Z0103/07/09 series
Triacs
Rev. 02 — 12 September 2002 Product data
1. Product profile
1.1 Description
Passivated triacs in conventional and surface mounting packages. Intended for use in
applications requiring high bidirectional transient and blocking voltage capability.
Available in a range of gate current sensitivities for optimum performance.
Product availability:
Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA in SOT54B
Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN in SOT223.
1.2 Features
1.3 Applications
2. Pinning information
Blocking voltage to 800 V (NA and NN
types) 1 A on-state RMS current.
Home appliances Small motor control
Fan controllers Small loads in industrial process
control.
Table 1: Pinning - SOT54B (TO-92), SOT223, simplified outline and symbol
Pin Description Simplified outline Symbol
1 terminal 2 (T2) SOT54B
(TO-92)
SOT54B (TO-92) SOT223
2 gate (G)
3 terminal 1 (T1)
1 terminal 1 (T1) SOT223
2 terminal 2 (T2)
3 gate (G)
4 terminal 2 (T2)
1
3
2
MSB033
4
123
MSB002 - 1
Top view
MBL300
T2
T1 G
Philips Semiconductors Z0103/07/09 series
Triacs
Product data Rev. 02 — 12 September 2002 2 of 12
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3. Ordering information
3.1 Ordering options
4. Limiting values
Table 2: Ordering information
Part Number Voltage (VDRM) Gate Sensitivity (IGT)Package
Z0103MA 600 V 3 mA SOT54B (TO-92)
Z0103NA 800 V 3 mA SOT54B (TO-92)
Z0107MA 600 V 5 mA SOT54B (TO-92)
Z0107NA 800 V 5 mA SOT54B (TO-92)
Z0109MA 600 V 10 mA SOT54B (TO-92)
Z0109NA 800 V 10 mA SOT54B (TO-92)
Z0103MN 600 V 3 mA SOT223
Z0103NN 800 V 3 mA SOT223
Z0107MN 600 V 5 mA SOT223
Z0107NN 800 V 5 mA SOT223
Z0109MN 600 V 10 mA SOT223
Z0109NN 800 V 10 mA SOT223
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage 25 °CTj125 °C
Z0103/07/09MA; Z0103/07/09MN - 600 V
Z0103/07/09NA; Z0103/07/09NN - 800 V
VRRM repetitive peak reverse voltage 25 °CTj125 °C
Z0103/07/09MA; Z0103/07/09MN - 600 V
Z0103/07/09NA; Z0103/07/09NN - 800 V
ITSM non-repetitive peak on-state current full sine wave; Tj= 25 °C prior to surge;
Figure 2 and Figure 3
t=20ms - 8 A
t = 16.7 ms - 8.5 A
IT(RMS) RMS on-state current all conduction angles; Figure 4
SOT223 Tsp =90°C-1A
SOT54B (TO-92) Tlead =50°C-1A
I2tI
2t for fusing t =10 ms - 0.35 A2s
dIT/dt rate of rise of on-state current ITM = 1.0 A; IG=2xI
GT; dIG/dt = 100 mA/µs - 20 A/µs
IGM peak gate current tp=20µs - 1.0 A
PGM peak gate power - 2.0 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature 40 +150 °C
Tjjunction temperature 40 +125 °C
Philips Semiconductors Z0103/07/09 series
Triacs
Product data Rev. 02 — 12 September 2002 3 of 12
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
α= conduction angle n = number of cycles at f = 50 Hz
Fig 1. Maximum on-state power dissipation as a
function of RMS on-state current; typical
values.
Fig 2. Maximum permissible non-repetitive peak
on-state current as a function of number of
cycles for sinusoidal currents; typical values.
Fig 3. Maximum permissible non-repetitive peak
on-state current as a function of surge duration
for sinusoidal currents; typical values.
Fig 4. Maximum permissible RMS on-state current as
a function of lead temperature and solder point
temperature; typical values.
0
0.4
1.6
0.8
1.2
1.20 0.4 0.8
α =
180°
120°
90°
60°
30°
Ptot
(W)
IT(RMS) (A)
α
α
003aaa199
10
8
6
4
2
0110 102103
n
ITSM
(A)
003aaa200
102
10
1
10-1
ITSM
(A) δIT/δt limit
10-2
10-3
10-4
10-5 ts (s)
003aaa207
SOT223
(Tsp)
SOT54B
(Tlead)
150
50 1000 Tlead, Tsp (°C)
IT(RMS)
(A)
0
1.2
0.8
0.4
003aaa201
Philips Semiconductors Z0103/07/09 series
Triacs
Product data Rev. 02 — 12 September 2002 4 of 12
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5. Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from junction to solder
point for SOT223 Figure 5 --25K/W
Rth(j-lead) thermal resistance from junction to lead for
SOT54B (TO-92) Figure 5 --60K/W
Rth(j-a) thermal resistance from junction to ambient
SOT223 minimum footprint; mounted on a PCB - 60 - K/W
SOT54B (TO-92) vertical in free air - 150 - K/W
for SOT54B (TO-92)
for SOT223
Fig 5. Transient thermal impedance from junction to lead and junction to solder point as a function of pulse
duration.
