A-Data ADS6632A4A
Synchronous DRAM 512K x 32 Bit x 4 Banks
General Description
The ADS6632A4A are four-bank Synchronous
DRAMs organized as 524,288 words x 32 bits x 4
banks,
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clock cycle.
Range of operating frequencies, programmable
burst length and programmable latencies allow the
same device to be useful for a variety of high
bandwidth high performance memory system
applications
Features
JEDEC standard LVTTL 3.3V power supply
MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,3,8,& full page)
-Burst Type (sequential & Interleave)
4 banks operation
A
ll inputs are sampled at the positive edge of
the system clock
Burst Read single write operation
Auto & Self refresh
4096 refresh cycle
DQM for masking
Package:86-pins 400 mil TSOP-Type II
Ordering Information.
Part No. Frequency Interface Package
ADS6632A4A-5 200Mhz LVTTL 400mil 86pin TSOPII
ADS6632A4A-5.5 183Mhz LVTTL 400mil 86pin TSOPII
ADS6632A4A-6 166Mhz LVTTL 400mil 86pin TSOPII
Pin Assignment
1
2
3
4
5
6
7
8
9
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
8
6
8
5
8
4
8
3
8
2
8
1
8
0
7
9
7
8
6
6
6
5
6
4
6
3
6
2
6
1
6
0
5
9
5
8
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
1
0
1
1
1
2
1
3
1
4
1
5
1
6
1
7
1
8
1
9
2
0
DQ5
DQ6
V
SSQ
DQ7
NC
V
DD
DQM0
WE
CA S
RA S
CS
7
7
7
6
7
5
7
4
7
3
7
2
7
1
7
0
6
9
6
8
6
7
DQ10
DQ9
V
DDQ
DQ8
NC
V
SS
DQM1
NC
NC
CLK
CKE
NC
DQ31
V
DDQ
DQ30
DQ29
V
SSQ
DQ28
DQ27
V
DDQ
DQ26
DQ25
V
SSQ
DQ24
V
SS
2
1
2
2
2
3
2
4
2
5
2
6
2
7
2
8
2
9
NC
BA0
BA1
A10/AP
A0
A1
A2
DQM 2
V
DD
3
0
3
1
3
2
3
3
3
4
3
5
3
6
3
7
3
8
3
9
NC
DQ16
V
SSQ
DQ17
DQ18
V
DDQ
DQ19
DQ20
V
SSQ
DQ21
DQ22
4
0
4
1
4
2
4
3
V
DDQ
DQ23
V
DD
A9
A8
A7
A6
A5
A4
A3
DQM3
V
SS
5
7
5
6
5
5
5
4
5
3
5
2
5
1
5
0
4
9
4
8
4
7
4
6
4
5
4
4
86-pin plastic TSOP II 400mil
Rev 1.0 April, 2001 1
A-Data ADS6632A4A
Pin Description
PIN NAME FUNCTION
CLK System Clock Active on the positive edge to sample all inputs.
CKE Clock Enable Masks system clock to freeze operation from the next clock cycle. CKE
should be enabled at least on cycle prior new command. Disable input
buffers for power down in standby
/CS Chip Select Disables or Enables device operation by masking or enabling all input
except CLK, CKE and DQM0 ~ DQM3
A0~A11 Address Row / Column address are multiplexed on the same pins.
Row address : RA0~RA10
Column address : CA0~CA7
BA0~BA1 Banks Select Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
DQ0~DQ31 Data Data inputs / outputs are multiplexed on the same pins.
DQM0~3 Data Mask Makes data output Hi-Z,
/RAS Row Address Strobe Latches row addresses on the positive edge of the CLK with /RAS low
/CAS Column Address Strobe Latches Column addresses on the positive edge of the CLK with /CAS low
/WE Write Enable Enables write operation and row recharge.
VDD/VSS Power Supply/Ground Power and Ground for the input buffers and the core logic.
VDDQ/VSSQ Data Output Power/Ground Power supply for output buffers.
NC No Connection This pin is recommended to be left No Connection on the device.
