2N7640-GA - GeneSiC Semiconductor

2N7640-GA

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Normally – OFF Silicon Carbide

Junction Transistor

Features

Package

• 210°C maximum operating temperature

• Gate Oxide Free SiC Switch

• Exceptional Safe Operating Area

• Excellent Gain Linearity

• Compatible with 5 V TTL Gate Drive

• Temperature Independent Switching Performance

• Low Output Capacitance

• Positive Temperature Coefficient of RDS,ON

• Suitable for Connecting an Anti-parallel Diode

• RoHS Compliant

SMD0.5 / TO – 276 (Hermetic Package)

Advantages

Applications

•

Compatible with Si MOSFET/IGBT Gate Drive ICs

• > 20 µs Short-Circuit Withstand Capability

• Lowest-in-class Conduction Losses

• High Circuit Efficiency

• Minimal Input Signal Distortion

• High Amplifier Bandwidth

•

Down Hole Oil Drilling

• Geothermal Instrumentation

• Solenoid Actuators

• General Purpose High-Temperature Switching

• Amplifiers

• Solar Inverters

• Switched-Mode Power Supply (SMPS)

•

Power Factor Correction (PFC)

Table of Contents

Section I: Absolute Maximum Ratings .......................................................................................................... 1

Section II: Static Electrical Characteristics ................................................................................................... 2

Section III: D ynamic Electrical Characteristics ............................................................................................ 2

Section IV: Figures .......................................................................................................................................... 3

Section V: Driving the 2N7640-GA ................................................................................................................. 6

Section VI: Packag e Di mensions: .................................................................................................................. 9

Section VII: SPICE Model Parameters ......................................................................................................... 10

Section I: Absolute Maximum Ratings

Parameter Symbol Conditions Values Unit

Drain – Source Voltage V

DS

VGS = 0 V 600 V

Continuous Drain Current

I

D

TJ = 210°C, TC = 25°C

32

A

Continuous Gate Current

IGM

2

A

Turn-Off Safe Operating Area RBSOA TVJ = 210°C, I G = 1.5 A,

Clamped Inductive Load

I

D,max

= 16

@ VDS ≤ VDSmax

A

Short Circuit Safe Operating Area SCSOA

T

VJ

= 210°C, I

G

= 1.5 A, V

DS

= 400 V,

Non Repetitive

>20 µs

Reverse Gate – Source Voltage

VGS

30

V

Reverse Drain – Source Voltage

V

DS

40

V

Power Dissipation Ptot TJ = 210°C, TC = 25°C 330 W

Operating and Storage Temperature

T

j

, T

stg

-55 to 210

°C

S

G

D

S

G

VDS = 600 V

RDS(ON) = 60 mΩ

ID (Tc = 25°C) = 32 A

hFE (Tc = 25°C) = 80

2N7640-GA

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Section II: Static Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

