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High Performance Regulators for PCs
Main Power Supply
for Notebook PCs
(With Built-in Linear Regulator)
BD9528AMUV
Description
BD9528AMUV is a 2ch switching regulator controller with high output current which can achieve low output voltage (1.0V
5.5V) from a wide input voltage range (5.5V28V). High efficiency for the switching regulator can be realized by utilizing an
external N-MOSFET power transistor. A new technology called H3RegTM(High speed, High efficiency, High performance) is
a Rohm proprietary control method to realize ultra high transient response against load change. SLLM (Simple Light Load
Mode) technology is also integrated to improve efficiency in light load mode, providing high efficiency over a wide load range.
For protection and ease of use, 2ch LDO (5V/3.3V (total 100mA)), the soft start function, variable frequency function, short
circuit protection function with timer latch, over voltage protection, and Power good function are all built in. This switching
regulator is specially designed for Main Power Supply of laptop PC.
Features
1) 2ch H3REGTM DC/DC Converter controller
2) Adjustable Simple Light Load Mode (SLLM), Quiet Light Load Mode (QLLM) and Forced continuous Mode
3) Ther mal Shut Down (TSD), Under Voltage LockOut (UVLO), Over Current Protection (OCP),
Over Voltage Protection (OVP), Short circuit protection with 0.75ms timer-latch (SCP)
4) Soft start function to minimize rush current during startup
5) Switching Frequency Variable (f=150kHz500kHz)
6) Built-in Power good circuit
7) Built-in 2ch Linear regulator (5V/3.3V (total 100mA))
8) Built in reference voltage(0.7V)
9) VQFN032-V5050 package
10) Built-in BOOT-Di
11) Built-in output discharge
12) ESD Susceptibility ( HBM (Human Body Model) : 2kV, MM (Machine Model) : 200V )
Applications
Laptop PC, Desktop PC, LCD-TV, Digital Components
No.11030JAT46
Technical Note
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BD9528AMUV
Maximum Absolute Ratings (Ta=25)
Parameter Symbol Limits Unit
Terminal Voltage
VIN, CTL, SW1, SW2 30 *1*2 V
EN1, EN2, PGOOD1, PGOOD2
Vo1, Vo2, MCTL1, MCTL2 6 *1*2 V
FS1, FS2, FB1, FB2, ILIM1, ILIM2,
SS1, SS2, LG1, LG2, REF,REG2 REG1+0.3 *1 V
BOOT1, BOOT2 35 *1*2 V
BOOT1-SW1, BOOT2-SW2,
HG1-SW1, HG2-SW2 7 *1*2 V
HG1 BOOT1+0.3 *1*2 V
HG2 BOOT2+0.3 *1*2 V
PGND1, PGND2 AGND±0.3 *1*2 V
Power Dissipation1 Pd1 0.38 *3 W
Power Dissipation2 Pd2 0.88 *4 W
Power Dissipation3 Pd3 3.26 *5 W
Power Dissipation4 Pd4 4.56 *6 W
Operating temperature Range Topr -20+100
Storage temperature Range Tstg -55+150
Junction Temperature Tjmax +150
*1 Do not however exceed Pd.
*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.
*3 Reduced by 3.0mW for each increase in Ta of 1 over 25 (when don’t mounted on a heat radiation board )
*4 Reduced by 7.0mW for increase in Ta of 1 over 25. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB which has 1 layer.
(Copper foil area : 20.2mm2)
*5 Reduced by 26.1mW for increase in Ta of 1 over 25. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB which has 4 layers.
(1
st and 4th copper foil area : 20.2mm2, 2nd and 3rd copper foil area : 5505mm2)
*6 Reduced by 36.5mW for increase in Ta of 1 over 25. (when mounted on a board 74.2mm×74.2mm×1.6mm Glass-epoxy PCB which has 4 layers.
(All copper foil area : 5505mm2)
Operating Conditions (Ta=25)
Parameter Symbol Min. Max. Unit
Terminal Voltage
VIN 5.5 28 V
CTL -0.3 28 V
EN1, EN2, MCTL1, MCTL2 -0.3 5.5 V
BOOT1, BOOT2 4.5 33 V
SW1, SW2 -0.3 28 V
BOOT1-SW1, BOOT2-SW2,
HG1-SW1, HG2-SW2 -0.3 5.5 V
Vo1, Vo2, PGOOD1, PGOOD2 -0.3 5.5 V
MIN ON TIME TONmin - 150 nsec
This product should not be used in a radioactive environment.
Technical Note
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BD9528AMUV
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta=25 VIN=12V, CTL=OPEN, EN1=EN2=5V, FS1=FS2=51kΩ)
Parameter Symbol Limits Unit Condition
Min. Typ. Max.
VIN standby current ISTB 70 150 250 μA EN1=EN2=0V, CTL=5V
VIN bias current IIN 60 130 230 μAVo1=5V
VIN shut down mode current ISHD 6 12 18 μA CTL=0V
CTL Low Voltage VCTLL -0.3 - 0.8 V
CTL High Voltage VCTLH 2.3 - 28 V
CTL bias current ICTL -18 -12 -6 μA CTL=0V
EN Low Voltage VENL -0.3 - 0.8 V
EN High Voltage VENH 2.3 - 5.5 V
EN bias current IEN - 3 6 μA EN=3V
[5V linear regulator](VIN)
REG1 output voltage VREG1 4.90 5.00 5.10 V IREG1=1mA
Maximum current IREG1 100 - - mA IREG2=0mA*
Line Regulation Reg.l1 - 90 180 mV VIN=5.5 to 28V
Load Regulation Reg.L1 - 30 50 mV IREG1=0 to 30mA
[3.3V linear regulator]
REG2 output voltage VREG2 3.27 3.30 3.33 V IREG2=1mA
Maximum current IREG2 100 - - mA IREG1=0mA*
Line Regulation Reg.l2 - - 20 mV VIN=5.5 to 28V
Load Regulation Reg.L2 - - 30 mV IREG2=0 to 30mA
[5V linear regulator](Vo1)
Input threshold voltage REG1th 4.1 4.4 4.7 V Vo1: Sweep up
Input delay time TREG1 1.5 3 6 ms
Switch resistance RREG1 - 1.0 3.0
[Under Voltage lock out block]
REG1 threshold voltage REG1_UVLO 3.9 4.2 4.5 V REG1: Sweep up
Hysteresis voltage dV_UVLO 50 100 200 mV REG1: Sweep down
[Output voltage sense block]
Feedback voltage1 VFB1 0.693 0.700 0.707 V
FB1 bias current IFB1 - 0 1 μA FB1=REF
Output discharge resistance1 RDISOUT1 50 100 200
Feedback voltage2 VFB2 0.693 0.700 0.707 V
FB2 bias current IFB2 - 0 1 μA FB2=REF
Output discharge resistance2 RDISOUT2 50 100 200
* IREG1+IREG2100mA
Technical Note
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BD9528AMUV
ELECTRICAL CHARACTERISTICS
(unless otherwise noted, Ta = 2 5 VIN=12V, CTL=OPEN, EN1=EN2=5V, FS1=FS2=51kΩ)
Parameter Symbol Limits Unit Condition
Min. Typ. Max.
