Philips Semiconductors Fast charge ICs for NiCd and NiMH batteries Objective specification TEA1103; TEA1103T Caen ee ee eee ee ee aS FEATURES Safe and fast charging of Nickel Cadmium (NiCd) and Nickel Metal Hydride (NiMH) batteries Pin compatible with the TEA1102 and TEA1102T, fast charge ICs for Lilon, SLA, NiCd and NiMH batteries Three charge states for NiCd or NiMH; fast, top-off and trickle or voltage regulation (optional) Adjustable fast charge current [0.5CA to 5CA nominal (CA = Capacity Amperes)} DC top-off and pulsating trickle charge current (NiCd and NiMH) * Temperature dependent AT/At battery full detection Automatic switch-over to accurate peak voltage detection (-'4%) if no NTC is applied Possibility to use both AT/At and peak voltage detection as main fast charge termination Support of inhibit during all charging states Manual refresh with regulated adjustable discharge current (NiCd and NiMH) Voltage regulation in the event of no battery Support of battery voltage based charge indication and buzzer signalling at battery insertion, end of refresh and at full detection Single, dual and separate LED outputs for indication of charge status state Minimum and maximum temperature protection Time-out protection Short-circuit battery voltage protection ORDERING INFORMATION Can be applied with few low-cost external components. GENERAL DESCRIPTION The TEA1103 and TEA1103T are fast charge ICs which are able to fast charge NiCd and NiMH batteries. The main fast charge termination for NiCd and NiMH batteries are AT/At and peak voltage detection, both of which are well proven techniques. The TEA1103 and TEA1103T automatically switches over from AT/At to peak voltage detection if the thermistor fails or is not present. The AT/At detection sensitivity is temperature dependent, thus avoiding fatse charge termination. Three charge states can be distinguished; fast, top-off and trickle. Several LEDs, as well as a buzzer, can be connected to the TEA1103 and TEA1103T for indicating battery insertion, charge states, battery full condition and protection mode. The TEA1103 and TEA1103T are contained in a 20-pin package and are manufactured in a BiCMOS process, essentially for integrating the complex mix of requirements in a single chip solution. Only a few external low cost components are required in order to build a state of the art charger. The TEA1103 and TEA1108T are pin compatible with the TEA1102 and TEA1102T, fast charge ICs for Lilon, SLA, NiCd and NiMH batteries. TYPE PACKAGE NUMBER NAME DESCRIPTION VERSION TEA1103 DIP20 plastic dual in-line package; 20 leads (300 mil) SOT146-1 TEA1103T $020 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 1996 Aug 20 MB 7110826 0107208 162Philips Semiconductors Objective specification Fast charge ICs for NiCd and NiMH ; TEA1103; TEA1103T batteries QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Vp supply voltage 5.45 - 11.5 Vv Ip supply current outputs off - 4 - mA AVwtc/Vntc | temperature rate dependent Vatec = 2 V; - 0.25 - % (AT/At) detection level Tj = 0 to 50 C AVbat/V bat voltage peak detection level with | Vpat = 2 V; - 0.25 - % respect to top value T; = 0 to 50 C lybat input current battery monitor Voat = 0.3 to 1.9 V - 1 ~ nA Voat(!) voltage at pin 19 for detecting low - 0.30 - Vv battery voltage lig battery charge current fast charge 10 - 100 pA top-off mode - 3 - LA liB(max) maximum battery charge current | voltage regulation full | 10 - WA NiCd and NiMH battery lB(Lmax) maximum load current no battery - 40 _ HA fose oscillator frequency 10 - 200 kHz Vieg regulating voltage NiCd and NiMH - 1.325 0r |- Vv (pin Vstp open-circuit) Vsib open battery - 1.9 - Vv 1996 Aug 20 3 MB 7110826 0107209 OT9Objective specification Philips Semiconductors Fast charge ICs for NiCd and NiMH batteries TEA1103T TEA1103 BLOCK DIAGRAM wesBelp yoolg 1 BIg 194. GND Sa Bq da LeSHEW | a tt ET EL zh Qld Z yOOTE HaLUIANOO AlddNs av/vd dod 9 NOILVOIONI SNLVLS req, 39UWHO ONY ars Hawt i> 91901 TOULNOD asd ; al coOLllval it OM @ 96 yorno) + ASLO AU OO} Aayeq HIN -U oy yseljel + ou POIN Aaneq AGL zt HS4u 47>) T yy |e AGL