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©2012 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGA20S140P Rev. C4
September 2013
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Notes:
1: Limited by Tjmax
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 1400 V
VGES Gate to Emitter Voltage ±25 V
ICCollector Current @ TC = 25oC40 A
Collector Current @ TC = 100oC20 A
ICM (1) Pulsed Collector Current 60 A
IFDiode Continuous Forward Current @ TC = 25oC 40 A
IFDiode Continuous Forward Current @ TC = 100oC 20 A
PDMaximum Power Dissipation @ TC = 25oC272 W
Maximum Power Dissipation @ TC = 100oC136 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Unit
RθJC(IGBT) Thermal Resistance, Junction to Case -- 0.55 oC/W
RθJA Thermal Resistance, Junction to Ambient -- 40 oC/W
GCE
TO-3PN
G
C
E
FGA20S140P
1400 V, 20 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: VCE(sat) =1.9 V @ IC = 20 A
• High Input Impedance
•RoHS Compliant
Applications
• Induction Heating, Microwave Oven
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGA20S140P Rev. C4
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FGA20S140P FGA20S140P TO-3PN - - 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
ICES Collector Cut-Off Current VCE = 1400, VGE = 0V - - 1 mA
IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±500 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 20mA, VCE = VGE 4.5 6.0 7.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 20A, VGE = 15V
TC = 25oC-1.92.4V
IC = 20A, VGE = 15V,
TC = 125oC-2.1- V
IC = 20A, VGE = 15V,
TC = 175oC-2.2-V
VFM Diode Forward Voltage IF = 20A, TC = 25oC-1.72.4
V
IF = 20A, TC = 175oC-2.1-
V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
- 1686 - pF
Coes Output Capacitance - 45 - pF
Cres Reverse Transfer Capacitance - 32 - pF
Switching Characcteristics
td(on) Turn-On Delay Time
VCC = 600V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25oC
-20 ns
trRise Time - 245 - ns
td(off) Turn-Off Delay Time - 400 - ns
tfFall Time - 130 - ns
Eon Turn-On Switching Loss - 0.76 - mJ
Eoff Turn-Off Switching Loss - 0.56 - mJ
Ets Total Switching Loss - 1.32 - mJ
td(on) Turn-On Delay Time
VCC = 600V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 175oC
-21-ns
trRise Time - 301 - ns
td(off) Turn-Off Delay Time - 420 - ns
tfFall Time - 356 - ns
Eon Turn-On Switching Loss - 0.95 - mJ
Eoff Turn-Off Switching Loss - 1.39 - mJ
Ets Total Switching Loss - 2.34 - mJ
QgTotal Gate Charge VCE = 600V, IC = 20A,
VGE = 15V
- 203.5 - nC
Qge Gate to Emitter Charge - 10.8 - nC
Qgc Gate to Collector Charge - 84.6 - nC
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGA20S140P Rev. C4
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteritics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltag e vs . Vg e
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
0
20
40
60
80
100
120
140
160
9V
8V
17V
TC = 175oC
15V
12V
10V
VGE = 20V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V ]
0.0 1.5 3.0 4.5 6.0 7.5
0
20
40
60
80
100
120
140
160
8V
VGE = 17V
10V
9V
20V
TC = 25oC
15V
12V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
01234567891011121314
0
20
40
60
80
100 Common Emitter
VCE = 20V
TC = 25oC
TC = 175oC
Coll ector Cur rent, IC [A]
Gate-Emitter Voltage,VGE [V]
0.0 1.0 2.0 3.0 4.0 5.0
0
20
40
60
80
100
120
Comm on Em itter
VGE = 15V
TC = 25oC
TC = 175oC
Collect or Current, IC [A]
Collector-Emitter Voltage, V
CE
[V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
40A
20A
IC = 10A
Comm on Em itter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC [oC]
4 8 12 16 20
0
5
10
15
20
IC = 10A 20A 40A
Comm on Em itter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate -E mitter Voltag e, V GE [V]
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGA20S140P Rev. C4
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance Characteristics
Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics
Figure 11. Turn-On Characteristics vs Figure 12. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
4 8 12 16 20
0
4
8
12
16
20
IC = 10A
20A
40A
Comm on E m itter
TC = 175oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
5 1015202530
1
10
100
1000
10000
Com m on Em itter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V ]
0 30 60 90 120 150 180 210
0
3
6
9
12
15 Com m on Em itter
TC = 25oC600V
400V
VCC = 200V
Gate-Emitter Voltage, VGE [V]
G a te C harg e , Qg [nC]
1 10 100 1000
0.01
0.1
1
10
100
2000
1ms
10ms
DC
*Notes:
1. T C = 25oC
2. T J = 175oC
3. Single Pulse
10μs
100μs
Collector Current, Ic [A]
C o llec t o r-E mitter V o lta g e , V CE [V]
10 20 30 40 50 60 70
10
100
200
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 175oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [Ω]
5
0 10203040506070
100
1000
10000 Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 175oC td(off)
tf
Switching Time [ns]
Gate Resistance, RG [Ω]
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGA20S140P Rev. C4
Typical Performance Characteristics
Figure 13. Turn-on Charac teristics VS. Figure 14.Turn-off Characteristics VS.
Collector Current Collector Current
Figure 15. Switching Loss VS. Gate Resistance Figure 16. Switching Loss VS. Gate Resistance
Figure 17. Turn off Switching Figure 18. Forward Characteristics
SOA Characteristics
10 20 30 40
10
100
1000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC tr
td(on)
Switchin g Time [ns]
Collector C u rren t, IC [A]
10 20 30 40
100
1000
Common Emitter
VGE = 15V, R G = 10Ω
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Collector Current, IC [A]
10 20 30 40 50 60 70
0.1
1
10 Common Em itter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 175oC Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG [Ω]
0.1
10 20 30 40
100
1k
10k
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC
Eon
Eoff
Switching Loss [uJ]
Collector Current, IC [A]
30
012
1
10
80
TJ = 25oC
TC = 25oC
TC = 175oC
TJ = 175oC
Forward Voltage, VF [V]
Forward Current, IF [A]
0.5
1 10 100 1000
1
10
100
2000
Safe Operating A rea
VGE = 15V, TC = 175oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGA20S140P Rev. C4
Figure 19. Transient Thermal Impedance of IGBT
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-3
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
R ectangular Pu lse Du ration [sec]
D uty F a c tor, D = t1 /t 2
Peak Tj = Pdm x Zthjc + TC
0.5
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FGA20S140P Rev. C4
Mechanical Dimensions
Figure 20. TO -3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
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Dimensions in Millimeters
FGA20S140P — 1400 V, 20 A Shorted-anode IGBT
©2012 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FGA20S140P Rev. C4
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