1
TN2640
12/19/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
N-Channel Enhancement-Mode
Vertical DMOS FETs
TN2640
Low Threshold
Features
❏Low threshold — 2.0V max.
❏High input impedance
❏Low input capacitance
❏Fast switching speeds
❏Low on resistance
❏Free from secondary breakdown
❏Low input and output leakage
❏Complementary N- and P-channel devices
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Applications
❏Logic level interfaces – ideal for TTL and CMOS
❏Solid state relays
❏Battery operated systems
❏Photo voltaic drives
❏Analog switches
❏General purpose line drivers
❏Telecom switches
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
BVDSS /R
DS(ON) VGS(th) ID(ON)
BVDGS (max) (max) (min) SO-8 TO-92 DPAK Die†
400V 5.0Ω2.0V 2.0A TN2640LG TN2640N3 TN2640K4 TN2640ND
† MIL visual screening available.
Ordering Information
Order Number / Package
S G D
TO-92
1
2
3
4
8
7
6
5
top view
SO-8
NC
NC
S
G
D
D
D
D
G
S
D (TAB)
TO-252
(D-PAK)
2
TN2640
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 220mA 2.0A 1.0W 125 170 220mA 2.0A
SO-8 260mA 2.0A 1.3W†24 96†260mA 2.0A
DPAK 500mA 3.0A 2.5W†6.25 50 500mA 3.0A
* ID (continuous) is limited by max rated Tj.
† Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Thermal Characteristics
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Symbol Parameter Min Typ Max Unit Conditions
BVDSS 400 V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 0.8 2.0 V VGS = VDS, ID= 2.0mA
∆VGS(th) Change in VGS(th) with Temperature -2.5 -4.0 mV/°CV
GS = VDS, ID= 2.0mA
IGSS Gate Body Leakage 100 nA VGS = ± 20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 10 µAV
GS = 0V, VDS = Max Rating
1.0 mA VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current 1.5 3.5 VGS = 5.0V, VDS = 25V
2.0 4.0 VGS = 10V, VDS = 25V
RDS(ON) 3.2 5.0 VGS = 4.5V, ID = 500mA
3.0 5.0 VGS = 10V, ID = 500mA
∆RDS(ON) Change in RDS(ON) with Temperature 0.75 %/°CV
GS = 10V, ID = 500mA
GFS Forward Transconductance 200 330 m VDS = 25V, ID = 100mA
CISS Input Capacitance 180 225
COSS Common Source Output Capacitance 35 70 pF
CRSS Reverse Transfer Capacitance 7.0 25
td(ON) Turn-ON Delay Time 4.0 15
trRise Time 15 20
td(OFF) Turn-OFF Delay Time 20 25
tfFall Time 22 27
VSD Diode Forward Voltage Drop 0.9 V VGS = 0V, ISD = 200mA
trr Reverse Recovery Time 300 ns VGS = 0V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Electrical Characteristics (@ 25°C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
VGS = 0V, VDS = 25V
f = 1.0 MHz
VDD = 25V,
ID = 2.0A,
RGEN = 25Ω
ns
Static Drain-to-Source
ON-State Resistance Ω
Ω
3
TN2640
Typical Performance Curves
Output Characteristics
5.0
4.0
3.0
2.0
1.0
0
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
Saturation Characteristics
V
DS
(volts)
Maximum Rated Safe Operating Area
0 100010010
10
1.0
0.1
0.01
0.001
V
DS
(volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001 100.01 0.1 1.0
t
p
(seconds)
Transconductance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
0
0 2.01.0
G
FS
(siemens)
I
D
(amperes)
D
Power Dissipation vs. Temperature
0 15010050
3.0
2.4
1.8
1.2
0.6
01257525
T
C
(°C)
P
D
(watts)
TO-92
TC = 25°C
PD = 1.0W
SO-8
TO-92
T
A
= -55°C
V
DS
= 25V
010 20 30 5040 0246 108
25°C
125°C
3.0 5.04.0
2.5
2.0
1.5
1.0
0.5
0
4V
8V
V
GS
= 10V
TO-92 (pulsed)
T
C
= 25°C
TO-92 (DC)
SO-8 (DC)
2V
4V
3V
6V 8V
2V
3V
6V
V
GS
= 10V
SO-8 (pulsed)
DPAK
DPAK (DC)
4
TN2640
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
12/19/01rev.1
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
T
j
(°C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
TH
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(°C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
400
C (picofarads)
V
DS
(volts)
I
D
(amperes)
BV
DSS
Variation with Temperature
010203040
200
300
100
0
0246810
3.0
2.4
1.8
1.2
0.6
0
-50 0 50 100 150
1.15
1.10
1.05
1.00
0.95
0.90
10
8
6
4
2
0
1.4
1.2
1.0
0.8
0.6
0.4
10
8
6
4
2
012 345
-50 0 50 100 150
253pF
V
DS
= 10V
V
DS
= 40V
653pF
V
GS
= 10V
V
GS
= 5V
125°C
0 1.0 2.0 3.0 5.04.0
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
2.2
1.8
1.4
1.0
0.6
0.2
25°C
T
A
= -55°C
V
DS
= 25V
0
V
(th)
@ 2mA
R
DS(ON)
@ 10V, 0.5A
Typical Performance Curves