OS AyA Sze"L Ou roa xe! + At = U1 ov ae Ly yse.yel At 9st | gt ' pue AStp NY NN ) S vw ~<a NY Del 1 +hr-4 $7 A at , 1d, Mol A '0 sh Aseyeq d tHE Age WMd wl VY jueses sy Het OLN -U SHSAIHG LNdLNO tt iss aNv 1 r -WMd asey_| | | IOWLNOD SDYVHO 7 ETE os0 wior wior wie Muse NOILOSLOUd Ves fl. $4 queuing yuauno yo aBieyo peo} Aqpuejs do} ysey a a vit 0Z L 6k 9s0 yeu, VS, 1A, OLN 1996 Aug 20 Mi 7110826 0107210 Bip |Philips Semiconductors Objective specification Mi 7110826 0107211 757 Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T PINNING SYMBOL | PIN DESCRIPTION Votb 1 standby regulation voltage input (NiCd and NiMH) IB 2 charge current setting GND 3 ground 0 PSD 4 | program pin sample divider Veto [1 [20] Fret LED 5 LED output Bia 19] Vat POD 6 program pin oscillator divider GND [3 | 18] AO PTD 7 program pin time-out divider Psp [4 | 7] us NTC 8 temperature sensing input Leo [5] F] Vs MTV 9 maximum temperature voltage TEA1103 : Pop [6 | 15] PWM RFSH 10 | refresh input/output FCT 11. | fast charge termination and pr [7 [14] osc battery chemistry identification NTC [8 | 13] Vet Vp 12 | positive supply voltage MTV [9] 12] Vp Vs 13 | switched reference voltage output RFSH [70] ha] Ect osc 14 | oscillator input PWM 15 | pulse width modulator output Vs 16 | stabilized reference voltage LS 17 | loop stability pin AO 18 | analog output Vobat 19 | single-cell battery voltage input Fig.2 Pin configuration. Rreg 20 _ | reference resistor pin 1996 Aug 20 5Philips Semiconductors Fast charge ICs for NiCd and NiMH batteries Objective specification TEA1103; TEA1103T INTRODUCTION All battery types are initially fast charged with an adjustable high current. Fast charge termination depends upon the battery type. With NiCd and NiMH batteries the main fast charge termination will be the AT/At (temperature detection) and/or peak voltage detection. The fast charge period is followed by a top-off period for NiCd and NiMH batteries. During the top-off period the NiCd and NiMH batteries are charged to maximum capacity by reduced adjustable charge current. The top-off period ends after time-out or one hour respectively. After the top-off period, the TEA1103 switches over to the standby mode. For NiCd and NiMH batteries either the voltage regulation or trickle charge mode can be selected. The voltage regulation mode is selected when the battery includes a fixed load. Trickle charge prevents a discharge of the battery over a long period of time. Charging principles CHARGING NiCd/NiMH BATTERIES Fast charging of the battery begins when the power supply voltage is applied and at battery insertion. During fast charge of NiCd and NiMH batteries, the battery temperature and voltage are monitored. Outside the initialized temperature and voltage window, the system switches over to the top-off charge current. The TEA1103 supports detection of fully charged NiCd and NiMH batteries by either of the following criteria: AT/At Voltage peak detection. If the system is programmed with AT/At and Vpeak Or, AT/At OF Vpeak aS the main fast charge termination, it automatically switches to voltage peak detection if the battery pack is not provided with a temperature sensing input (NTC). In this way both packages, with and without temperature sensor, can be used randomly independent of the applied full detection method. Besides AT/At and/or voltage peak detection, fast charging is also protected by temperature cut-off and time-out. To avoid false fast charge termination by peak voltage detection or AT/At, full detection is disabled during a short hold-off period at the start of a fast charge session. After fast charge termination, the battery is extra charged by a top-off period. During this period of approximately one hour, the charge current is lowered thus allowing the 1996 Aug 20 MH 71108eb 0107212 693 oe battery to be charged to nearly 100% before the system switches over to standby. After the battery has been charged to nearly 100% by the top-off period, discharge of the battery (caused by a load or by the self-discharge) can be avoided by voltage regulation or by trickle charge. If