[H3REG block]
Ontime1 TON1 0.760 0.910 1.060 μs Vo1= 5V
Ontime2 TON2 0.470 0.620 0.770 μs Vo2= 3.3V
Maximum On time 1 TONMAX1 2.5 5 10 μs Vo1= 5V
Maximum On time 2 TONMAX2 1.65 3.3 6.6 μs Vo2= 3.3V
Minimum Off time TOFFMIN - 0.2 0.4 μs
[FET driver block]
HG higher side ON resistor HGHON - 3.0 6.0
HG lower side ON resistor HGLON - 2.0 4.0
LG higher side ON resistor LGHON - 2.0 4.0
LG lower side ON resistor LGLON - 0.5 1.0
[Over voltage protection block]
OVP threshold voltage VOVP 0.77
(+10%)
0.84
(+20%)
0.91
(+30%) V
OVP Hysteresis dV_OVP 50 150 300 mV
[Short circuit protection block]
SCP threshold voltage VSCP 0.42
(-40%)
0.49
(-30%)
0.56
(-20%) V
Delay time TSCP 0.4 0.75 1.5 ms
Current limit protection block]
Offset voltage dVSMAX 80 100 120 mV ILIM=100kΩ
[Power good block]
Power good low threshold VPGTHL 0.525
(-25%)
0.595
(-15%)
0.665
(-5%) V
Power good low voltage VPGL - 0.1 0.2 V IPGOOD=1mA
Delay time TPGOOD 0.4 0.75 1.5 ms
Power good leakage current ILEAKPG -2 0 2 μA VPGOOD=5V
[Soft start block]
Charge current ISS 1.5 2.3 3.1 μA
Standby voltage VSS_STB - - 50 mV
[Mode control block]
MCTL Low voltage VMCTL_L -0.3 - 0.3 V
MCTL High voltage VMCTL_H 2.3 - REG1
+0.3 V
MCTL bias current Imctl 8 16 24 μA MCTL=5V
Technical Note
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BD9528AMUV
Output condition table
Input Output
CTL EN1 EN2 REG1(5V) REG2(3.3V) DC/DC1 DC/DC2
Low Low Low OFF OFF OFF OFF
Low Low High OFF OFF OFF OFF
Low High Low OFF OFF OFF OFF
Low High High OFF OFF OFF OFF
High Low Low ON ON OFF OFF
High Low High ON ON OFF ON
High High Low ON ON ON OFF
High High High ON ON ON ON
CTL pin is connected to VIN pin with 1MΩ resistor(pull up) internal IC.
EN pin is connected to AGND pin with 1MΩ resistor(pull down) internal IC.
Block Diagram, Application circuit
3 2 1 31 32 22 23 24 26 25
11
6
8
Short through
Protection
Circuit
SLLM
TM
Block
H3RegTM
Controller
Block
Time r
Timer
14
12
17
21
Short th rou g h
Protection
Ci rcuit
SL L M
TM
Block
H3RegTM
Controller
Block
4
30 29 18
Reference
Bl oc k
5V
Reg
Thermal
Pr otection
EN1
REF
FB1
10 15
13
RFS1
FS1
A
GND
PGND1
LG1
SW1
HG1
BOOT1
PG ND2
LG 2
SW2
HG2
BOOT2
VIN
VIN
Vo 2
A
djustable
Vo1
A
djustable
REG1
REG1
REG1 REG1
CL1
SCP1
OVP 1
CL2
SCP2
OVP2
MCTL
FS2
MCT
L
FS1
EN 1
EN 2
Shor t Circuit Pr otect
SCP2
REF
Shor t Circuit Pr otect
SCP1
CL1
Over Current
Protect
CL2
Over Current
Protect
TSD
REG1
Power Good
MCTL
SLLM Mode C ontr ol
REG1
5V
REG1
MCTL1
VIN
VIN
5.528V
S
S2
FB2
FS2
EN2
PGOOD1
19
SS 1
Over Voltage Protect
OVP2
Over Voltage Protect
OVP1
REF
928
REG2
3.3V
CT
L
20
REG1
5
REG1
Power Good
7
Vo2
REG
2
PG OO D2
3.3V
Reg
Vo1
Timer
Ti mer
UVLO
PGND2
PGND1
27
Vo1
REF
ILIM1
LIM2
SW 2
SW1
16
MCTL
2
Technical Note
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BD9528AMUV
Pin Configuration
Input Control Mode
MCTL1 MCTL2
Low Low SLLM
Low High QLLM
High Low Forced Continuous Mode
High High Forced Continuous Mode
Pin Function Table
PIN No. PIN name PIN Function
1 SW2 Highside FET source pin 2
2 HG2 Highside FET gate drive pin 2
3 BOOT2 HG Driver power supply pin 2
4 EN2 Vo2 ON/OFF pin (High=ON, Low,OPEN=OFF)
5 PGOOD2 Vo2 Power Good Open Drain Output pin
6 SS2 Vo2 Soft start pin
7 Vo2 Vo2 Output voltage sense pin
8 ILIM2 OCP setting pin 2
9 CTL Linear regulator ON/OFF pin (High,OPEN=ON, Low=OFF)
10 FS2 Input pin for setting Vo2 frequency
11 FB2 Vo2 output voltage feedback pin
12 REF Output voltage setting pin
13 AGND Input pin Ground
14 FB1 Vo1 output voltage feedback pin
15 FS1 Input pin for setting Vo1 frequency
16 MCTL2 Mode switch pin 2 ( OPEN = L )
17 ILIM1 OCP setting pin 1
18 MCTL1 Mode switch pin 1 ( OPEN = L )
19 SS1 Vo1 Soft start pin
20 PGOOD1 Vo1 Power Good Open Drain Output pin
21 EN1
Vo1 ON/OFF pin
(High=ON, Low,OPEN=OFF)
22 BOOT1 HG Driver power supply pin
23 HG1 Highside FET gate drive pin 1
24 SW1 Highside FET source pin 1
25 PGND1 Lowside FET source pin 1
26 LG1 Lowside FET gate drive pin 1
27 Vo1 Vo1 Output voltage sense pin
28 REG2 3.3V Linear regulator output pin
29 REG1 5V Linear regulator output pin
30 VIN Power supply input pin
31 LG2 Lowside FET gate drive pin 2
32 PGND2 Lowside FET source pin 2
reverse FIN Exposed Pad1, connect to GND
3 1 2 4 5 6 7 8
9
10
11
12
13
14
15
16
24 23 22 21 20 19 18 17
32
31
30
29
28
27
26
25
PGND1
LG1
SW2
HG2
BOOT2
PGOOD2
SS2
Vo2
ILIM2
SW1
HG1
BOOT1
PGOOD1
SS1
MCTL1
REF
MCTL2
FS1
FB1
A
GND
ILIM1
FB2
FS2
CTL
REG2
REG1
VIN
LG2
PGND2
FIN
Vo1
EN1
EN2
MCTL pin is connected to AGND pin with 500kΩ resistor ( pull down) internal IC
Technical Note
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BD9528AMUV
Reference data
Fig.1 Switching Waveform
(Vo=5V, Io=0A, PWM)
Fig.2 Switching Waveform
(Vo=5V, Io=8A, PWM)
Fig.3 Switching Waveform
(Vo=5V, Io=0A, QLLM)
Fig.4 Switching Waveform
(Vo=5V, Io=0A, SLLM)
Fig.5 Switching Waveform
(Vo=3.3V, Io=0A, PWM)
Fig.6 Switching Waveform
(Vo=3.3V, Io=8A, PWM)
Fig.7 Switching Waveform
(Vo=3.3V, Io=0A, QLLM)
Fig.8 Switching Waveform
(Vo=3.3V, Io=0A, SLLM)
Fig.9 Switching Waveform