Block Diagram
CLK
CKE
Clock
Generator
Address
/CS
/RAS
/CAS
/WE
DQM
Mode
Register
CommandDecoder
ControlLogic
RowDecoder
Address
Buffer
&
Refresh
Counter
Column
Address
Buffer
&
Refresh
Counter
Bank0
Bank2
Bank3
Bank1
Amplifier
ColumnDecoder
DataControlCircuit
DataLatch
DQ
Rev 1.0 April, 2001 2
A-Data ADS6632A4A
Absolute Maximum Ratings
Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, Vout -1.0 ~ 4.6 V
Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150
Power dissipation PD 1 W
Short circuit current IOS 50 mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Condition
Voltage referenced to Vss = 0V, TA = 0 to 70
Parameter Symbol Min Typ Max Unit Note
Supply voltage VDD, VDDQ 3.0 3.3 3.6 V
Input logic high voltage VIH 2.0 3.0 VDD+0.3 V 1
Input logic low voltage VIL -0.3 0 0.8 V 2
Output logic high voltage VOH 2.4 - - V IOH=-2mA
Output logic low voltage VOL - - 0.4 V IOL=2mA
Input leakage current IIL -5 - 5 uA 3
Output leakage current IOL -5 - 5 uA 4
Note : 1. VIH (max)=4.6V AC for pulse width 10ns acceptable.
2.VIL(min)=-1.5V AC for pulse width 10ns acceptable.
3.Any input 0V V
IN VDD + 0.3V, all other pins are not under test = 0V.
4.Dout is disabled, 0V V
OUT VDD.
AC Operating Condition
Voltage referenced to Vss = 0V, TA = 0 to 70
Parameter Symbol Value Unit Note
AC input high / low level voltage VIH / VIL 2.4 / 0.4 V
Input timing measurement reference level voltage Vtrip 1.4 V
Input rise / fall time TR / tF 1 Ns
Output timing measurement reference level Voutfef 1.4 V
Output load capacitance for access time measurement CL 30 pF 2
Note: 1. 3.15V VDD 3.6V is applied for ADS6632A4A5.
2. Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF). For details,
refer to AC/DC output load circuit.
Rev 1.0 April, 2001 3
A-Data ADS6632A4A
Capacitance
TA=25, f-=1Mhz, VDD=3.3V
Parameter Pin Symbol Min Max Unit
CLK Cl1 2.5 4 pF Input capacitance
A0~A11,BA0,BA1,CKE,/CS,/RAS,
/CAS,/WE,DQM
Cl2 2.5 5 pF
Data input / output capacitance DQM CI/O 4 6.5 pF
Output load circuit
V
OH
(DC) = 2.4V,I
OH
= -2m
A
V
OL
(DC) = 0.4V,I
OL
= 2mA
3.3 V
1200 ohms
870 ohms50 pF
Output
DC Characteristics I
Parameter Symbol Min Max Unit Note
Input leakage current ILI -1 1 uA 1
Output leakage current ILO -1.5 1.5 uA 2
Output high voltage VOH 2.4 - V IOH = -2mA
Output low voltage VOL - 0.4 V IOL = 2mA
Note : 1.VIN = 0 TO 3.6V, All other pins are not tested under VIN = 0V.
2.DOUT is disabled, VOUT = 0 to 3.6.
Rev 1.0 April, 2001 4
A-Data ADS6632A4A
DC Characteristics II
Speed
Parameter Symbol Test condition
-5 -5.5 -6
Unit Note
Operating Current IDD1
Burst length=1, One bank active
tRCtRC(min),IOL=0mA
210 200 190 mA 1
IDD2P CKEVIL(max), tCK=min 2
Precharge standby
current in power down
mode IDD2PS CKEVIL(max), tCK= 2
mA
IDD2N
CKEVIH(min), /CSVIH(min),
tCK=min input signals are
changed one time during 2clks. All
other pins VDD-0.2V or
0.2V
15
Precharge standby
current in Non power
down mode
IDD2NS
CKEVIH(min), tCK=
Input signals are stable.
12
mA
IDD3P CKEVIL(max), tCK=min 6
Active standby current
in power down mode IDD3PS CKEVIL(max), tCK= 5
mA
IDD3N
CKEVIH(min), /CSVIH(min),
tCK=min input signals are
changed one time during 2clks. All
other pins VDD-0.2V or
0.2V
30
Active standby current
in Non power down
mode
IDD3NS
CKEVIH(min), tCK=
Input signals are stable.
20
mA
Burst mode operating
current
IDD4
tCKtCK(min),IOL=0 mA
All banks active
280 270 260 mA 1
Auto refresh current IDD5
tRRCtRRC(min), All banks
active
250 240 230 mA 2
Self refresh current IDD6 CKE0.2V 1 mA
Note: 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output
open.