batteries are charged in combination with a load, the TEA1103 can be programmed to apply voltage regulation during the standby mode. In this way, discharge of the battery caused by self-discharge or by an eventual load is avoided. The regulating voltage is adjustable to the voltage characteristic of the battery. For battery safety the charge current is limited and the temperature is monitored during voltage regulation. If a trickle charge is applied, the self-discharge of the battery will be compensated by a pulsating charge current. To avoid the so called memory effect in NiCd batteries, a refresh can be manually activated. The discharge current is regulated by the IC in combination with an external power transistor. After discharging the battery to 1 V per cell, the system automatically switches over to fast charge. FUNCTIONAL DESCRIPTION Control logic The main function of the control logic is to support the communication between several blocks. It also controls the charge method, initialization and battery full detection. The block diagram of the TEA1103 is illustrated in Fig.1. Conditioning charge method and initializations At system switch-on, or at battery insertion, the control logic sets the initialization mode in the timer block. After the initialization time the timer program pins can be used to indicate the charging state using several LEDs. The charge method is defined at the same time by the following methods: * If the FCT pin is floating, the system will charge the battery according to the charge characteristic of NiCd and NiMH batteries. * The standby charge method (NiCd and NiMH), trickle charge or voltage regulation, is defined by the input pin Vstb- By biasing this voltage with a set voltage, the output voltage will be regulated to the V,) set voltage. If this pin is connected to Vs, or no NTC is connected the system applies trickle charge.Philips Semiconductors Fast charge ICs for NiCd and NiMH batteries Objective specification TEA1103; TEA1103T {f pin RFSH is connected to ground by depressing the switch, the TEA1103 discharges the battery via an external transistor connected to pin RFSH. The discharge current is regulated with respect to the external (charge) sense resistor (Rsense). End-of-discharge is reached when the battery is discharged to 1 V per cell. Refreshing the battery can only be activated during charging of NiCd and The inhibit mode has the main priority. This mode is activated when the Vip input pin is connected to ground. inhibit can be activated at any charge/discharge state, whereby the output contro! signals will be zero, all LEDs will be disabled and the charger timings will be set on hold. Table 1 gives an operational summary. NiMH batteries. Table 1 Functionality of program pins FUNCTION FCT NTC RFSH Vstb Inhibit xt) x) x) low Refresh not low) x) low not low AT/At detection floating note 3 not low not low AT/At and voltage peak detection high note 3 not low not low Voltage peak detection not low note 4 not low not low Trickle charge at standby not low x) not low high not low note 4 not low not low Voltage regulation at standby not low note 3 not low floating Notes 1. Where X = dont care. Not low means floating or high. a Pon Supply block The supply block delivers the following outputs: A power-on reset pulse to reset all digital circuitry at battery insertion or supply switch-on. After a general reset the system will start fast charging the battery. * A 4.25 V stabilized voltage source (Vs) is externally available. This source can be used to set the thermistor biasing, to initialize the programs, to supply the external circuitry for battery voltage based charge indication and to supply other external circuitry. e A 4.25 V bias voltage (V,)) is available for use for more indication LEDs. This output pin will be zero during the initialization period at start-up, thus avoiding any interference of the extra LEDs when initializing. Charge control The charge current is sensed via a low-ohmic resistor (Rsense), see Fig.4. A positive voltage is created across resistor Rp by means of a current source l;e; which is