Si4848DY Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) () ID (A) 0.085 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.5 * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFETs * Compliant to RoHS Directive 2002/95/EC D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4848DY-T1-E3 (Lead (Pb)-free) Si4848DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 150 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Pulsed Drain Current Avalanche Current L = 0.1 mH Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID TA = 25 C TA = 70 C 3.7 2.1 IAS 10 A 2.5 1.3 3.0 1.5 1.9 1.0 TJ, Tstg Operating Junction and Storage Temperature Range 2.7 25 PD V 3.0 IDM IS Unit - 55 to 150 W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 35 42 68 82 18 23 Unit C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71356 S09-0870-Rev. C, 18-May-09 www.vishay.com 1 Si4848DY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. 2.0 Typ. Max. Unit 100 nA Static VGS(th) VDS = VGS, ID = 250 A Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage VDS = 120 V, VGS = 0 V 1 VDS = 120 V, VGS = 0 V, TJ = 55 C 5 VDS 5 V, VGS = 10 V RDS(on) Forward Transconductancea a V A 25 A VGS = 10 V, ID = 3.5 A 0.068 0.085 VGS = 6.0 V, ID = 3.0 A 0.076 0.095 gfs VDS = 15 V, ID = 5 A 15 VSD IS = 2.5 A, VGS = 0 V 0.75 1.2 17 21 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 75 V, VGS = 10 V, ID = 3.5 A 6.0 0.5 td(on) Turn-On Delay Time VDD = 75 V, RL = 21 ID 3.5 A, VGEN = 10 V, Rg = 6 tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 3.2 IF = 2.5 A, dI/dt = 100 A/s 0.85 1.8 9.0 14 10 15 24 35 17 25 45 70 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 25 VGS = 10 V thru 6 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 15 5V 10 5 15 10 TC = 125 C 5 25 C 3 V, 4 V 0 - 55 C 0 0 www.vishay.com 2 2 4 6 8 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 6 Document Number: 71356 S09-0870-Rev. C, 18-May-09 Si4848DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1200 0.12 Ciss 900 C - Capacitance (pF) R DS(on) - On-Resistance () 0.15 0.09 VGS = 6 V VGS = 10 V 0.06 600 300 Crss 0.03 Coss 0.00 0 0 5 10 15 20 25 0 30 ID - Drain Current (A) 60 120 150 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 3.0 20 VDS = 75 V ID = 3.5 A VGS = 10 V ID = 3.5 A 2.5 16 12 8 4 2.0 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 90 1.5 1.0 0.5 0.0 - 50 0 0 6 12 18 24 30 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature 50 150 0.25 TJ = 150 C R DS(on) - On-Resistance I S - Source Current (A) 0.20 TJ = 25 C 10 ID = 3.5 A 0.15 0.10 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71356 S09-0870-Rev. C, 18-May-09 10 www.vishay.com 3 Si4848DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.0 60 50 ID = 250 A 40 0.0 Power (W) VGS(th) Variance (V) 0.5 - 0.5 30 20 - 1.0 10 - 1.5 - 50 - 25 0 25 50 75 100 125 150 0 0.01 TJ - Temperature (C) 0.1 1 Time (s) 10 Threshold Voltage Single Pulse Power 100 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 68 C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71356. www.vishay.com 4 Document Number: 71356 S09-0870-Rev. C, 18-May-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 8 0 8 S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000