A: On State

Drain – Source On Resistance RDS(ON) ID = 20 A, Tj = 2 5 ° C

ID = 20 A, Tj = 125 °C

ID = 20 A, Tj = 175 °C

ID = 20 A, Tj = 210 °C

60

96

128

155

mΩ

Gate – Source Saturation Voltage VGS,SAT ID = 20 A, ID/IG = 40, Tj = 25 °C

ID = 20 A, ID/IG = 30, Tj = 175 °C

3.44

3.24 V

DC Current Gain hFE VDS = 5 V, ID = 20 A, Tj = 25 °C

VDS = 5 V, ID = 20 A, Tj = 125 °C

VDS = 5 V, ID = 20 A, Tj = 175 °C

VDS = 5 V, ID = 20 A, Tj = 210 °C

80

50

43

35

B: Off State

Drain Leakage Current IDSS VR = 600 V, VGS = 0 V , Tj = 25 °C

3

100

µA

VR = 600 V, VGS = 0 V, Tj = 175 °C

10

400

V

R

= 600 V, V

GS

= 0 V, T

j

= 210 °C

50

600

C: Thermal

Thermal resistance, junction - case

RthJC

0.6

°C/W

Section III: Dynamic Electrical Characteristics

A: Capacitance and Gate Charge

Input Capacitance

Ciss

VGS = 0 V, VD = 100 V, f = 1 MHz

2500

pF

Reverse Transfer/Output Capacitance

Crss/Coss

VD = 100 V, f = 1 MHz

158

pF

Output Capacitance Stored Energy

EOSS

V

GS

= 0 V, V

D

= 100 V,

f

= 1 MHz

0.8

µJ

Effective Output Capacitance,

time related

Coss,tr ID = constant, VGS = 0 V, VDS =

0…100 V 260 pF

Effective Output Capacitance,

energy related Coss,er VGS = 0 V, VDS = 0…100 V 202 pF

Gate-Source Charge

Q

GS

VGS = -5…3 V

27

nC

Gate-Drain Charge

QGD

VGS = 0 V, VDS = 0…100 V

26

nC

Gate Charge - Total

QG

53

nC

B: Switching1

1 – All times are relative to the Drain-Source Voltage VDS

Parameter Symbol Conditions

Values

Unit

min. typ. max.

Internal Gate Resistance – zero bias RG(INT-ZERO)

f = 1 MHz, V

AC

= 50 mV, V

DS

= V

GS

= 0 V ,

T

j

= 210 ºC 2.6 Ω

Internal Gate Resistance – ON

R

G(INT-ON)

VGS > 2.5 V, VDS = 0 V, Tj = 225 ºC

0.16

Ω

Turn On Delay Time

td(on)

Tj = 25 ºC, VDS = 400 V,

ID = 20 A, Inductive Load

Refer to Section V: for additional

driving information

90

ns

Fall Time, VDS

tf

80

ns

Fig. 11, 13

Turn Off Delay Time

td(off)

50

ns

Rise Time, VDS

tr

55

ns

Fig. 12, 14

Turn On Delay Time

td(on)

Tj = 210 ºC, VDS = 400 V,

ID = 20 A, Inductive Load

Refer to Section V: for additional

driving information

90

ns

Fall Time, VDS tf

85

ns Fig. 11

Turn Off Delay Time

t

d(off)

50

ns

Rise Time, VDS

tr

50

ns

Fig. 12

Turn-On Energy Per Pulse

Eon

Tj = 25 ºC, VDS = 400 V,

ID = 20 A, Inductive Load

810

µJ

Fig. 11, 13

Turn-Off Energy Per Pulse

Eoff

95

µJ

Fig. 12, 14

Total Switching Energy

Etot

905

µJ

Turn-On Energy Per Pulse

Eon

Tj = 210 ºC, VDS = 400 V,

ID = 20 A, Inductive Load

140

µJ

Fig. 11

Turn-Off Energy Per Pulse

E

off

45

µJ

Fig. 12

Total Switching Energy

E

tot

185

µJ

2N7640-GA

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Section IV: Figures

A: Static Characteristics

Figure 1: Typical Output Characteristics at 25 °C Figure 2: Typical Output Characteristics at 125 °C

Figure 3: Typical Output Characteristics at 210 °C Figure 4: Drain-Source Voltage vs. Gate Current

Figure 5: DC Current Gain and Normalized On-Resistance

vs. Tempera tur e

Figure 6: Typical Gate – Source Saturation Voltage

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Figure 7: Typical Blocking Characteristics

Figure 8: Forward Bias Safe Operating Area at Tc=120

o

C

B: Dynamic Characteristics

Figure 9: Capacitance Characteristics

Figure 10: Output Capacitance Stored Energy

Figure 11: Typical Turn On Energy Losses and Switching

Times vs. Temperature

Figure 12: Typical Turn Off Energy Losses and Switching

Times vs. Temperature

2N7640-GA

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Figure 13: Typical Turn On Energy Losses and Switching

Times vs. Drain Current

Figure 14: Typical Turn Off Energy Losses and Switching

Times vs. Drain Current

Figure 15: Power Derating Curve

Figure 16: Typical Hard Switched Device Power Loss vs.

Switching Fr eq uen cy

2

Figure 17: Turn-Off Safe Operating Area

2 – Representative values based on device switching energy loss. Actual losses will depend on gate drive conditions, device load, and circuit topology

2N7640-GA

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Section V: Driving the 2N7640-GA

The 2N7640-GA is a current controlled SiC transistor which requires a positive gate current for turn-on and to remain in on-state. It may be

driven by different drive topologies depending on the intended application.

Table 1: Estimated Power Consumption and switching frequencies for various Gate Drive topologies.