set by 1996 Aug 20 ME 7110826 0107213 SoT The NTC voltage has been to be less than 3.3 V, which indicates the presence of an NTC. The NTC voltage is outside the window for NTC detection. Vstb has to be floating or set to a battery regulating voltage in accordance with the specification. Fret in the event of fast charge and by an internal bias current source in the event of top-off and trickle charge (lip), see Fig.1. The positive node of Ry will be regulated to zero via error amplifier A1, which means that the voltage across Rp and Reense will be the same. The fast charge current is defined by the following equation: ltast* Rsense = Ry X lies (1) The output of amplifier A1 is available at the loop stability pin LS, consequently the time constant of the current loop can be set. When Vpeak (NiCd and NiMH) is applied, the current sensing for the battery voltage will be reduced, implying that the charge current will be regulated to zero during: 10 teense = 2 XPODxty.. (2) Actually battery voltage sensing takes place in the last oscillator cycle of this period.Philips Semiconductors Fast charge ICs for NiCd and NiMH batteries Objective specification TEA1103; TEA1103T To avoid modulation on the output voltage, the top-off charge current is DC regulated, defined by the following equation: -6 lop - off * Reense = Rp X3x 10 (3) where: 27 tiop-off = 2 xTODxt,., (4) The top-off charge current will be approximately 0,15CA, which maximizes the charge in the battery under safe and slow charging conditions. The top-off charge period will be approximately one hour, so the battery will be extra charged with approximately 0.15 Q. In this way the battery is fully charged before the system switches over to standby. When pin 1 (Vsip) is connected to Vs, or no NTC is connected the system compensates the (self) discharge of the battery by trickle charge. The trickle charge current will be pulsating, detined by the following equation: 15 -6 xR = Ryx 32x10 (5) trickle sense During the non current periods at trickle charge the charge current is regulated to zero, so that the current for a load connected in series across the battery with the sense resistor will be supplied by the power supply and not by the battery. If at pin 1 (Vstp) a reference voltage is set in accordance with the specification, and no NTC is connected the charge mode will switch over from current to voltage regulation after top-off. The reference regulating voltage can be adjusted to the battery characteristic by external resistors connected to pin Vetp. This reference voltage has to be selected in such a way that it equals the rest voltage of the battery. By using voltage regulation, the battery will not be discharged at a load occurrence. If the Vetp input pin is floating, the TEA1103 will apply voltage regulation at 1.325 V during the standby mode (NiCd and NiMH). The current during voltage regulation is limited to 0.5CA. If the battery charge current is maximized to 0.5CA for more than 2 hours charging will be stopped. Moreover, if the temperature exceeds Tmax, charging will be stopped completely. As voltage regulation is referred to one cell, the voltage on the Vpat pin must be the battery voltage divided by the number of cells (NiCd and NiMH). When charging, the standby mode can only be entered after a certain period of time depending on time-out. To support full test of the TEA1103 at application, the standby mode is also entered when Vpat < Vbat() at top-off. 1996 Aug 20 MM 7110826 0107214 4bb Timer The timing of the circuit is controlled by the oscillator frequency. The timer block defines the maximum charging time by time-out. At a fixed oscillator frequency, the time-out time can be adapted by the Programmable Time-out Divider (PTD) using the following equation. time-out = 2 XPODxPTD xt. (6) The time-out timer is put on hold by low voltage, temperature protection and during the inhibit mode. The Programmable Oscillator Divider (POD) enables the oscillator frequency to be increased without affecting the sampling time and time-out. Raising the oscillator frequency will reduce the size of the