Standard Power MOSFETs 2N6790 File Number 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE Toston) = 0.8Q . 5 Features: m SOA is power-dissipation limited a Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance 6O @ Majority varrier device $s 92CS -33741 TERMINAL DIAGRAM The 2N6790 is an n-channel enhancement-mode silicon- gate power MOS field-effect transistor designed for appli- cations such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipo- TERMINAL DESIGNATION lar switching transistors requiring high speed and low gate- drive power. This type can be operated directly from an integrated circuit. SOURCE The 2N6790 is supplied in the JEDEC TO-205AF metal package. DRAIN (CASE) JEDEC TO-205AF MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): DRAIN-SOURCE VOLTAGE, Voss ....--6 0.0: cece ec cec ence ete eeeeeennenees Dennen ee eee eee teen eect ee eeeee 200V *DRAIN-GATE VOLTAGE, (Res = 20 KQ), Vogr .... 6.6 cece eee ce ce een eee e nent ete ee eee ea ener eee eneetennenes 200V *GATE-SOURCE VOLTAGE, Ves 0.0.0.0. c ccc e tee e rence enn tence cnet tee bbe u ence beeen betes eebbenncues +20V DRAIN CURRENT: RMS Continuous, Ip At TC = 25C occ cc cee ee ee enn enn n ee nn Eee nee EEE eee neta beeen eye tebteteeeeneeneeees 3.5A At To = 100C occ cece cee nee e nen eee teen ent ene e eee eee ete b teste e ee eeeenaees 2.25A Pulsed, lom 2.0.6.0. c cee cence nce e cence eee e tee tneteteeteneeeees Deen eee renee renner ee eee tent en enee 14A *SOURCE CURRENT: Continuous, Is 00.0... ccc ccc ee ene nent nsec bene een tneneeeetnnae eee b eee e eee eee nnnee 3.5A Pulsed, Isao... occ cece ccc een e eee enter eect teteseennen Wee eee eee tenet nee este eee eee 14A *POWER DISSIPATION, Pr At Te = 25C ccc cee ee ene e ene nee ene b te ces e tenet eee vn en seenntaeeeasuseeuarnnes 20W Above To = 25C occ ec cece een ee nee enn etn e teeter eet tate ete tneeeeees Derate Linearly 0.16 W/G INDUCTIVE CURRENT, Clamped (L = 100uH), lim... 2... 2c ccc eee c ence eee c eee ena ce cee ensesceceeneeesnneees 144 OPERATING AND STORAGE TEMPERATURE, Ti, Tstg .-. 0. . ccc c ccc ce ccc ecceteccerevucecceeuceteeaees -55 to +150C *LEAD TEMPERATURE, TL: At distances 0.063 in. (1.6 mm) from seating plane for 10s Max. ......... 00. e cece cece nce cee ceeuseeateceuces 300 C in accordance with JEDEC registration data. 3-524Standard Power MOSFETs 2N6790 Electrical Characteristics @ Ti; = 25C (Untess Otherwise Specified) See Fig. 10 See Fig. 15 (MOSFET switching times are essentially independent of operating temperature.) Thermal Resistance Hae Junction-to-Case 7 .- | [82 [-cw] | Rinsa _ Junction-to-Ambient [ -. [ ~ | 1% [ecrw | Free Air Operation } Source-Drain Diode Switching Characteristics (Typical) tr Reverse Recovery Time 350 L178 _| Ty = 150C, ip = 35A, dipidt = 100Aius QpR Reverse Recovered Charge x) | #C [Ty = 190C, ip = 35A, dipict = 100Alus ton Forward Turn-on Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp. *JEDEC registered value aPulse Test: Pulse width = 300us, Duty Cycle = 2%. 80 us PULSE TEST Vos >!pion) * Rosion} max Ty= 1260C too Ty = 2800 1 1 Ty= -55C Ip. DRAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) Q 25 50 75 100 0 2 4 6 8 10 Vos. ORAIN-TO-SGURCE VOLTAGE (VOLTS) Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characteristics. 3-525Standard Power MOSFETs 2N6790 80 pas PULSE TEST OPERATION IN THIS AREA 20 (S LIMITED BY nw > OBIT Te = 25C Ty = 150C MAX. o7 eb Rene = 6.25 KW PULSE Ip, ORAIN CURRENT (AMPERES) Ip, ORAIN CURRENT {AMPERES) 0.4 0.08 0 2 4 5 8 10 10 2~~S 7 80 200 500 , Vps. ORAIN.TO-SOURCE VOLTAGE (VOLTS) Vos DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum safe operating area. = 6 S o 2 nm L lath 94 pe 12 S 2 & 1, DUTY FACTOR, 0 = 7 . 