(Vo=1V, Io=0A, PWM)
Fig.10 Switching Waveform
(Vo=1V, Io=8A, PWM)
Fig.11 Switching Waveform
(Vo=1V, Io=0A, QLLM)
Fig.12 Switching Waveform
(Vo=1V, Io=0A, SLLM)
HG
10V/div
SW
10V/div
LG
5V/div
2μs
HG
10V/div
SW
10V/div
LG
5V/div
10μs
HG
10V/div
SW
10V/div
LG
5V/div
2μs
HG
10V/div
SW
10V/div
LG
5V/div
2μs
HG
10V/div
SW
10V/div
LG
5V/div
2μs
HG
10V/div
SW
10V/div
LG
5V/div
10μs
HG
10V/div
SW
10V/div
LG
5V/div
2μs
HG
10V/div
SW
10V/div
LG
5V/div
10μs
HG
10V/div
SW
10V/div
LG
5V/div
10μs
HG
10V/div
SW
10V/div
LG
5V/div
2μs
HG
10V/div
SW
10V/div
LG
5V/div
10μs
HG
10V/div
SW
10V/div
LG
5V/div
10μs
Technical Note
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BD9528AMUV
Reference data
0
20
40
60
80
100
1 10 100 1000 10000
Io[mA]
η[%]
0
20
40
60
80
100
1 10 100 1000 10000
Io[mA]
η[%]
0
20
40
60
80
100
1 10 100 1000 10000
Io[mA]
η[%]
0
20
40
60
80
100
1 10 100 1000 10000
Io[mA]
η[%]
0
20
40
60
80
100
1 10 100 1000 10000
Io[mA]
η[%]
0
20
40
60
80
100
1 10 100 1000 10000
Io[mA]
η[%]
0
20
40
60
80
100
1 10 100 1000 10000
Io[mA]
η[%]
0
20
40
60
80
100
1 10 100 1000 10000
Io[mA]
η[%]
0
20
40
60
80
100
1 10 100 1000 10000
Io[mA]
η[%]
Fig.13 Efficiency
(Vo=5V, PWM)
Fig.14 Efficiency
(Vo=5V, QLLM)
Fig.15 Efficiency
(Vo=5V, SLLM)
Fig.16 Efficiency
(Vo=3.3V, PWM)
Fig.17 Efficiency
(Vo=3.3V, QLLM)
Fig.18 Efficiency
(Vo=3.3V, SLLM)
Fig.19 Efficiency
(Vo=1V, PWM)
Fig.20 Efficiency
(Vo=1V, QLLM)
Fig.21 Efficiency
(Vo=1V, SLLM)
Fig.22 Transient Response
(Vo=5V, PWM, Io=08A)
Fig.23 Transient Response
(Vo=5V, PWM, Io=80A)
Fig.24 Transient Response
(Vo=3.3V, PWM, Io=08A)
7V 12V
21V
7V
12V
21V
7V
12V
21V
7V
12V
21V
7V
12V
21V
7V
12V
21V
7V
12V
21V
5V
7V 12V
21V
21V
12V
7V
Vo
100mV/div
IL
5A/div
IO
5A/div
20μs
Vo
100mV/div
IL
5A/div
IO
5A/div
20μs
Vo
100mV/div
IL
5A/div
IO
5A/div
20μs
Technical Note
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BD9528AMUV
Reference data
Fig.25 Transient Response
(Vo=3.3V, PWM, Io=80A)
Fig.26 Transient Response
(Vo=1V, PWM, Io=08A)
Fig.27 Transient Response
(Vo=1V, PWM, Io=80A)
Fig.28 Output Voltage
(Vo=5V, PWM, Io=0A)
Fig.29 Output Voltage
(Vo=5V, PWM, Io=8A)
Fig.30 Output Voltage
(Vo=5V, QLLM, Io=0A)
Fig.31 Output Voltage
(Vo=5V, SLLM, Io=0A)
Fig.32 Output Voltage
(Vo=3.3V, PWM, Io=0A)
Fig.33 Output Voltage
(Vo=3.3V, PWM, Io=8A)
Fig.34 Output Voltage
(Vo=3.3V, QLLM, Io=0A)
Fig.35 Output Voltage
(Vo=3.3V, SLLM, Io=0A)
Fig.36 Output Voltage
(Vo=1V, PWM, Io=0A)
Vo
100mV/div
IL
5A/div
IO
5A/div
20μs
Vo
100mV/div
IL
5A/div
IO
5A/div
20μs
Vo
50mV/div
10μs
Vo
100mV/div
IL
5A/div
IO
5A/div
20μs
Vo
50mV/div
2μs
Vo
50mV/div
2μs
Vo
50mV/div
2μs
Vo
50mV/div
2μs
Vo
50mV/div
2μs
Vo
50mV/div
10μs
Vo
50mV/div
2μs
Vo
50mV/div
2μs
Technical Note
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BD9528AMUV
Reference data
Fig.37 Output Voltage
(Vo=1V, PWM, Io=8A)
Fig.38 Output Voltage
(Vo=1V, QLLM, Io=0A)
Fig.39 Output Voltage
(Vo=1V, SLLM, Io=0A)
Vo
50mV/div
2μs
Vo
50mV/div
10μs
Vo
50mV/div
2μs
Fig.43 Wake up waveform
(EN1/2PGOOD1/2)
Fig.44 Io-frequency
(Vo=5V, PWM, RFS=68kΩ)
Fig.45 Io-frequency
(Vo=3.3V, PWM, RFS=68kΩ)
Fig.46 FS-ONTIME Fig.48 Ta-IOCP
(Vo=5V)
Fig.47 FS-frequency
Fig.40 Wake up waveform
(EN1=EN2)
Fig.41 Wake up waveform
(EN2EN1)
Fig.42 Wake up waveform
(EN1EN2)
IOUT-frequency (VOUT=5V, R(FS)=68kΩ)
300
350
400
450
500
01234567
IOUT [A]
frequency [kHz]
VIN=7.5V
VIN=12V
VIN=18V
IOUT-frequency (VOUT=5V, R(FS)=68kΩ)
300
350
400
450
500
01234567
IOUT [A]
frequency [kHz]
VIN=7.5V
VIN=12V
VIN=18V
0
0.5
1
1.5
2
2.5
050100150
RFS [kΩ]
ONTIME [usec]
VOUT=5V
VOUT=3.3V
0
100
200
300
400
500
600
700
0 50 100 150
RFS [kΩ]
frequency [kHz]
VOUT=5V
VOUT=3.3V
0.000
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
0246810121416
IOUT [A]
VOUT [V]
VIN=7.5V(-5℃
VIN=21V(-5℃)
VIN=7.5V(75℃
VIN=21V(75℃)
EN1
5V/div
Vo1
2V/div
EN2
5V/div
Vo2
2V/div
EN1
5V/div
Vo1
2V/div
EN2
5V/div
Vo2
2V/div
EN1
5V/div
Vo1
2V/div
EN2
5V/div
Vo2
2V/div
EN1
5V/div
PGOOD1
2V/div
EN2
5V/div
PGOOD2
2V/div
Technical Note
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BD9528AMUV
Reference data
Fig.50 IREG1-REG1 Fig.51 IREG2-REG2
Fig.49 Ta-IOCP
(Vo=3.3V)
IOUT - REG2 voltage
2.8
2.9
3
3.1
3.2
3.3
3.4
0 50 100 150 200 250
IOUT [mA]
REG2 voltage [V]
IOUT - REG1 voltage
4.5
4.6
4.7
4.8
4.9
5
5.1
0 50 100 150 200 250
IOUT [mA]
REG1 voltage [V]
0.000
0.500
1.000
1.500
2.000
2.500
3.000
3.500
0246810121416
IOUT [A]
VOUT [V]
VIN=7.5V(-5℃
VIN=21V(-5℃)
VIN=7.5V(75℃
VIN=21V(75℃)
Technical Note
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BD9528AMUV
Pin Descriptions
VIN (30 pin)
This is the main power supply pin. The input supply voltage range is 5.5V to 28V. The duty cycle of BD9528AMUV is
determined by input voltage and control output voltage. Therefore, when VIN voltage fluctuated, the output voltage also
becomes unstable. Since VIN line is also the input voltage of switching regulator, stability depends on the impedance of
the voltage supply. It is recommended to establish bypass capacitor and CR filter suitable for the actual application.