inductive components that are used. At fast charging, after battery insertion, after refresh or supply interruption, the full detector will be disabled for a period of time to allow a proper start with flat or inverse polarized batteries. This hold-off period is disabled at fast charging by raising pin Vstp to above +5 V (once). So for test options it is possible to slip the hold-off period. The hold-off time is defined by the following equation: -5 thold-off = 2 * time-out (7) Table 2 gives an overview of the settings of timing and discharge/charge currents.Philips Semiconductors Fast charge ICs for NiCd and NiMH batteries Table 2) Timing and current formulae Objective specification TEA1103; TEA1103T SYMBOL DESCRIPTION FORMULAE tose timing see Fig.3 T sampling (AT/At) NTC voltage sampling frequency 217 x POD x PSD x tose Tsampling (Vpeak) battery voltage sampling frequency 216 x POD x tose thop-off 227 x POD x tosc time-out 226 x POD x PTD x tose thotd-off 2 x time-out tLleD inhibit or protection 214 x POD x tose tsense 210 x POD x tose tewitch 221 x POD x PTD & tose ltast charge/discharge currents R, Viet Rsense Rret ltop-oft R Px 3x 10 Reense Itrickle R L. x 15 x10 Rsense 16 load-max R Ox 40x 10 Rsense IRFSH 100 mV Reense 1996 Aug 20 M8 7110826 0107215 3TePhilips Semiconductors Fast charge ICs for NiCd and NiMH batteries Objective specification TEA1103; TEA1103T PTD programming 7 2 4 (GND) (n.c.) (+ Vg) 200 fosc (kHz) {160 120 80 2 preferred loscillator }"~ range 40 10 30 50 70 90 110 130 0 30 60 90 120 150 180 * time-out (mins) (POD = n.c.) Fig.3 time-out 2S a function of R8 and PTD with C4 as parameter. 12.5 12.5 (R8 min) (R8 max) C4 (pin 14) (pF) | I I I | | | | | 68 R8 (pin 20) (kQ) MGD280 LED indication With few external components, indication LEDs can be connected to the program pins and the LED pin of the TEA1103. These program pins change their function from an input to an output pin after a short initialization time at system switch-on or battery insertion. Output pin V. enables the external LEDs to be driven and avoids interaction with the programming of the dividers during the initialization period. The applied LEDs indicate: e Protection * Refresh Fast charge 100% No-battery. The LED output pin can also indicate the charging state by one single LED. The indication LED can be connected directly to the LED output. This single LED indicates: 1996 Aug 20 WB 7110826 0107216 239 e Fast charge (LED on) * 100% or refresh (LED off) e Protection or inhibit (LED floating). The refresh can be indicated by an extra LED connected to pin 4 (PSD). A buzzer can also be driven from the TEA1103 to indicate battery insertion end of refresh or full battery. AD/DA converter When battery full is determined by peak voltage detection, the Vpat voltage is sampled at a rate given by the following equation: 16 tsampling (V peak) = 2 xPODxt.. (8) The analog value of a Vpat sample is then digitized and stored in a register. On the following sample, the digitized value is converted back to the analog value of Vpar and compared with the new Vp. sample.Philips Semiconductors Fast charge ICs for NiCd and NiMH batteries At an increase of the battery voltage the 14-bit Analog-to-Digital Converter (ADC) is refreshed with this new value. Therefore, the digitized value always represents the maximum battery voltage. A decreased Vbat Voltage is not stored, but is compared to the stored value. Full is detected when the voltage decrease of Vpat is %4% of the stored peak battery value. To avoid interference due to the resistance of the battery contacts during battery voltage sensing, the charge current is regulated to zero during t = 210 x POD x tog, via the regulation pins AO and PWM. At the last period, the Vpat voltage is sensed and stored in a sample-and-hold circuit. This approach ensures very accurate detection of the battery full condition (minus 4%). When battery full is determined by AT/At, the voltage on the NTC pin is used as the input voltage to the AD/DA converter. The sampling time at AT/At sensing is given by the following equation: AT 17 at) =2 xPODxPSDxt,.. sampling (9) After this initialized sample time the new temperature voltage is compared to the preceding AD/DA voltage and the AD/DA is refreshed with this new value. A certain increase of the temperature is detected as full battery, depending on the initialization settings. The decision of full detection by AT/At or Vpeax is digitally filtered thus avoiding false battery full detection. 