Drive Topology Gate Drive Power

Consumption Switching

Frequency

Simple TTL

High

Low

Constant Current

Medium

High Speed – Boost Capacitor

Medium

High

High Speed – Boost Inductor Low High

Proportional

Lowest

Medium

Pulsed Power

Medium

N/A

A: Simple TTL Drive

The 2N7640-GA may be driv en by 5 V TTL l ogic by using a simple current amplific ation stage. The c urrent amplifier o utput current mu st meet

or exceed the steady state gate current, IG,steady, required to operate the 2N7640-GA. An external gate resistor RG, shown in the

Figure 18 topology, sets IG,steady to the required level which is dependent on the SJT drain current ID and DC current gain hFE, RG may be

calculated from the equation below. The v alue of VEC,sat c an be taken from the PNP datasheet, a partial list of high-temperatu re PNP and NPN

transistors options is given below. High-temperature MOSFETs may also be used in the topology.

, =5.0   , () , ()  (,)

1.5

Figure 18: Simple TTL Gate Drive Topology

Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving

BJT Part Number Type Tj,max (°C)

PHPT60603PY

PNP

175

PHPT60603NY NPN 175

2N2222

NPN

200

2N6730

PNP

200

2N2905

PNP

200

2N5883

PNP

200

2N5885

NPN

200

SiC SJT

D

S

G

TTL

Gate Signal

0 / 5 V

TTL i/p

inverted

I

G,steady

5 V

PNP

NPN

Inverting

Current

Boost

Stage

0 / 5 V

TTL o/p R

G

2N7640-GA

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B: High Speed Driving

For ultra high speed 2N7640-GA switching (tr, tf < 20 ns) while maintaining low gate drive losses the supplied gate current should include a

positive current peak during turn-on, a negative voltage peak during turn-off, and continuous gate current IG to remain on.

An SJT is rapidly switched from its bloc king state to on-state, when the necessary gate charge for turn-on, QG, is supplied by a burst of high

gate current until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged. Ideally, the burst should terminate

when the drain voltage has fallen to its on-s tate value in order to av oid unnec ess ary drive los ses . A negative voltage peak is recommended for

the turn-off transition i n order to ensure that the gate current is not being s upplied under high dV/dt due to t he Miller effect. Whil e satisfactory

turn off can be achieved with VGS = 0 V, a negative VGS value may be used in order to speed up the turn-off transition.

B:1: High Speed, Low Loss Drive with Boost Capacitor

The 2N7640-GA may be driven using a High Speed, Low Loss Drive with Boost Capacitor topology in which multiple voltage levels, a gate

resistor, and a gate capacitor are used to provi de current peaks at turn-on and turn -off for fas t switchi ng and a continuous gate current while in

on-state. As shown in Figure 19, in this topology two gate driver ICs are utilized. An external gate resis tor RG is driven by a low voltage driver

to supply the continuous gate current throughout on-state.and a gate capaci tor CG is driven at a higher voltage level to supply a high current

peak at turn-on and turn-off. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from GeneSiC Semiconductor utilizing this

topology is commercially available for high and low-side driving, its datasheet provides additional details about this drive topology.

Figure 19: High Speed, Low Loss Drive with Boost Capacitor Topology

B:2: High Speed, Low Loss Drive with Boost Inductor

A High Speed, Low-Loss Driver with Boost Inductor is also capable of driving the 2N7640-GA at high-speed. It utilizes a gate drive inductor

instead of a capacitor to provide the high-current gate current pulses IG,on and IG,off. During operation, inductor L is charged to a speci fied IG,on

current value then made to discharge IL into the SJT gate pin using logic control of S1, S2, S3, and S4, as shown in Figure 20. After turn on,

while the device remains on the neces sary steady s tate gate current IG,steady is supplied from s ource VCC through RG. Please refer to t he article

“A current-sourc e concept for fast and efficient driving of silicon carbide transistors” by Dr. Jacek Rąbkowski for additional information on this

driving topology.3

Figure 20: High Speed, Low-Loss Driver with Boost Inductor Topology

3 – Archives of Electrical Engineering. Volume 62, Issue 2, Pages 333–343, ISSN (Print) 0004-0746, DOI: 10.2478/aee-2013-0026, June 2013

Gate

RG

CGIG

SiC SJT

D

S

G

VGH

VGL

Gate Signal

SiC SJT D

S

G

L

R

G

V

EE

V

CC

V

CC

V

EE

S

1

S

2

S

3

S

4

2N7640-GA

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C: Proportional Gate Current Driving

A proportional gate drive topology may be benefi cial for applications in which the 2N7640-GA will operate over a wide range of drain current

conditions to lower the gate drive power consumption. A proportion al gate driver relies on instantaneous drain current I D feedback to vary the

steady state gate current IG,steady supplied to the 2N7640-GA.