CTL (9 pin)
When CTL pin voltage is at least 2.3V, the status of the linear regulator output becomes active (REG1=5V, REG2=3.3V).
Conversely, the status switches off when CTL pin voltage goes lower than 0.8V. The switching regulator doesn’t become
active when the status of CTL pin is low, if the status of EN pin is high.
(CTL pin is connected to VIN pin with 1MΩ resistor(pull up) intermall IC)
EN1, 2 (21 pin, 4 pin)
When EN pin voltage is at least 2.3V, the status of the switching regulator becomes active. Conversely, the status switches
off when EN pin voltage goes lower than 0.8V.
(EN pin is connected to AGND pin with 1MΩ resistor(pull down) intermall IC)
REG1 (29 pin)
This is the output pin for 5V linear regulator and also active in power supply for driver and control circuit of the inside. The
standby function for REG1 is determined by CTL pin. The voltage is 5V, with 100mA current ability. It is recommended that
a 10μF capacitor (X5R or X7R) be established between REG1 and GND.
REG2 (28 pin)
This is the output pin for 3.3V linear regulator. The standby function for REG2 is determined by CTL. The voltage is 3.3V,
with 100mA current ability. It is recommended that a 10μF capacitor (X5R or X7R) be established between REG2 and
GND.
REF (12 pin)
This is the setting pin for output voltage of switching regulator. This IC controls the voltage in the status of REFFB.
FB 1, 2 (14 pin, 11 pin)
This is the feedback pin from the output of switching regulator. This IC controls the voltage in the status of REFFB.
Vo1 (27 pin)
This is the output discharge pin, and output voltage feedback pin for frequency setting. When the voltage is beyond 4.4V
from the external power supply during operation, it supplies REG1.
Vo2 (7 pin)
This is the output discharge pin, and output voltage feedback pin for frequency setting.
SS1, 2 (19 pin, 6 pin)
This is the setting pin for soft start. The rising time is determined by the capacitor connected between SS and GND, and
the fixed current inside IC after it is the status of low in standby mode. It controls the output voltage till SS voltage catch up
the REF pin to become the SS terminal voltage.
FS1, 2 (15 pin, 10 pin)
This is the input pin for setting the frequency. It is available to set it in frequency range is 150kHz to 500kHz.
ILIM1, 2 (17 pin, 8 pin)
BD9528AMUV detects voltage differential between SW and PGND, and set OCP. OCP setting current value is determined
by the resistance value of ILIM pin. FET of various Ron is available.
PGOOD 1, 2 (20 pin, 5 pin)
This is the open drain pin for deciding the output of switching regulator.
MCTL1, 2 (18 pin, 16 pin)
This is the switching shift pin for SLLM (Simple Light Load Mode). MCTL pin is at low level when it goes lower than 0.8V,
and at high level when it goes higher than 2.3V.
(MCTL pin is connected to AGND pin with 500kΩ resistor(pull down) intermall IC)
AGND (13 pin)
This is the ground pin.
BOOT1, 2 (22 pin, 3 pin)
This is the power supply pin for high side FET driver. The maximum voltage range to GND pin is to 35V, to SW pin is to 7V.
In switching operations, the voltage swings from (VIN+REG1) to REG1 by BOOT pin operation.
HG1, 2 (23 pin, 2 pin)
This is the highside FET gate drive pin. It is operated in switching between BOOT to SW. In case the output MOS is 3ohm
/the status of Hi, 2ohm/the status of Low, it is operated hi-side FET gate in high speed.
SW1, 2 (24 pin, 1 pin)
This is the ground pin for high side FET drive. The maximum voltage range to GND pin is to 30V. Switching operation
swings from the status of BOOT to the status of GND.
LG1, 2 (26 pin, 31 pin)
This is the lowside FET gate drive pin. It is operated in switching between REG1 to PGND. In case the output MOS is
2ohm /the status of Hi, 0.5ohm/the status of Low, it is operated low-side FET gate in high speed.
PGND1, 2 (25 pin, 32 pin)
This is the ground pin for low side FET drive.
Technical Note
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BD9528AMUV
Explanation of Operation
The BD9528AMUV is a 2ch synchronous buck regulator controller incorporating ROHM’s proprietary H3REG CONTROLLA
control system. Because controlling of output voltage by a comparator, high response is realized with not relying on the
switching frequency. And, when VOUT drops due to a rapid load change, the system quickly restores VOUT by extending the
TON time interval. Thus, it serves to improve the regulator’s transient response. Activating the Light Load Mode will also
exercise Simple Light Load Mode (SLLM) control when the load is light, to further increase efficiency.
H3RegTM control
(Normal operation)
(VOUT drops due to a rapid load change)
(when VIN drops)
If VIN voltage drops because of the battery voltage fall, ontime tON and offtime tOFF is determined by the following formula:
tON=VOUT/VIN×I/f and tOFF=(VIN-VOUT)/VIN×f so that tON lengthen and tOFF shorten to keep output voltage constant.
However, if VIN still drops and tOFF equals to tminoff (tminoff:Minimum OFF time, regulated inside IC) , because tOFF
cannot shorten any more, as a result output voltage drops. In H3RegTM system, lengthening tON time than regulated tON
(lengthen tON time until FBREF) enables to operate stable not to drop the output voltage even if VIN turns to be low. With
the reason above, it is suitable for 2-cell battery.
FB
REF
HG
LG
HG output is determined by the formula above.