1996 Aug 20 OH 7110826 See | 11 Objective specification TEA1103; TEA1103T Output drivers The charge current regulation signal is available at two output pins, AO and PWM. ANALOG OUTPUT The analog control voltage output at pin 18 (AO) can be used to drive an opto-coupler in mains separated applications when an external resistor is connected between AO and the opto-coupler. The maximum current through the opto-coupler diode is 2 mA. The voltage gain of amplifier A2 is typical 11 dB (times 3.5). The DC voltage transfer is given by the following equation: Vao = 3.5 x (Vig 1.35). The AO output can be used for: Linear (DC) applications Not mains isolated SMPS with a separate controller Mains isolated SMPS, controlled by an opto-coupler. PULSE WIDTH MODULATOR (PWM) The LS voltage is compared internally with the oscillator voltage to deliver a pulse width modulated output at PWM (pin 15) to drive an output switching device in a SMPS converter application via a driver stage. The PWM output is latched to prevent multi-pulsing. The maximum duty factor is internally fixed to 79% (typ.). The PWM output can be used for synchronization and duty factor control of a primary SMPS via a pulse transformer.Philips Semiconductors Fast charge ICs for NiCd and NiMH Objective specification TEA1103; TEA1103T batteries LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); note 1 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Voltages Vp positive supply voltage -0.5 - 11.5 Vv VoLED output voltage at pin 5 -0.5 - 15 Vv Vn voltage at pins PWM, LS and NTC -0.5 - +V5 Vv Vip voltage at pin 2 -0.5 - 1.0 Vv Currents lvs current at pin 16 -3 - +0.01 mA lvl current at pin 13 -1 - +0.3 mA loLED output current at pin 5 - - 12 mA lao output current at pin 18 ~10 - +0.05 mA lopWM output current at pin 15 -15 - +14 mA IRret current at pin 20 -1 - +0.01 mA Ip positive supply current Tj < 100 C - - 30 mA Ip(stb) supply standby current Vp=4V - 35 45 BA Dissipation Prot total power dissipation Tamb = 85 C SOT146-1 - - 1.2 WwW SOT163-1 - - 0.6 Ww Temperatures Tamb operating ambient temperature -20 - +85 C Tj junction temperature - - +150 C Tstg storage temperature 55 - +150 C Note 1. All voltages are measured with respect to ground; positive currents flow into the IC; all pins not mentioned in the voltage list are not allowed to be voltage driven. The voltage ratings are valid provided that other ratings are not violated; current ratings are valid provided that the power rating is not violated. QUALITY SPECIFICATION In accordance with the general quality specification for integrated circuits: SNW-FQ-611E. 1996 Aug 20 71410426 0107214 OO] 12Philips Semiconductors Fast charge ICs for NiCd and NiMH Objective specification TEA1103; TEA1103T batteries CHARACTERISTICS Vp = 10 V; Tamb = 25 C; Rre = 62 kOQ; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies; pins Vp, Vs, Rret and Vsi Vp supply voltage 5.45 - 11.5 V lp supply current outputs off; Vp = 11.5 V _ 4 6 mA Volamp clamping voltage (pin 12) \clamp = 30 MA 11.5 - 12.8 Vv Vetart start voltage 6.1 6.4 6.7 Vv Visp low supply protection level 4.65 5.05 5.45 Vv Vs source voltage (stabilized) Is =2mA 4.14 4.25 4.36 Vv Vet LED source voltage lLep = 50 pA 4.05 4.25 4.45 Vv Viet reference voltage lef = 20 WA; Vp = 10 V 1.21 1.25 1.29 Vv TCvwret temperature coefficient of the | Tamp =0 to 45 C; 0 +60 +120 ppm/K reference voltage lret = 20 LA; Viet = 1.25 V AV ie/AVp power supply rejection ratio of | f= 100 Hz; Vp =8 V; 46 - - dB the reference voltage AVp = 2 V (p-p) AV ret load rejection of source Als = 20 mA; Vp = 10 V - - 5 mV voltage IRref current range of reference 10 - 100 pA resistor Charge current regulation; pins IB and Rret lip/ret fast charge