2. Min. of tRRC is shown at AC characteristics.
Rev 1.0 April, 2001 5
A-Data ADS6632A4A
AC Characteristics
-5 -5.5 -6
Parameter Symbol
Min Max Min Max Min Max
Unit Note
/CAS Latency = 3 tCK3 5 5.5 6 System clock
Cycle time /CAS Latency = 2 tCK2 10
1000
10
1000
10
1000 ns
Clock high pulse width tCHW 2 - 2.25 - 2.5 - ns 1
Clock low pulse width tCLW 2 - 2.25 - 2.5 - ns 1
/CAS Latency = 3 tAC3 - 4.5 - 5 - 5.5 Access time form
clock /CAS Latency = 2 tAC2 - 6 - 6 - 6
ns 2
Operation tRC 55 - 55 - 60 -
/RAS cycle time
Auto Refresh tRRC 55 - 55 - 60 -
ns
/RAS to /CAS delay tRCD 15 - 16.5 - 18 - ns
/RAS active time tRAS 40 100K 38.5 100K 42 100K ns
/RAS precharge time tRP 15 - 16.5 - 18 - ns
/RAS to /RAS bank active delay tRRD 10 - 11 - 12 - ns
/CAS to /CAS delay tCCD 1 - 1 - 1 - CLK
Write command to data in delay tWTL 0 - 0 - 0 - CLK
Data in to precharge command tDPL 1 - 1 - 1 - CLK
Data in active command tDAL 5 - 5 - 5 - CLK
DQM to data out Hi-Z tDQZ 2 - 2 - 2 - CLK
DQM to data in mask tDQM 0 - 0 - 0 - CLK
Data out hold time tOH 1.5 - 2 - 2 - ns
Data – input setup time tDS 1.5 - 1.5 - 1.5 - ns 1
Data input hold time tDH 1 - 1 - 1 - ns 1
Address setup time tAS 1.5 - 1.5 - 1.5 - ns 1
Address hold time tAH 1 - 1 - 1 - ns 1
CKE setup time tCKS 1.5 - 1.5 - 1.5 - ns 1
CKE hold time tCKH 1 - 1 - 1 - ns 1
Command setup time tCS 1.5 - 1.5 - 1.5 - ns 1
Command hold time tCH 1 - 1 - 1 - ns 1
CLK to data output in low Z-time tOLZ 1 - 1 - 1 - ns
MRS to new command tMRD 2 - 2 - 2 - CLK
Power down exit time tPDE 1 - 1 - 1 - CLK
Self refresh exit time tSRE 1 - 1 - 1 - CLK 3
Refresh time tREF - 64 - 64 - 64 ms
Note : 1. Assume tR / tF (input rise and fall time) is 1 ns.
2. Access times to be measured with input signals of 1v / ns edge rate.
3.A new command can be given tRRC after self refresh exit.
Rev 1.0 April, 2001 6
A-Data ADS6632A4A
Command Truth-Table
Command CKEn-1 CKEn /CS /RAS /CAS /WE DQM ADDR A10/AP BA
Mode Register Set H X L L L L X OP code
H X X X
No Operation H X
L H H H
X X
Bank Active H X L L H H X RA V
Read L
Read with Auto Precharge
H X L H L H X CA
H
V
Write L
Write with Auto Precharge
H X L H L L X CA
H
V
Precharge All Bank H X
Precharge select Bank
H X L L H L X X
L V
Burst Stop H X L H H L X X
DQM H X V X
Auto Refresh H H L L L H X X
Entry H L L L L H X
H X X X
Self Refresh
Exit L H
L H H H
X
X
H X X X
Entry H L
L H H H
X
H X X X
Precharge
Power down
Exit L H
L H H H
X
X
H X X X
Entry H L
L V V V
X
Clock Suspend
Exit L H X X
X
Rev 1.0 April, 2001 7
A-Data ADS6632A4A
Package Information
Symbol Dimension in mm Dimension in inch
Min Norm Max Min Norm Max
A
1.20
0.047
A1 0.05 0.10 0.15 0.002 0.004 0.006
A2 0.95 1.00 1.05 0.037 0.039 0.011
b0.17
0.27 0.007
0.018
b1 0.17 0.20 0.23 0.007 0.008 0.009
c0.12
0.21 0.005
0.008
c1 0.10 0.127 0.16 0.004 0.005 0.006
D 22.22 B SC 0.875 B SC
ZD 0.61 RE F 0.024 R EF
E 11.76 BSC 0.463 BSC
E1 10.16 B SC 0.400 BSC
L 0.40 0.50 0.60 0.016 0.020 0.024
L1 0.80 R EF 0.031 R EF
e 0.50 B SC 0.020 BSC
R1 0.12
0.005
R2 0.12
0.25 0.005
0.010
0
80
8
10
0
2101520101520
310 15 20 10 15 20
400mil 86pin TSOP II Package
Rev 1.0 April, 2001 8