A
fter the status of HG is OFF, LG go on outputting until
output voltage become FB=REF.
When FB falls to a reference voltage (REF),
the drop is detected, activating the H3REG CONTROLL
A
system.<Route A>
REF
FB
HG
Io
LG
tON +α
When VOUT drops due to a rapid load change, and the
voltage remains below reference voltage after the
programmed tON time interval has elapsed (Output of a
comparator for output voltage control =H), the system
quickly restores VOUT by extending the tON time,
improving the transient response.<Route B> After VOU
T
restores (FB=REF), HG turns to be OFF, and it goes back
to a normal operation.
Internal
reference
voltage
REF
FB
Vout/Vin
Circuit
Transient
Circuit
Driver
HG
SW
LG
VIN
VOUT
Comparator for
output voltage control
A
B
HG
LG
FB
REF
VIN
tON1 tON2t
ON3t
ON4
tOFF1t
OFF2tOFF3tOFF4=tOFF3
tON4+α
tOFF4=tOFF3
H3RegTM
FB=REF
Output voltage drops
tON==VOUT
VIN
× 1
f [sec]・・・(1)
Technical Note
14/29
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BD9528AMUV
Light Load Control
(SLLM)
(QLLM)
MCTL1 MCTL2 Control mode Running
L L SLLM PWM
L H QLLM PWM
H X PWM PWM
Timing Chart
• Soft Start Function
In SLLM, when the status of LG is OFF and the coil current
is within 0A (it flows to SW from VOUT.), SLLM function is
operated to prevent output next HG. The status of HG is
ON, when FB falls below reference voltage again.
In QLLM, when the status of LG is OFF and the coil current
is within 0A (it flows to SW from VOUT.), QLLM function is
operated to prevent output next HG.
Then, FB falls below the output programmed voltage within
the programmed time (typ=40μs), the status of HG is ON.
In case FB doesn’t fall in the programmed time, the status
of LG is ON forcedly and VOUT falls. As a result, he status
of next HG is ON.
FB
REF
HG
LG
0
A
Load
COUT
*Attention: H
3
Reg
TM
CONTROLLA monitors the supplying current from
capacitor to load, using the ESR of output capacitor, and realize
the rapid response. Bypass capacitor used at each load (Ex.
Ceramic capacitor) exercises the effect with connecting to each
load side. Do not put a ceramic capacitor on COUT side o
f
power supply.
EN
SS
VOUT
IIN
Tss
Soft start time
TSS = REF×Css
2.3μA(typ)
[sec]
Incoming current
IIN = Co×VOUT
Tss
[A]
(Css: Soft start capacitor; Co: Output capacitor)
・・・(2)
・・・(3)
FB
HG
LG
0
A
The BD9528AMUV operates in PWM mode until SS pin
reaches cramp voltage (2.5V), regardless of the control
mode setting, in order to operate stable during the
operation.
Soft start is exercised with the EN pin set high. Current
control takes effect at startup, enabling a moderate
output voltage “ramping start.” Soft start timing and
incoming current are calculated with formulas (2) and
(3) below.
Technical Note
15/29
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BD9528AMUV
Notes when waking up with CTL pin or VIN pin
If EN pin is High or short (or pull up resistor) to REG1 pin, IC starts up by switching CTL pin, the IC might fail to start
up (SCP function) with the reason below, please be careful of SS pin and REF pin capacitor capacity.
CTL
(Vin)
EN
REG1(5V)
REG2(3.3V)
SCP_REF
SS
REF FB
FB
FB
FB
about 1.5V
SCP becomes valid from the point
SS reached 1.5V.
SCP invalid for
SS has not reached 1.5V.
SCP is valid here,
because this is SCP valid
area and also because FB
fall below SCP_REF.
SCP will be effective with
EN=ON at this section.
SW
Start up NG
EN
SW
Start up OK
SCP valid area
SCP is valid here,but with FB
exceeding SCP_REF it is normally
activate-able area.
SCP is effective at SCP_REF>FB condition.
SCP
SCP protection (function) activates when output shorts
and FB falls below the activation standard of SCP.
Inclination of REF is influenced
by the external condenser connected to REF.
※ To be accurate,Delay occurs after SCP activating.
But this shows the relationship of each signals briefly.
Delay SCP
PWM
(Switching control signal)
1ms(typ.)
SCP circuit
BG
SCP_REF
SCP
CTL
REF
SS
REG1 REG2 FB
Inner
reference
circuit
VIN
Technical Note
16/29
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BD9528AMUV
Output Discharge
It will be available to use if connecting VOUT pin to DC/DC output.
(Total about 100Ω) . Discharge function operates when EN=’L
UVLO=ON(If input voltage is low) SCP Latch time TSD=ON.
The function at output discharge time is shown as left.
(1)during EN=’H’→‘L’
If EN pin voltage is below than EN threshold voltage, output
discharge function is operated, and discharge output capacito
r
charge.
(2) during VIN=CTL=H0V
IC is in normal operation until REG1 voltage becomes lower than
UVLO voltage. However, because VIN voltage also becomes low,
output voltage will drop, too.
If REG1 voltage reaches the UVLO voltage, output discharge
function is operated, and discharge output capacitor charge.
In addition, if REG1 voltage drops, inner IC logic cannot operate, so
that output discharge function does not work, and becomes output
Hi-z. (In case, FB has resistor against GND, discharge at the
resistor.
VIN,CTL
EN
VOUT
The efficiency of
VIN voltage drop
Output Discharge
Output Hi-Z
VIN, CTL
REG1
VOUT
UVLO ON
Technical Note
17/29
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BD9528AMUV
Timer Latch Type Short Circuit Protection
Over Voltage Protection
Over current protection circuit
Short protection kicks in when output falls to or belo
w
REF X 0.7.
When the programmed time period elapses, output is
latched OFF to prevent destruction of the IC. (HG=Low,
LG=Low) Output voltage can be restored either b
y
reconnecting the EN pin or disabling UVLO.
FB
SCP
EN / UVLO
REF×0.7
0.75ms(typ)
FB
HG
LG
REF×1.2
Switching
When output rise to or above REF×1.2 (typ), output
over voltage protection is exercised, and low side FE
T
goes up maximum for reducing output.(LG=High,
HG=Low).When output falls, output voltage can be
restored., and go back to the normal operation.
During the normal operation, when FB becomes less
than REF, HG becomes High during the time tON, and
after HG becomes OFF, it output LG.
However, when inductor current exceeds ILIMIT
threshold, next HG pulse doesn’t pulsate until it is lowe
r
than ILIMIT level.
tON tON
HG
LG
IL
tON
tON
Technical Note
18/29
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BD9528AMUV
External Component Selection
1. Inductor (L) selection
Passing a current larger than the inductor’s rated current will cause magnetic saturation in the inductor and decrease
system efficiency. In selecting the inductor, be sure to allow enough margin to assure that peak current does not exceed
the inductor rated current value.
To minimize possible inductor damage and maximize efficiency, choose a inductor with a low (DCR, ACR) resistance.
2.Output Capacitor (CO) Selection
Please give due consideration to the conditions in formula (8) below for output capacity, bear in mind that output rise time
must be established within the soft start time frame. Capacitor for bypass capacitor is connected to Load side which
connect to output in output capacitor capacity (CEXT, figure above). Please set the soft start time or over current detecting
value, regarding these capacities.