Vip =0 0.85 1.0 1.15 Vv Vinis threshold voltage at pin IB Tamb = 25 C -2 - +2 mv Tamb = 0 to 45 C -3 - +3 mv ls charge current top-off mode; Vig = 0 2.5 3 3.5 pA lwB(max) maximum charge current voltage regulation full 8.4 10 11.6 LA NiCd/NiMH battery; Vip = 0 lig(Lmax) maximum load current open battery; Vig = 0 33 40 47 HA lie input leakage current currentless mode ~ - 150 nA Refresh; pin RFSH VRsense sense resistor voltage Vie 85 100 115 mV lefresh = Roonce ; refresh mode; lefresh = 18 MA VRFSH refresh voltage for NiCd/NiMH 0 - 250 mV programming start of refresh Vobat voltage at pin Vp: for NiCd/NiMH 0.9 1.0 1.1 Vv detecting end of refresh Isource(max) maximum source current Vip = 85 mV; Vp = 10 V 1.8 2 2.2 mA VRFSH =2.7V; Tamb = 25C VRESH(max) | Maximum refresh voltage lnFsH = 1 mA 2.7 - - Vv VRESH(off) voltage at pin RFSH when 700 770 840 mV refresh is off 1996 Aug 20 13 Ma 7110826 0107219 THsPhilips Semiconductors Objective specification Fast charge ICs for NiCd and NiMH TEA1103; TEA1103T batteries SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Temperature related inputs; pins NTC and MTV Vntch input voltage at pin NTC for pin MTV open-circuit 0.95 1 1.05 Vv detecting high temperature | MTV setting 0.9MTV | MTV 1.4MTV |V VNtTCh(hy) hysteresis of Vatch 60 90 120 mV Vantec input voltage at pin NTC, 27 2.8 2.9 Vv detecting low temperature VnTci(hy) hysteresis of Vitc 65 100 135 mV VNNTC(eo) input voltage at pin NTC for O.7MTV |0.75MTV |O.8MTV | V detecting temperature cut-off VnTc(bat) maximum input voltage at 3.15 3.3 3.45 Vv pin NTC for detecting battery with NTC Inte input current at pin NTC Vutc=2V -5 - +5 pA Vetv voltage level at pin MTV default (open-circuit) 0.95 1 1.05 V 0.5 - 2.5 Vv AVntc/Vntc | AT/At detection level Vatc=2V;T)=O0t050C |- 0.25 - % Voltage regulation Vieg regulation voltage NiCd and NiMH; 1.30 1.325 1.35 Vv pin Vsip open-circuit NiCd and NiMH; Vetp = 1.5 V1 0.99Vetp | Vetp 1.01Vstb | V open battery 1.85 1.9 1.95 Vv TCvreg temperature coefficient of Vreg = 1.325 V; 0 - +120 ppm/K regulation voltage Tamb = 0 to 45 C Om transconductance of amplifier | Vpat = 1.9 V; - 2.8 - mA/V A3 no battery mode Program pin Vstp Vstb open voltage at pin Vip 1.30 1.325 1.35 Vv Vstb(m) voltage at pin Vetp for 0 - 0.8 Vv programming inhibit mode Vstbist) voltage at pin Vetp for NiCd and NiMH 1.0 - 2.2 Vv programming voltage regulation at standby Vstbite) voltage at pin Vgtp for NiCd and NiMH 2.6 - Vs Vv programming trickle charge at standby 1996 Aug 20 14 Mio71104826 0107220 747Philips Semiconductors Fast charge ICs for NiCd and NiMH Objective specification TEA1103; TEA1103T batteries SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Program pins; PSD, POD and PTD V46,7 voltage level at pins PSD, default (open-circuit) 1.9 2.1 2.3 Vv POD or PTD Va.6,7(1) voltage level at pins PSD, 0 - 1.2 Vv POD or PTD for programming the divider = 1 V4.6,7(2) voltage level at pins PSD, 1.6 - 2.5 Vv POD or PTD for programming the divider = 2 V4.6,7(4) voltage level at pins PSD, 3.1 - Vs Vv POD or PTD for programming the divider = 4 IPopsink protection current for Vpeop = 1.5 V 8 10 12 mA multi-LED indication IPTDsink full battery current for Vptp = 1.5 V 8 10 12 mA multi-LED indication Ipspsink refresh current for multi-LED | Vpsp = 1.5 V 8 10 12 mA indication Iu input leakage current Vpop = 4.25 V; 0 - 50 HA Vetp =4.25V; Vesp = 4.25 V Program pin FCT VEcTior) voltage level for programming | NiCd and NiMH 0.0 - 3.3 Vv AT/At OF Voeak as fast charge termination Vectiand) voltage level for programming | NiCd and NiMH 3.7 - Vs Vv AT/At and Vpeax a8 fast charge termination VecT voltage level at pin FCT default (open-circuit) 2.3 2.6 2.9 Vv Program pin LED VLED(m) output voltage level for 0 - 2.5 Vv programming multi-LED indication VLED\s) output voltage level for 3.1 - Vp V programming single LED indication Isink(max) maximum sink current Viep =1.5V 8 10 12 mA ILILED) input leakage current Viep = 10V 0 - 70 pA Viep = 0.6 V 0 - 5 pA Voimax) maximum output voltage - _ 15 V 1996 Aug 20 15 Pa 7110826 O1 O?eel BTLPhilips Semiconductors Objective specification