.9 V @ IC = 20 A * High Input Impedance * RoHS Compliant Applications * Induction Heating, Microwave Oven C G TO-3PN E G C E Absolute Maximum Ratings T C Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC = 25C unless otherwise noted Ratings Unit 1400 V 25 V Collector Current @ TC = 25oC 40 A Collector Current o 20 A 60 A @ TC = 100 C ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current @ TC = 25oC 40 A IF Diode Continuous Forward Current @ TC = 100oC 20 A 272 W PD o Maximum Power Dissipation @ TC = 25 C Maximum Power Dissipation o @ TC = 100 C 136 Operating Junction Temperature TJ Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds W -55 to +175 o C -55 to +175 o C 300 o C Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. Max. -- 0.55 o C/W 40 o C/W -- Unit Notes: 1: Limited by Tjmax (c)2012 Fairchild Semiconductor Corporation FGA20S140P Rev. C4 1 www.fairchildsemi.com FGA20S140P -- 1400 V, 20 A Shorted-anode IGBT September 2013 Device Marking Device Package Reel Size Tape Width Quantity FGA20S140P FGA20S140P TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics ICES Collector Cut-Off Current VCE = 1400, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - 500 nA IC = 20mA, VCE = VGE 4.5 6.0 7.5 V IC = 20A, VGE = 15V TC = 25oC - 1.9 2.4 V IC = 20A, VGE = 15V, TC = 125oC - 2.1 - V IC = 20A, VGE = 15V, TC = 175oC - 2.2 - V IF = 20A, TC = 25oC On Characteristics VGE(th) VCE(sat) VFM G-E Threshold Voltage Collector to Emitter Saturation Voltage Diode Forward Voltage - 1.7 2.4 V 175oC - 2.1 - V - 1686 - pF VCE = 30V, VGE = 0V, f = 1MHz - 45 - pF - 32 - pF - 20 IF = 20A, TC = Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characcteristics td(on) Turn-On Delay Time tr Rise Time - 245 - ns td(off) Turn-Off Delay Time - 400 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.56 - mJ Ets Total Switching Loss - 1.32 - mJ VCC = 600V, IC = 20A, RG = 10, VGE = 15V, Resistive Load, TC = 25oC ns - 130 - ns - 0.76 - mJ td(on) Turn-On Delay Time - 21 - ns tr Rise Time - 301 - ns td(off) Turn-Off Delay Time - 420 - ns tf Fall Time - 356 - ns Eon Turn-On Switching Loss - 0.95 - mJ Eoff Turn-Off Switching Loss - 1.39 - mJ Ets Total Switching Loss - 2.34 - mJ Qg Total Gate Charge - 203.5 - nC - 10.8 - nC - 84.6 - nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge (c)2012 Fairchild Semiconductor Corporation FGA20S140P Rev. C4 VCC = 600V, IC = 20A, RG = 10, VGE = 15V, Resistive Load, TC = 175oC VCE = 600V, IC = 20A, VGE = 15V 2 www.fairchildsemi.com FGA20S140P -- 1400 V, 20 A Shorted-anode IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics 160 160 20V o TC = 25 C Collector Current, IC [A] 12V 100 80 60 10V 40 9V 20 1.5 3.0 4.5 6.0 Collector-Emitter Voltage, VCE [V] 60 10V 40 9V 8V 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Collector-Emitter Voltage, VCE [V] 8.0 Figure 4. Transfer Characteristics 100 Common Emitter VCE = 20V Common Emitter VGE = 15V o Collector Current, IC [A] Collector Current, IC [A] 12V 80 7.5 120 TC = 25 C o 80 100 20 Figure 3. Typical Saturation Voltage Characteritics 100 15V 120 8V 0 0.0 17V VGE = 20V 140 VGE = 17V 120 o TC = 175 C 15V 140 Collector Current, IC [A] Figure 2. Typical Saturation Voltage Characteristics TC = 175 C 60 40 o 80 TC = 25 C o TC = 175 C 60 40 20 20 0 0.0 0 1.0 2.0 3.0 4.0 Collector-Emitter Voltage, VCE [V] 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Gate-Emitter Voltage,VGE [V] 5.0 Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. Vge 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 3.5 40A 3.0 2.5 