APT11044JFLL 1100V 22A 0.440 POWER MOS 7 R FREDFET (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP (R) * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol S S D G S All Ratings: TC = 25C unless otherwise specified. Parameter APT11044JFLL UNIT 1100 Volts Drain-Source Voltage 22 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 521 Watts Linear Derating Factor 4.17 W/C PD TJ,TSTG 88 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 -55 to 150 C 300 Amps 22 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 1100 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 11A) TYP MAX UNIT Volts 0.440 Ohms Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A 11-2003 Characteristic / Test Conditions 050-7179 Rev A Symbol APT11044JFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Ciss Input Capacitance VGS = 0V Coss Output Capacitance VDS = 25V C rss 3 Total Gate Charge Qgs Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time ID = 22A @ 25C RESISTIVE SWITCHING VGS = 15V Rise Time td(off) VDD = 550V Turn-off Delay Time tf ID = 22A @ 25C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25C 6 Turn-on Switching Energy Eoff Turn-off Switching Energy 581 ID = 22A, RG = 5 INDUCTIVE SWITCHING @ 125C 6 ns 961 VDD = 733V, VGS = 15V Eon nC 14 RG = 0.6 Eon UNIT pF 153 180 32 111 18 9 45 VGS = 10V Qgd MAX 5643 828 VDD = 550V Gate-Source Charge tr TYP f = 1 MHz Reverse Transfer Capacitance Qg MIN J 1812 VDD = 733V VGS = 15V ID = 22A, RG = 5 899 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ Characteristic / Test Conditions MIN TYP MAX 22 Continuous Source Current (Body Diode) (Body Diode) 88 Diode Forward Voltage 2 (VGS = 0V, IS = -22A) 1.3 Volts 18 V/ns dv/ dt 5 Reverse Recovery Time (IS = -22A, di/dt = 100A/s) Tj = 25C 320 Tj = 125C 650 Q rr Reverse Recovery Charge (IS = -22A, di/dt = 100A/s) Tj = 25C 3.60 Tj = 125C 9.72 IRRM Peak Recovery Current (IS = -22A, di/dt = 100A/s) Tj = 25C 16.5 Tj = 125C 24.7 t rr Amps Pulsed Source Current 1 Peak Diode Recovery dt UNIT ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.24 RJC Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.20 0.7 0.15 0.5 Note: 0.10 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7179 Rev A 11-2003 0.25 0.3 t1 t2 0.05 0.1 Duty Factor D = t1/t2 SINGLE PULSE Peak TJ = PDM x ZJC + TC 0.05 10-5 10-4 10-3 C/W 4 Starting Tj = +25C, L = 12.40mH, RG = 25, Peak IL = 22A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -22A di/dt 700A/s VR 1100 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0 UNIT 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT11044JFLL 50 RC MODEL 0.0529 Power (watts) 0.0651 0.123 7V 45 0.02037F 0.173F 0.490F ID, DRAIN CURRENT (AMPERES) Junction temp. (C) VGS =15 & 10V 40 6.5V 35 30 25 6V 20 15 10 5.5V 5 Case temperature. (C) 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 50 TJ = -55C 40 30 TJ = +25C 20 TJ = +125C 10 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 20 15 10 5 0 25 GS 1.30 VGS=10V 1.20 1.10 1.00 VGS=20V 0.90 0.80 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 3 I D V 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 11A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 0 -50 NORMALIZED TO V = 10V @ 11A 1.15 25 2.5 1.40 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 11-2003 60 VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 050-7179 Rev A ID, DRAIN CURRENT (AMPERES) 70 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL APT11044JFLL 20,000 OPERATION HERE LIMITED BY RDS (ON) 50 10,000 Ciss 100S 10 5 1mS TC =+25C TJ =+150C SINGLE PULSE C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 88 10mS D = 22A VDS= 220V 12 VDS= 550V 8 VDS= 880V 4 0 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I Coss Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 1 1 10 100 1100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 1,000 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 90 300 80 td(off) 250 70 V DD R G 60 = 733V tr and tf (ns) td(on) and td(off) (ns) V 200 = 5 T = 125C J 150 L = 100H = 733V DD R G tf = 5 T = 125C J 50 L = 100H 40 30 100 20 tr 50 10 td(on) 0 0 0 3000 5 15 20 25 30 35 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R G 050-7179 Rev A 0 15 20 25 30 35 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT V DD I D 5000 T = 125C J L = 100H E ON includes 2000 5 10 6000 = 733V = 5 diode reverse recovery. 1500 Eon 1000 Eoff 500 SWITCHING ENERGY (J) SWITCHING ENERGY (J) 11-2003 2500 10 = 733V = 22A T = 125C J L = 100H EON includes 4000 Eoff diode reverse recovery. 3000 Eon 2000 1000 0 0 0 5 10 15 20 25 30 35 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT11044JFLL 10 % 90% Gate Voltage Gate Voltage T = 125 C J td(off) T = 125 C J td(on) 90% Drain Voltage tr 90% 5% Drain Current t f 5% 10 % 10% 0 Drain Voltage Switching Energy Switching Energy Drain Current Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF120 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 11-2003 r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7179 Rev A 7.8 (.307) 8.2 (.322) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)