C:1: Voltage Controlled Proportional Driver

A voltage controlled proportional driver relies on a gate drive integrated circuit to detect the 2N7640-GA drain-source voltage VDS during on-

state to sense ID. The integrated circuit will then increase or decrease IG in respons e to ID. This allows IG and gate drive power consumption to

reduce while ID is low or for IG to increase when ID increases. A high voltage diode connected between the drain and sense protects the

integrated circuit from high-voltage when blocking. A simplified version of this topology is shown in Figure 21. Additional information will be

available in the future at http://www.genesicsemi.com/references/product-notes/.

Figure 21: Simplified Voltage Controlled Proportional Driver

C:2: Current Controlled Proportional Driver

The current controlled proportional driver relies on a low-loss transformer in the drain or source path to provide feedback of the

2N7640-GA drain current during on-state to supply IG,steady into the gate. IG,steady will increase or decrease in response to ID at a fixed forced

current gain which is set be the turns rati o of the t ransformer, hforce = ID / IG = N2 / N1. 2N7640-GA is initi ally tuned-on us ing a gate current pul se

supplied into an RC drive circuit to allow ID current to begin flowing. This topology allows IG,steady and the gate drive power consumption to

reduce while ID is relatively low or for IG,steady to increase when ID increases. A simplified version of this topology is shown in Figure 22.

Additional information will be available in the future at http://www.genesicsemi.com/references/product-notes/.

Figure 22: Simplified Current Controlled Proportional Driver

SiC SJT

Proportional

Gate Current

Driver D

S

G

Gate Signal

I

G,steady

HV Diode

Sense

Signal Output

SiC SJT D

S

G

N

2

N

2

N

1

N

3

Gate Signal

2N7640-GA

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Section VI: Package Dimensions:

SMD-0.5/TO-276 PACKAGE OUTLINE

NOTE

1. CONTROLLED DIMENSI O N IS MILLIMETER. DIMENSION IN BRACKET I S INCH.

2. DIMENSIONS DO NOT INCLUDE END FLAS H, MOLD FLASH, MATERIAL PROTRUSIO NS

Revision History

Date Revision Comments Supersedes

2014/12/12 6 Updated Electrical Characteristics

2014/08/25 5 Updated Electrical Characteristics

2014/03/19 4 Updated Gate Drive Section

2014/02/14 3 Updated Electrical Characteristics

2013/12/19 2 Updated Gate Drive Section

2013/11/18 1 Updated Electrical Characteristics

2012/08/24 0 Initial release

Published by

GeneSiC Semiconductor, Inc.

43670 Trade Center Place Suite 155

Dulles, VA 20166

GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.

GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any

intellectual property rights is granted by this document.

Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft

navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal

injury and/or property damage.

2N7640-GA

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Section VII: SPICE Model Parameters

This is a secure document. Please copy this code from the SPICE model PDF file on our website

(http://www.genesicsemi.com/images/hit_sic/sjt/2N7640-GA_SPICE.pdf) into LTSPICE (version 4)

software for simulation of the 2N7640-GA.

* MODEL OF GeneSiC Semiconductor Inc.

*

* $Revision: 1.3 $

* $Date: 12-DEC-2014 $

*

* GeneSiC Semiconductor Inc.

* 43670 Trade Center Place Ste. 155

* Dulles, VA 20166

*

* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY

* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED

* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A

* PARTICULAR PURPOSE."

* Models accurate up to 2 times rated drain current.

*

.model 2N7640 NPN

+ IS 9.8338E-48

+ ISE 1.0733E-26

+ EG 3.23

+ BF 110

+ BR 0.55

+ IKF 200

+ NF 1.02

+ NE 2.0

+ RB 2.6

+ IRB 0.002

+ RBM 0.16

+ RE 0.01

+ RC 0.045

+ CJC 8.2281E-10

+ VJC 3.31126

+ MJC 0.48117

+ CJE 2.33957E-9

+ VJE 2.91486

+ MJE 0.48211

+ XTI 3

+ XTB -1.2

+ TRC1 6.20E-03

+ VCEO 600

+ ICRATING 32

+ MFG GeneSiC_Semiconductor

*

* End of 2N7640-GA SPICE Model

Mouser Electronics

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