electronics inc. bs ra < | O WI 7 62 HERMETICALLY SEALED GLASS PACKAGED TUNING DIODES ELECTRICAL CHARACTERISTICS (Ta= 25 C unless otherwise noted) ABRUPT and HYPERABRUPT APPLICATIONS FOR USE TO 2.5 GHz VERY HIGH 0 PREDICTABLE TRACKING Diede Cap. (CTI RATIO ne RATIO ase AATIO oO TYPE YPE ae tye RATIO ase RATIO ase Eton @ 4/1 MHZ No C2/C20 50 MHz ed 2/020 50 Mz TyPE Coty 50 MHz cziea sO Mi: wo CaiC2s 50 MHz oF minty moin/man min No minhtyp ma wo. minityp min . minftyp pF 18 SQI2N3A 2.2/2.7 1500 eo 22 GMA 1.7/2.2 700 SQIZ14A = 2.3/2.8 1400 sare = 2.2726 = 1400 22 2? SOIZ15A 2.4/2.8 1300 $oi7s = 2.3/2.7 = 1300 2 33 COA 1.9/2.2 600 SOIZ16A = 2.5/3.0 1200 sare? = 2.4/2.8 = 1200 a 39 GOA 1.8/2.4 600 SQi2t7A 2.5/3.0 1100 $ai71?) 24/28 = 1100 19 a7 SQ1218A = 2.5/3.0 1000 sare = 25/29 1000 a 56 GEOSA 1.8/2.4 600 SQI219A = 2.6/3.1 1000 soi7ig = 25/23 1000 - 68 Mevieze = 2.0/2.5 300 GOA 19/24 600 $01220A 2.7/3.1 1000 soi = 2.7/3.1 1000 Sa 82 Mvie2 = (2.0/2.5 300 $01722A 2.9/3.2 1000 savvz2 2.8/3.2 1000 2 19.0 Mvi6m = 2.0/2.5 300 Gea = 19/24 600 $01226A = 2.9/3.2 1000 sare = 2.8/3.1 1000 100 12.0 Mvie76 = 2.0/2.5 300 $0122%6A 2.9/3.2 900 $ai726 = (2.8/3.1 900 120 15.0 wviems 2.0/2.5 20 GErSA = 2.0/2.5 600 $01228A 2.9/3.2 900 $ai72e (2.8/3.1 900 wvexe 1.8/2.0 30 150 "0 mviss = (2.0/2.6 250 SQ12%A = -29/3.2 800 $017300 2.9/3.1 900 mvest 1.8/2.0 5 ao 20.0 mvies2 2.0/2.6 250 SQ1232A 2.9/3.2 800 $a17320 2.9/3.1 800 200 220 wvtes = 2.0/2.6 250 6s22a 2.0/2 500 SQ1234A 3.0/3.3 800 so173a = 2.9/3.2 800 mves2 1.8/2.1 2s 20 270 mvis36 = 20/26 200 S012%A = 3.0/3.3 800 $Q1736 2.9/3.2 900 Mve33 1.8/2.1 % 210 130 mvie3s = (2.0/2.6 200 SQ1238A = 3.0/3.3 700 $ai73s 2.9/3.2 700 mvaxe 1.9/2.2 2 330 39.0 vies = 2.0/2.6 20 sai = 2.9/3.2 600 wva3ss 1.9/2.2 2 Ti 470 myies2 = 2.0/2.7 200 saiez 2.9/3.2 soo mvexs 1.9/2.2 15 ao 560 mavisee = 2.0/2.7 150 saime = 2.9/3.2 450 mves7 1.9/2.2 5 56.0 680 mviess (2.0/2.7 150 sais = 2.9/3.2 300 mveza 2.0/2.2 15 680 02.0 visas = (2.0/2.7 150 savas 2.9/3.2 300 Mave 2.0/2.2 10 azo 100.0 mviEse 2.0/2.7 150 sar7sa 2.9/3.2 300 mveso 2.0/2.2 10 | sap0 VR lenin) 20 Vdc @ 1R @ 10 wad 25 Vde @ in = WWuAde 10 Vde @ tA = 10 wAde 30 Vac @ IR = 10 vAde 30 Vde @ IR 10 uAde WhO? wAde VR - 25 Vde D.02uAdc @VR 25 Vie IA (max 1 -20 . max Ol uAde @ VA - 15 Vee 0.5 uAde @ VR - 20 Vac 0 uAde Ta - 180C 20 wade @ Ta 160 0.2 Ade @ VR - 28 Vee Tce! 300 ppm/ot 300 apm PC 300 ppm/C 300 ppm/C 300 ppm/t Case oot 00-35 Muvature 00 7 007 007 158 20 VOLTS pus GENERAL SPECIFICATIONS =" TYPE RATIO3 ae no crc OM (25 C unless noted) typ mn 120.0 | mv16s2 26 250 RATING SYMBOL VALUE Diede Cap, | S22 | MYIESS 26 250 Reverse Vottage va As SPECIFIED tens | WOOO | Mvtess 26 200 Junction Temperature Ti 717596 Max vi Mitr 200.0 | Mvr6se 26 200 Storage Temperature Tstg -65C to 200C 220.0 | wvises 26 150 - m Linear Power Derating 4mWPce ai 250.0 | wv1s623 24 150 00-35] MIN007]| 00-7 | DO14 y 2700 | wviee 23 100 330.0 | mvtees3 23 100 Oevice Dissipation (mW Max) Po 400 250 id 500 ~ Case Capacitance (pf Typ) cc 0.10 0.18 a2 03 VA. (me) 20 Vac @ (R= 10 wAde MV 1852/60 Series Inductance (ahy Typ) | LS 15 30 5.0 58 15 Ve @ tp = 10 vAde MVTSEZ/66 ' ( ) 0.1 uAde @ VA = 15 Vide MV1652/60 Ro (men 8.1 wade @ VR - 10 Vee MV1662/66 Tee 300 pom po PACKAGE CHARACTERISTICS =) ~ For other types not listed CATHODE Case oo-14 wa N here, please contact your "Total Ovode Capacitance measured at 1 MHz and VA speerfied. To order devices with CT Nom+ 5.0% of 2.0% add Suffix B or C respectevely. {1) Copacrtunee Temperature Coefficient (typ) @ 4V/1 MHz (2) For SQ17t6, C4 = J pt. nom. (3) Tuning fiero @ C2/C15 for MVIBE2/56. VAL U MANUFACTURED BY , 7 i CD _ & | |v --- M Ee mM lo 00-35 Min 00-7 00.7 00-14 OM | Min | Max | Min | Max | Mie | Max Mie | Max 480} 0.150 | 0.176 0.300 0.300 | mM | 1.00 1.000 1.000 1,000 W | O.ors | 0.021 | 0.014 | O.OtE | 0.019 | 0.021 | 0.019 | 0.021 0 O75 | 085 | 0.068 | 0.076 | 0.092 | 0.104 | 0.108 | 0.140 All dimenseons in inches, to convert to millimeters, multiply by 25.4 electronics snc. representative or the factory with your requirements.