a
11010
2103
10-1
10-2
10-3
10-4
10-5 tp (s)
10
1
10-1
10-2
10-3
10-4
SOT223
SOT54B
003aaa206
aZth j lead()
Rth j lead()
---------------------------
=
aZth j sp()
Rth j sp()
-----------------------
=
Philips Semiconductors Z0103/07/09 series
Triacs
Product data Rev. 02 — 12 September 2002 5 of 12
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD=12V; R
L=30; T2+ G+; T2+ G; T2G;
Figure 9
Z0103MA/MN/NA/NN - - 3 mA
Z0107MA/MN/NA/NN - - 5 mA
Z0109MA/MN/NA/NN - - 10 mA
Z0103MA/MN/NA/NN VD= 12 V; RL=30; T2G+; Figure 9 --5mA
Z0107MA/MN/NA/NN - - 7 mA
Z0109MA/MN/NA/NN - - 10 mA
ILlatching current VD=12V; R
L=30; T2+ G+; T2G; T2G+;
Figure 7
Z0103MA/MN/NA/NN - - 7 mA
Z0107MA/MN/NA/NN - - 10 mA
Z0109MA/MN/NA/NN - - 15 mA
Z0103MA/MN/NA/NN VD=12V; R
L=30; T2+ G;Figure 7 --15mA
Z0107MA/MN/NA/NN - - 20 mA
Z0109MA/MN/NA/NN - - 25 mA
IHholding current IT=50mA;Figure 8
Z0103MA/MN/NA/NN - - 7 mA
Z0107MA/MN/NA/NN - - 10 mA
Z0109MA/MN/NA/NN - - 10 mA
VTon-state voltage Figure 6 - 1.3 1.6 V
VGT gate trigger voltage VD=12V; R
L=30; Tj=25°C; Figure 11 - - 1.3 V
VD=V
DRM; RL= 3.3 k; Tj= 125 °C; Figure 11 0.2 - - V
IDoff-state leakage current VD=V
DRM(max); VR=V
RRM(max); Tj= 125 °C - - 500 µA
Dynamic characteristics
dVD/dt critical rate of rise of
off-state voltage VD= 0.67 VDRM(max); Tj= 110 °C; exponential
waveform; gate open; Figure 10
Z0103MA/MN/NA/NN 10 - - V/µs
Z0107MA/MN/NA/NN 20 - - V/µs
Z0109MA/MN/NA/NN 50 - - V/µs
dVcom/dt critical rate of change of
commutating voltage VD= 400 V; IT= 1 A; Tj= 110 °C;
dIcom/dt = 0.44 A/ms; gate open
Z0103MA/MN/NA/NN 0.5 - - V/µs
Z0107MA/MN/NA/NN 1 - - V/µs
Z0109MA/MN/NA/NN 2 - - V/µs
Philips Semiconductors Z0103/07/09 series
Triacs
Product data Rev. 02 — 12 September 2002 6 of 12
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 6. On-state current as a function of on-state
voltage; typical and maximum values. Fig 7. Normalized latching current as a function of
junction temperature; typical values.
Fig 8. Normalized holding current as a function of
junction temperature; typical values. Fig 9. Normalized gate trigger current as a function of
junction temperature; typical values.
25 °C
max
8
6
4
2
0
IT
(A)
0123
VT (V)
003aaa202
125 °C
max
125 °C
typ
2
0
1
3
-50 0 50 100 150
a
Tj (°C)
003aaa203
aIL
IL25C
°
()
-------------------
=
3
2
1
0
-50 0 50 100 150
a
Tj (°C)
003aaa204
4
3
2
1
0
a
0 50 100 150-50 Tj (°C)
T2+ G+
T2+ G-
T2- G+
T2- G-
003aaa205
aIH
IH25C
°
()
--------------------
=aIGT
IGT 25 C
°
()
-----------------------
=
Philips Semiconductors Z0103/07/09 series
Triacs
Product data Rev. 02 — 12 September 2002 7 of 12
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 10. Normalized critical rate of rise of off-state
voltage as a function of junction temperature;
typical values.
Fig 11. Normalized gate trigger voltage as a function of
junction temperature; typical values.
1.6
1.2
0.8
0.4
0
a
050 100 150
Tj (
°
C)
003aaa208
150100500-50
1.6
1.2
0.8
0.4
0
a
003aaa209
Tj (
°
C)
adVDdt
dVD25°C()
dt
-----------------------------------
=aVGT
VGT 25 C
°
()
-------------------------
=
Philips Semiconductors Z0103/07/09 series
Triacs
Product data Rev. 02 — 12 September 2002 8 of 12
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7. Package outline
Fig 12. SOT54B (TO-92).
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 4.8
4.4
b
0.45
0.36
c
0.43
0.33
D
4.7
4.5
d
1.7
1.4
E
3.7
3.4
L
15.2
12.7 1.55
1.45
e
2.54
e1
1.27
L1(1)
b1
max
0.48
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54B TO-92 02-01-29
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54B
e1e
1
2
3
Philips Semiconductors Z0103/07/09 series
Triacs
Product data Rev. 02 — 12 September 2002 9 of 12
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 13. SOT223.
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
Philips Semiconductors Z0103/07/09 series
Triacs
Product data Rev. 02 — 12 September 2002 10 of 12
9397 750 10102 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8. Revision history
Table 6: Revision history
Rev Date CPCN Description
02 20020912 Product data; supersedes data of 11 April 2002
Table 5 “Characteristics” Addition of dVcom/dt data. Correction to dVD/dt data
01 20020411 - Product data; initial version (9397 750 09419)
9397 750 10102
Philips Semiconductors Z0103/07/09 series
Triacs
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data Rev. 02 — 12 September 2002 11 of 12
9397 750 10102
Philips Semiconductors Z0103/07/09 series
Triacs
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data Rev. 02 — 12 September 2002 11 of 12
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.Fax: +31 40 27 24825
9. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Data sheet status[1] Product status[2] Definition
Objective data Development This data sheet contains data from the objectivespecification forproduct development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 12 September 2002 Document order number: 9397 750 10102
Contents
Philips Semiconductors Z0103/07/09 series
Triacs
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
3.1 Ordering options. . . . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
5.1 Transient thermal impedance . . . . . . . . . . . . . . 4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11