Note: Improper capacitor may cause startup malfunctions.
3. Input Capacitor (Cin) Selection
A low ESR capacitor is recommended to reduce ESR loss and maximize efficiency.
The inductor value is a major influence on the output ripple current.
A
s formula (4) below indicates, the greater the inductor or the switching
frequency, the lower the ripple current.
IL=
(VIN-VOUT)×VOUT
L×VIN×f
[
A
]
・・・
(
4
)
The proper output ripple current setting is about 30% of maximum
out
p
ut current.
IL=0.3×IOUTmax. [A]・・・(5)
L=
(VIN-VOUT)×VOUT
IL×VIN×f
[
H
]
・・・
(
6
)
(IL: output ripple current; f: switch frequency)
Input Capacitor
Output ripple current
IL
VIN
IL
L
Co
VOUT
VIN
L Co
VOUT
Cin
When determining the proper output capacitor, be sure to factor in the equivalent
series resistance required to smooth out ripple volume and maintain a stable
output voltage range.
Output ripple voltage is determined as in formula (7) below.
VOUT=IL×ESR+ESL×⊿IL/TON・・・(7)
Co+CEXT TSS×(Limit-IOUT)
VOUT ・・・
(
8
)
Tss: Soft start time
Limit: Over current detection
VIN
L
Co
VOUT
ESR
Output Capacitor
ESL
Load
CEXT
(IL: Output ripple currentESR: CO equivalent series resistance
ESL: CO equivalent series inductance)
The input capacitor selected must have low enough ESR resistance to fully support
large ripple output, in order to prevent extreme over current. The formula for ripple
current IRMS is given in (9) below.
IRMS=IOUT×VIN
(
VIN-VOUT
)
VIN [A]・・・
(
9
)
Where VIN=2×VOUT,IRMS =
IOUT
2
In selecting a capacitor, make sure the capacitor rating allows sufficient margin
relative to output voltage. Note that a lower ESR can minimize output ripple voltage.
Technical Note
19/29
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BD9528AMUV
4. MOSFET Selection
5. Setting output voltage
This IC is operated that output voltage is REFFB.
And it is operated that output voltage is feed back to FB pin.
<Output Voltage>
Ex. VIN=20V,VOUT=5V,f=300kHz,L=2.5uH,ESR=20mΩ,R1=56kΩ,R2=9.1kΩ
IL =(20V-5V)×5V/(2.5×10-6H×20V×300×103Hz)=5[A]
VOUT=5A×20×10-3Ω=0.1[V]
V
OUT=0.7V×(56kΩ+9.1kΩ)/9.1kΩ+1/2×0.1V=5.057[V]
VIN
L
Co
VOUT
synchronous switch
main switch
VIN-VOUT
VIN
×RON×IOUT2+Ciss×f×VDD
=・・・(11)
Pmain=PRON+PGATE+PTRAN
Psyn=PRON+PGATE
Loss on the main MOSFET
(Ron: On-resistance of FET; Ciss: FET gate capacitance;
f: Switching frequency Crss: FET inverse transfer function;
IDRIVE: Gate peak current)
Loss on the synchronous MOSFET
・・・(10)
VOUT
VIN
×RON×IOUT2+Ciss×f×VDD+ VIN2×Crss×IOUT×f
IDRIVE
=
MOSFET may cause the loss as below, so please select proper FET for each.
(VOUT: Output ripple voltage)
(Notice) Please set FB more than 10mV
Output voltage
REF
FB
H
3
REG
CONTROLLA
S
RQ SLLM
Driver
Circuit
SLLM
VIN VIN
R1
R2
(IL: ripple current of coil)
(L: inductance[H] f: switching frequency[Hz])
VOUT =IL×ESR
IL =( VIN - VOUT)× VOUT
(
L×VIN×f
)
VOUT = ×REF(0.7V)+ VOUT
(R1+R2)
R2
1
2
IL =(20V-5V)× =5(A)
5V
(
2.5×10-6H×20V×300×103Hz
)
VOUT =5A×20×10-3Ω=0.1(V)
VOUT =0.7V× + ×0.1V=5.057(V)
1
2
(51kΩ+ 9.1kΩ)
9.1kΩ
Technical Note
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BD9528AMUV
6. Setting over current protection
(Example)
If load current 5A want to be realized with VIN=619VVOUT=5Vf=400HZL=2.5uHRON=20mΩ, the formula would
be below.
When VIN=6V, Iocp will be minimum(this is because the ripple current is also minimum) so that if each condition is input,
the formula will be the following: RILIM109.1[kΩ].
To design the actual board, please consider enough margin for FET ON resistor dispersion, Coil inductor dispersion, IC
over current reference value dispersion, frequency dispersion.
7. Relation between output voltage and TON time
The BD9528AMUV, both 1ch and 2ch, are high efficiency synchronous regulator controller with frequency variable.
TON time varies with Input voltage [VIN], output voltage [VOUT], and RFS of FS pin resistance.
TON time is calculated with the following formula:
Ton =k
From TON time above, frequency on application condition is following:
Frequency =
However, real-life considerations (such as the external MOSFET gate capacitor and switching speed) must be factored in
as they affect the overall switching rise and fall time, so please confirm in reality by the instrument.
RFS ontime(VOUT=5V) RFS ontime(VOUT=3.3V) RFS – ontime(VOUT=1V)
Detecting the ON resistance (between SW and PGND voltage) of MOSFET a
t
low side, it set the over current voltage protection.
Over current reference voltage (ILIM_ref) is determined as in formula(12) below.
10k
RILIM[kΩ] ×RON[mΩ]
ILIM_ref=
(RILIM: Resistance for setting of over current voltage protection value[kΩ]
RON: Low side ON resistance value of FET[mΩ])
[A]・・・(12)
[nsec]・・・(14)
VOUT
VIN ×1
Ton [kHz]・・・(15)
0
0.5
1
1.5
2
2.5
0 20 40 60 80 100 120
RFS[kΩ]
ontime[us]
VIN=7V
VIN=12V
VIN=21V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 20 40 60 80 100 120
RFS[kΩ]
ontime[us]
VIN=7V
VIN=12V
VIN=21V
0
0.5
1
1.5
2
2.5
3
3.5
0 20 40 60 80 100 120
RFS[kΩ]
ontime[us]
VIN=7V
VIN=12V
VIN=21V
VOUTRFS
VIN
However, the value, which set the over current protection actually, is
determined by the formula (13) below.
ILIM_ref +
Iocp=IL
1
2
ILIM_ref +
=×
1
2
I
f
VIN - Vo
L
×Vo
VIN
× ・・・(13)
VIN
L
Co
VOUT
PGND
SW
RILIM
Coil current
Iocp
ILIM_re
f
(IL:Coil ripple current[A]VIN:Input voltage[V]Vo:Output voltage [V]
f:Switching frequency [HZ]L:Coil inductance [H])
10k
RILIM[kΩ] ×RON[mΩ]
Iocp=+ ×
1
2
I
f
VIN - Vo
L
×Vo
VIN
× 5
Technical Note
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BD9528AMUV
8. Relation between output voltage and frequency
Because the BD9528AMUV is TON time focused regulator controller, if output current is up, switching loss of Coil,
MOSFET and output capacitor will increase, and frequency will be fast.