20A 2.0 IC = 10A 1.5 1.0 25 50 75 100 125 150 o Case Temperature, TC [ C] (c)2012 Fairchild Semiconductor Corporation FGA20S140P Rev. C4 o TC = 25 C 15 10 3 IC = 10A 5 0 175 Common Emitter 4 20A 40A 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA20S140P -- 1400 V, 20 A Shorted-anode IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance Characteristics 10000 20 Common Emitter Cies 1000 Capacitance [pF] Collector-Emitter Voltage, VCE [V] o TC = 175 C 16 12 8 20A IC = 10A 4 100 Coes Cres 10 40A Common Emitter VGE = 0V, f = 1MHz o TC = 25 C 1 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 20 Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics 100 15 Common Emitter 10s 400V o TC = 25 C 600V 12 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 30 VCC = 200V 9 6 3 10 100s 1ms 1 10ms DC *Notes: 0.1 o 1. TC = 25 C o 0.01 1 0 0 30 60 90 120 150 Gate Charge, Qg [nC] 180 210 Figure 11. Turn-On Characteristics vs Gate Resistance 2. TJ = 175 C 3. Single Pulse 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] Figure 12. Turn-off Characteristics vs. Gate Resistance 10000 200 Common Emitter VCC = 600V, VGE = 15V IC = 20A tr Switching Time [ns] Switching Time [ns] o 100 td(on) Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 C o TC = 175 C td(off) 1000 tf o 10 TC = 25 C o TC = 175 C 5 10 20 30 40 50 60 Gate Resistance, RG [] (c)2012 Fairchild Semiconductor Corporation FGA20S140P Rev. C4 100 70 4 0 10 20 30 40 50 Gate Resistance, RG [] 60 70 www.fairchildsemi.com FGA20S140P -- 1400 V, 20 A Shorted-anode IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics VS. Collector Current Figure 14.Turn-off Characteristics VS. Collector Current Common Emitter VGE = 15V, RG = 10 o o TC = 25 C TC = 25 C o o tr TC = 175 C TC = 175 C Switching Time [ns] 1000 Switching Time [ns] Common Emitter VGE = 15V, RG = 10 1000 100 td(on) td(off) tf 10 100 10 20 30 40 10 20 30 Collector Current, IC [A] Collector Current, IC [A] Figure 15. Switching Loss VS. Gate Resistance Figure 16. Switching Loss VS. Gate Resistance 30 10 Common Emitter VCC = 600V, VGE = 15V 10k IC = 20A o Switching Loss [uJ] Switching Loss [mJ] TC = 25 C Eon o TC = 175 C 1 20 30 40 50 Gate Resistance, RG [] 60 o o TC = 175 C Eoff 1k Eon 100 10 70 Figure 17. Turn off Switching SOA Characteristics 20 30 Collector Current, IC [A] 40 Figure 18. Forward Characteristics 100 80 Forward Current, IF [A] Collector Current, IC [A] Common Emitter VGE = 15V, RG = 10 TC = 25 C Eoff 0.1 0.1 10 40 10 Safe Operating Area VGE = 15V, TC = 175 C o TC = 25 C o 0.5 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] FGA20S140P Rev. C4 o TJ = 175 C TC = 175 C 1 (c)2012 Fairchild Semiconductor Corporation 10 1 o 1 o TJ = 25 C 0 5 1 Forward Voltage, VF [V] 2 www.fairchildsemi.com FGA20S140P -- 1400 V, 20 A Shorted-anode IGBT Typical Performance Characteristics FGA20S140P -- 1400 V, 20 A Shorted-anode IGBT Figure 19. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] (c)2012 Fairchild Semiconductor Corporation FGA20S140P Rev. C4 6 www.fairchildsemi.com FGA20S140P -- 1400 V, 20 A Shorted-anode IGBT Mechanical Dimensions Figure 20. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003 Dimensions in Millimeters (c)2012 Fairchild Semiconductor Corporation FGA20S140P Rev. C4 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2012 Fairchild Semiconductor Corporation FGA20S140P Rev. C4 8 www.fairchildsemi.com FGA20S140P -- 1400 V, 20 A Shorted-anode IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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