PRELIMINARY
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1 of 1
Copyright 2000
CXXXX.PDF 2000-11-06
WWW.Microsemi .COM
MMBR571MLT1/MRF5711MLT1
RF & MICROWAVE TRANSISTORS
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTIONDESCRIPTION
DESCRIPTION
The MMBR571MLT1/MRF5711MLT1 are low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
KEY FEATURES KEY FEATURES
KEY FEATURES
!
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
! LNA, Oscillator
, Pre-Driver
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
C)
Symbol Parameter Value Unit
VCBO
Collector-Base Voltage 20 V
VCEO
Collector-Emitter Voltage 10 V
VEBO
Emitter-Base Voltage 2.5 V
IC
Device Current 80 mA
PDISS
Power Dissipation 333 mW
TJ
Junction Temperature 150 C
TSTG
Storage Temperature -55 to +150
C
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance 225 C/W
MMBR571MLT1/MRF5711MLT1
!
!
High FTau-8GHz
Low noise-2.2dB@1GHz
Low cost SOT23/SOT143
package
SOT-23
MMBR571MLT1
SOT-143
MRF5711MLT1
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25C)
Symbol Test Conditions Min. Typ. Max.
Units
BV
CBO
I
C
= .1mA I
E
= 0 20 V
BV
CEO
I
C
=.1mA I
B
= 0
10 V
I
CBO
V
CB
= 8V I
E
= 0
10
uA
h
FE
V
CE
= 5 V I
C
= 30 mA
50 300
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25C)
Symbol Test Conditions Min. Typ. Max.
Units
f = 1.0 MHz
V
CB
= 10 V
GHz
F
CB
C
FTau
NF
G
NFmin
P
0.7
8.0
2.2
11.5
V
CE
= 5 V I = 50 mA
C
f = 1.0 GHz
V
CE
= 6 V I = 10 mA
C
f = 1.0 GHz
V
CE
= 6 V I = 10 mA
C
f = 1.0 GHz
S21
2
V
CE
= 6 V I = 10 mA
C
f = 1.0 GHz 10
dB
dB
dB