Loss of each Coil, MOSFET and output capacitor are below.
Regarding those loss above and frequency formula, it is determined below.
However, real-life considerations (such as parasitic resistance element of Layout pattern) must be factored in as they
affect the loss, please confirm in reality by the instrument.
VOUT
VIN
Coil loss = IOUT2 × DCR
MOSFET(High Side) loss = IOUT2 × Ronh ×
VIN
MOSFET(Low Side) loss = IOUT2 × RonL × (1- VOUT )
VIN × IOUT × Ton
VOUT × IOUT + + +
T (=1/Freq) = ・・・(17)
(Ronh : ON resistance of high side MOSFET, Ronl : ON resistance of low side MOSFET,
ESR : Output capacitor equivalent cascade resistance)
Technical Note
22/29
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BD9528AMUV
I/O Equivalent Circuit
1, 24pin (SW2, SW1) 2, 23pin (HG2, HG1) 3, 22pin (BOOT2, BOOT1)
4, 21pin (EN2, EN1) 5, 20pin (PGOOD2, PGOOD1) 6, 19pin (SS2, SS1)
12pin (REF) 11, 14pin (FB2, FB1) 10, 15pin (FS2, FS1)
16, 18pin (MCTL2, MCTL 1) 9pin (CTL) 26, 31pin (LG1, LG2)
BOOT BOOT
SW
REG1
HG
SW
REG1
HG
BOOT
REG1
VIN
Technical Note
23/29
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BD9528AMUV
I/O Equivalent Circuit
7, 27pin (Vo2, Vo1) 28pin (REG2) 29pin (REG1)
30pin (VIN) 8, 17pin (ILIM2, ILIM1)
REG1 VIN VIN
Technical Note
24/29
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BD9528AMUV
Evaluation Board Circuit (Vo1=5V/8A, f1=300kHz Vo2=3.3V/8A f2=300kHz)
DESIGNATION RATING PART No. COMPANY DESIGNATION RATING PART No. COMPANY
R1 0Ω - - C4 0.1uF(6.3V) GRM21BB10J104KD MURATA
R5 68kΩ MCR03 ROHM C5 2200pF GRM188B11H102KD MURATA
R6 68kΩ MCR03 ROHM C6 2200pF GRM188B11H102KD MURATA
R7 75kΩ MCR03 ROHM C7 0.47uF GRM188B11A474KD MURATA
R8 75kΩ MCR03 ROHM C8 0.47uF GRM188B11A474KD MURATA
R9 0Ω - - C9 10uF(25V) GRM31CB31E106KA75 MURATA
R10 0Ω - - C12 10uF(25V) GRM31CB31E106KA75 MURATA
R11 0Ω - - C14 330uF 6TPE330MI SANYO
R12 0Ω - - C18 330uF 6TPE330MI SANYO
R13 0Ω - - C30 1000pF GRM1882C1H102JA01 MURATA
R14 0Ω - - C31 1000pF GRM1882C1H102JA01 MURATA
R15 100kΩ MCR03 ROHM (D1) (Diode) (RSX501L-20) (ROHM)
R16 100kΩ MCR03 ROHM (D2) (Diode) (RSX501L-20) (ROHM)
R17 56kΩ MCR03 ROHM L1 2.2uH FDVE1040-2R2M TOKO
R18 9.1kΩ MCR03 ROHM L2 2.2uH FDVE1040-2R2M TOKO
R19 30kΩ MCR03 ROHM Q1 FET RMW130N03 ROHM
R20 8.2kΩ MCR03 ROHM Q2 FET RMW130N03 ROHM
C1 10uF(25V) GRM31CB31E106KA75 MURATA Q3 FET RMW130N03 ROHM
C2 10uF(10V) GRM21BB10J106KD MURATA Q4 FET RMW130N03 ROHM
C3 10uF(6.3V) GRM21BB10J106KD MURATA U1 - BD9528AMUV ROHM
note) Without any value of ripple(about 10mV), there is a possibility of FB signal not acting stable switching due to the
adoption of comparator control method. Please use in condition with enough ripple voltage either by reducing the
L-value of coil, or using big output capacitor of ESR. Ripple voltage can be generated in FB terminal by adding
capacitor in parallel to resistor (R17, R19) of FB terminal, but because it becomes delicate to noise from output
(Vo1/Vo2) line it is not recommended. Also condition of stable action gets effected by layout of board, etc., so please
give full attention.
VIN
CTL
EN1
EN2
REG1
REG2
REF
SS1
FS1
BOOT1
HG1
SW1
LG1
PGND1
FB1
BOOT2
HG2
SW2
LG2
PGND2
VIN
12V
C1
CTL
EN1
EN2
CTL
EN1
EN2
VIN
REG1
REG1
REG1
5V
REG2
3.3
V
C2
C3
C4
C5 C6
Q3
Q4
VIN VIN
C12
SW2
D2
Q1
Q2
C7
VIN VIN
C9
SW1
D1
30
9
21
4
29
28
12
19
6
15
22
23
24
26
25
14
3
2
1
31
32
BD9528AMUV
R1
R12
R13
R14
R10
R9
R11
L2
R19
VO2
C18
L1
R17
VO1
C14
FS2
10
MCTL1
A
GND
FB2
PGOOD1
PGOOD2
C8
REG1
REG1 PGOOD2
PGOOD1
18
13
MCTL1
11
20
5
R15
R16
SS2
Vo1
Vo2
ILIM2
8
ILIM1
17
27
7
R5
R6
R7
R8
R20
R18
MCTL2
MCTL2
16
Power Ground
A
nalog Ground
C30
C31
Technical Note
25/29
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BD9528AMUV
Handling method of unused pin during using only DC/DC 1ch
If using only 1ch DC/DC and 2ch pin is set to be off at all times, please manage the unused pin as diagram below.
PIN No, PIN name Management
1 SW2 GND
2 HG2 Open
3 BOOT2 Open
4 EN2 GND
5 PGOOD2 GND
6 SS2 GND
7 Vo2 GND
8 ILIM2 GND
10 FS2 GND
11 FB2 GND
31 LG2 Open
VIN
CTL
EN1
EN2
REG1
REG2
REF
SS1
FS1
BOOT1
HG1
SW1
LG1
PGND1
FB1
BOOT2
HG2
SW2
LG2
PGND2
VIN
12V
C1
CTL
EN1
CTL
EN1
VIN
REG1
REG1
5V
REG2
3.3
V
C2
C3
C4
C5
Q1
Q2
C7
VIN VIN
C9 C10
SW1
D1
30
9
21
4
29
28
12
19
6
15
22
23
24
26
25
14
3
2
1
32
BD9528AMUV
R1
R10
R9
R11
L1
R17
VO1
C14
FS2
10
MCTL1
A
GND
FB2
PGOOD1
PGOOD2
REG1 PGOOD1
18
13
MCTL1
11
20
5
R15
SS2
Vo1
Vo2
ILIM2
8
ILIM1
17
27
7
R5
R7
R18
MCTL2
MCTL2
16
Technical Note
26/29
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BD9528AMUV
Example of PCB layout
SW2
HG2
BOOT2
EN2
PGOOD2
SS2
Vo2
ILIM2
CTL
FS2
FB2
REF
AGND
FB1
FS1
MCTL2
ILMI1
MCTL1
SS1
PGOOD1
EN1
BOOT1
SW1
PGND1
LG1
Vo1
REG2
REG1
VIN
LG2
PGND2
HG1
L-FET
(CH2)
Vo2
Vo1
L-FET
(CH1)
L
L
Co
Co
Cin
Cin
R
C
C
R
R
R
R
R
R
C
C
C
High current GND
High current GND
‘Silent’GND
‘Silent’GND
H-FET
(CH2)
VIN
H-FET
(CH1)
Because high pulse current rush into power loop, consisted of input capacitor Cin, output inductor L and output
capacitor Co, this part layout should be built at parts side (upper side) including GND pattern.