2 8 SINGLE PULSE (TRANSIENT 2. PEA UNIT BASE = Rinyc * 6.25 DEG. C/W. on THERMAL INPEOANCE) 3. Ta -To* Pom Zinacith 0S 2 5 w4 2 5 yd 2 5 we 2 5 wl 2 5 10 2 5 ty, SQUARE WAVE PULSE DURATION (SECONDS) Zensclt Apna, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) Fig. 5 - Maximum effective transient thermal impedance, junction-to-case versus pulse duration. 00 is PULSE TEST 2 Vas >lDton) * Roston) max 3 ~ wn Ty 150C S cn js. TRANSCONDUCTANCE (SIEMENS) ow log. REVERSE DRAIN CURRENT (AMPERES) Ty 2690 a 2 6 a 10 2 4 6 1 2 i in. DRAIN CURRENT (AMPERES! Vgp. SOURCE-T0-DRAIN VOLTAGE (VOLTS) Fig. 6 - Typical transconductance versus drain current. Fig. 7 - Typical source-drain diode forward voltage. 3-526Standard Power MOSFETs BVpsg. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) -40 o 40 80 160 Ty, JUNCTION TEMPERATURE (9C} Fig. 8 - Breakdown voltage versus temperature. 1000 Ves <0 | fal 800 t Cigg = Coy + Cog, Cyg SHORTED Cres = Cog Cos Cou | 1 : Coss ~ Cas* Teta 600 SS aR Cau * Ugg f+ - Css 400 Se eed -} 200 = C, CAPACITANCE {pth Coss Qo 10 20 30 40 $0 Vos. ORAIN TO-SOURCE VOLTAGE (VOLTS) Fig. 10 - Typical capacitance versus drain-to-source voltage. 1S 3 z = 2 3 z Vgs = av B g 10 = z S ws @ 2 2 |_| ee Z = 20V 2 Lt Vas = 20 Zz 05 < = 3 3 g Roston) MEASUREO WITH CURRENT PULSE OF = 2.0'us DURATION. INITIAL Ty = 259C. (HEATING EFFECT OF 2.0 ys PULSE (S MINIMAL} L 1 1 L L o 5 10 18 20 ig, ORAIN CURRENT (AMPERES) Fig. 12 - Typical on-resistance versus drain current. 2N6790 Ves* ip = 2A Apion). ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 40 G 40 60 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 9 - Typical normalized on-resistance versus temperature. Vps = 40V Vos * Vos = 160V. Vgg, GATE-TO-SOURCE VOLTAGE {VOLTS} o 4 & 12 16 20 Oy, TOTAL GATE CHARGE (nC) Fig. 11 - Typical gate charge versus gate-to-source voltage. Ip, DRAIN CURRENT (AMPERES) o 25 $0 15 100 125 150 Tc, CASE TEMPERATURE {C} Fig. 13 - Maximum drain current versus case temperature. 3-527Standard Power MOSFETs 2N6790 Pp, POWER DISSIPATION (WATTS) e a an Q 20 40 60 80 106 120 140 Tg, CASE TEMPERATURE (C) Fig. 14 - Power versus temperature derating curve. }e-- PULSE WIOTH V6S(on) +10V INPUT 50% Ar 90% 10% Vesiott OV INPUT PULSE INPUT PULSE RISE TIME Vos(ott) ana TEKTRONIX ouTPUT PULSE yes Voston} GEN. " NOTES: WHEN MEASURING RISE TIME, Vegjeq) SHALL BE AS SPECIFIED ON THE INPUT WAVEFORM, WHEN MEASURING FALL TIME, Vggiof) SHALL BE SPECIFIED ON THE INPUT WAVEFORM. THE INPUT TRANSITION AND DRAIN VOLTAGE RE- SPONSE DETECTOR SHALL HAVE RISE AND FALL RESPONSE TIMES SUCH THAT NOTES: DOUBLING THESE RESPONSES WILL NOT AFFECT THE RESULTS GREATER 1, LHOO63 CASE GROUNDED. THAN THE PRECISION OF MEASUREMENT. THE CURRENT SHALL BE SUFFI. 2. GROUNDED CONNECTIONS COMMON TO GROUND PLANE ON BOARD. CIENTLY SMALL SO THAT DOUBLING IT DOES NOT AFFECT TESTS RESULTS 3, PULSE WIDTH =3 us, PERIOD=1 ms, AMPLITUDE=10V, GREATER THAN THE PRECISION OF MEASUREMENT. Fig. 15 - Switching time test circuit. BLOCKING QIODE ag NOTES: . SET Vog TO THE VALUE SPECIFIED UNDER DETAILS USING A 0.13 PULSE WIOTH WITH A MINIMUM OF 1 MINUTE BETWEEN PULSES. INCREASE Ves UNTIL THE SPECIFIED VALUE OF (9 AND Vg ARE OBTAINED. CASE TEMPERATURE = 26C. + 2. SELECT Ag SUCH THAT Ip eis = 2.5 # 1.0 Vac. Fig. 16 - Safe operating area test circuit. 3-528High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65