Also, drawing via formation in power loop line should be avoided.
(The reason is that it will be a factor of noise because via oneself holds some nH parasitic inductance)
FB pin has comparatively high impedance, so floating capacity should be minimum as possible.
And feedback wiring from output should be taken properly, and shielding, not going through around L (because of
magnetic). Please be careful in drawing.
Trace from SW node pin to inductor should be cut short. And both inductor element pattern should be kept away.
(Closer wiring has SW node noise influence Vo by parasitic capacity between wiring). This layout example shows that
SW node is outside, but if the application board will be like that, SW node should be shielded.
Please consider the influence to other circuit.
Input capacitor Cin should be placed close to IC with low inductance.
If that is difficult, please place a capacitor for high frequency removal with PKG size small like 0.1uF (ESL small).
2nd layer and 3rd layer are plain GND, so connect from parts side GND to plain GND by low impedance with many via as
possible. Inner GND is only for shielding, so that no to form loop for high current.
Please take GND pattern space widely, and design layout to be able to increase radiation efficiency.
FS pin and ILIM pin has high impedance. External resistor should be connected to “Silent GND”.
Technical Note
27/29
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BD9528AMUV
Operation Notes and Precautions
1. This integrated circuit is a monolithic IC, which (as shown in the figure below), has P+ isolation in the P substrate and
between the various pins. A P-N junction is formed from this P layer and N layer of each pin, with the type of junction
depending on the relation between each potential, as follows:
When GND element A element B, the P-N junction is a diode.
When element BGND element A, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, as well as operating malfunctions and physical damage. Therefore, be careful to avoid
methods by which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an
input pin.
2. In some modes of operation, power supply voltage and pin voltage are reversed, giving rise to possible internal circuit
damage. For example, when the external capacitor is charged, the electric charge can cause a VCC short circuit to the
GND. In order to avoid these problems, inserting a VCC series countercurrent prevention diode or bypass diode
between the various pins and the VCC is recommended.
3. Absolute maximum rating
Although the quality of this IC is rigorously controlled, the IC may be destroyed when applied voltage or operating
temperature exceeds its absolute maximum rating. Because short mode or open mode cannot be specified when the IC
is destroyed, it is important to take physical safety measures such as fusing if a special mode in excess of absolute
rating limits is to be implemented.
4. GND potential
Make sure the potential for the GND pin is always kept lower than the potentials of all other pins, regardless of the
operating mode.
5. Thermal design
In order to build sufficient margin into the thermal design, give proper consideration to the allowable loss (Power
Dissipation) in actual operation.
6. Short-circuits between pins and incorrect mounting position
When mounting the IC onto the circuit board, be extremely careful about the orientation and position of the IC. The IC
may be destroyed if it is incorrectly positioned for mounting. Do not short-circuit between any output pin and supply pin
or ground, or between the output pins themselves. Accidental attachment of small objects on these pins will cause
shorts and may damage the IC.
7. Operation in strong electromagnetic fields
Use in strong electromagnetic fields may cause malfunctions. Use extreme caution with electromagnetic fields.
8. Thermal shutdown circuit
This IC is provided with a built-in thermal shutdown (TSD) circuit, which is activated when the operating temperature
reaches 175 (standard value), and has a hysteresis range of -15 (standard value). When the IC chip temperature
rises to the threshold, all the inputs automatically turn OFF. Note that the TSD circuit is provided for the exclusive
purpose shutting down the IC in the presence of extreme heat, and is not designed to protect the IC per se or guarantee
performance when or after extreme heat conditions occur. Therefore, do not operate the IC with the expectation of
continued use or subsequent operation once the TSD is activated.
Resistor Transistor (NPN)
N
N
N P+ P+
P
P substrate
GND
Parasitic element
Pin A
N
N P+ P+
P
P substrate
GND
Parasitic element
Pin B C B
E
N
GND
Pin A
P
aras
iti
c
element
Pin B
Other adjacent elements
E
B C
GND
P
aras
iti
c
element
VCC
Pin
Counter current prevention diode
Bypass diode
Technical Note
28/29
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BD9528AMUV
9. Capacitor between output and GND
When a larger capacitor is connected between the output and GND, Vcc or VIN shorted with the GND or 0V line – for
any reason – may cause the charged capacitor current to flow to the output, possibly destroying the IC. Do not connect
a capacitor larger than 1000uF between the output and GND.
10. Precautions for board inspection
Connecting low-impedance capacitors to run inspections with the board may produce stress on the IC. Therefore, be
certain to use proper discharge procedure before each process of the operation. To prevent electrostatic accumulation
and discharge in the assembly process, thoroughly ground yourself and any equipment that could sustain ESD damage,
and continue observing ESD-prevention procedures in all handling, transfer and storage operations. Before attempting
to connect components to the test setup, make certain that the power supply is OFF. Likewise, be sure the power supply
is OFF before removing any component connected to the test setup.
11. GND wiring pattern
When both a small-signal GND and high current GND are present, single-point grounding (at the set standard point) is
recommended, in order to separate the small-signal and high current patterns, and to be sure the voltage change
stemming from the wiring resistance and high current does not cause any voltage change in the small-signal GND. In
the same way, care must be taken to avoid wiring pattern fluctuations in any connected external component GND.
Heat Dissipation Characteristics
Ambient Temperature [Ta]
Power Dissipation [Pd]
150125100755025 0
200
400
600
800
1000
[]
[mW]
880mW
380mW
74.2mm×74.2mm×1.6mm Glass-epoxy PCB
θj-a=142.0/W
IC Only θj-a=328.9/W
Technical Note
29/29
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A
© 2011 ROHM Co., Ltd. All rights reserved.
BD9528AMUV
Ordering Part Number
B D 9 5 2 8 A MU V -E 2
Package
MUV : VQFN032V5050
Packaging and forming specification
E2: Embossed tape and reel
(Unit : mm)
VQFN032V5050
0.08 S
S
1.0MAX
(0.22)
0.02+0.03
-
0.02
24
81
9
32
16
25 17
0.5
0.75
0.4±0.1
3.4±0.1
3.4±0.1
0.25 +0.05
-
0.04
C0.2
5.0±0.1
5.0±0.1
1PIN MARK
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
Direction of feed
Reel 1pin
R1120
A
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"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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