Fast charge ICs for NiCd and NiMH TEA1103; TEA1103T batteries SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Output drivers; AO, LS and PWM lac(source) analog output source current | Vag =3 V (p-p); Vig = 2.8 V |-10 - 0 mA laqysink) analog output sink current Vao =3 V (p-p); Vig = 1-2 V 150 - - HA Qm1 transconductance of amplifier | Vig = 50 mV - 250 - pA Al Gyi1,2 voltage gain of amplifiers Vao = 3 V (p-p) - 72 - dB Ai and A2 Gye voltage gain of amplifier A2 Vao = 2 V (p-p) - 11 - dB ILs(source) maximum source current Vis =2.25V -25 -21 -16 HA (pin LS) ILs(sink) maximum sink current (pin LS) | Vig = 2.25 V 16 21 25 HA lon(Pwe) HIGH level output current Vepwm =3 V -19 ~15 -11 mA lo(pw) LOW level output current Vewe = 0.7 V 10 14 18 mA dpwm maximum duty factor - 79 - % Battery monitor; Vpat lVbat battery monitor input current | Vpat = 1.85 V - 1 - nA Voat voltage range of Vpeax 0.3 - 2 Vv detection AVbatV bat Vpeak detection level with Vbat = 1.85 V; T; = 0 to 50 C | - 0.25 - % respect to top level AVpbat voltage resolution for Vpeak 0.42 0.6 0.78 mV Protections; Vpat Vbatil maximum voltage at pin Vpat 0.27 0.30 0.33 Vv for detecting low battery voltage Oscillator; pin OSC Vosc(H) HIGH level oscillator switching - 2.5 - Vv voltage Vose(L) LOW level! oscillator switching - 1.5 - Vv voltage fose(min) minimum oscillator frequency | Rrep= 125 kQ; Cog, = 400 pF | 19 21 23 kHz fose(max) maximum oscillator frequency | Rre = 12.5 kQ; 106 133 160 kHz Cose = 400 pF 1996 Aug 20 16 PM 71108eb 0107222 532Objective specification Philips Semiconductors Fast charge ICs for NiCd and NiMH batteries TEA1103T TEA1103 APPLICATION INFORMATION wes6elp pseog jsey oIseq pbiy eBeyo- se}, XPLy - =cu () eluxszt ez vie yyo- doy = Ely (2) IXply aGreyo-Ise4) yseuye., . ou jf}; = 40 = aiqeondde jou! aay = vb 4 Ag, = PHY CD) sysHen (yO KO ly 0 9+ o{__} ' | (yse4j21 v1) (yo doy ys1'0) i esuas, Dae aaa et 4 | | 4 HES) | yu) Che | I i (10) 4d ety a0 | | | | | xB . zi4 | | (2640) 12H (%40) (eBreyo | 02 No @ a . -4 | | 1 OF isqy yy) 1 9 aug} | I | GAOL (% 10) Szu 0129 z9 yseujou | | | eeu Die a T | I I 9zu te) &eu + $7 | | I \ oso tert sz | t | | o, : % o Pasay pub ed ! | ! 1 1 gy 6 HWIN 9HWIN & EHIN pay] % gl o 6 POIN 9 POIN E POIN 4q ov og pou eu 16298 | st | pow SdWwS cud Jo ! | ora, | Bt Wid hy | 89 G/O/E | A GN 4.+, . Ysedyel IAIN a wee gu | POIN | H , rasa are ry oy L tA ~~) ais | | sa, tt 4 90 atoor go 55 javol = weed, ead, f0Ltval UIEE t 19 T * 6 410 pue zomva | 7 WAY IWALV 4 ONO aE (HOO! ea | | & & 194 Z Ree ad { I w4zl = CASE | gt! did Sa Bde Ky og x I ! DH EE | { id bs za I | W 6 ano -, . Yooa}old ened | I Al oNee oF led Ou | | io Tad Oe we | ON OIN |? So 80 UH EL Ise} oF s .---__{ ore asep SA an Koa! arzaag ! | + 1 a | 7 flrs THeE ve i | l dU 00L 9 A A y--- 5 --- $1129 om | | (% 10} we " aet<(oa)!a usu sou i j | t4 08 Sty 10} MUO 24 Sh 30} Ajuo) | | bee ey 8ZAAG ant oop a 11 i Bo sezaa | ABLoOL wo Saws) tu | toah'a 17 1996 Aug 20 WH 71108eb 0107223 475Philips Semiconductors Objective specification Fast charge ICs for NiCd and NiMH ; TEA1103; TEA1103T batteries v; (DC) TR1 BD231 (D2 for more than 3 NiCd cells) + battery +9 P| e 7to11.5V we / (Rgupply = 270 @ for more than 3 NiCd cells) Rio! cS 200 ko | (1%) no) 1S , 7 1kQ . Vv. Vv 3 kQ sl 13 12 P rT R | r o1 100 nF "7 Vv | LED |, is} 4.25V | | Vv 4NS pop NTC RE 8 8 10 ka 1 GND | R7 MTV . | 40Vg 9 {+f | o___PD }, NICd/NIMH = co t 10 FCT +L C1 GND 14 TT +l os 100 HF '40Vg TEA1103 TL T 470 pF PSD |, 1 | Vstb | NiCd 1 NiMH GNP V 3 cells PWM | 1. 49 |_bat | | R 20 ref | | | 44 LOSC | | 3 GND C4 R8 RQ I == 220 pF | 240 [| 100 ka | R4 (fose = (0.5A (0.1%) | (Rp) 5.1 kQ 75 kHz) fast I (75 mA top off) RS 0.222 charge) I ~o Rsense op battery MBH546 Fig.5 Linear application diagram. 1996 Aug 20 18 MA 7110826 0107224 305Philips Semiconductors Objective specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T Vsense Ss TEAI102 TEST BOARD. V This test board (designed for the TEA1102) can also be used for the TEA1103. Fig.6 Component side of printed-circuit board (test board). 1996 Aug 20 19 MH 7110826 O107e2eS CholPhilips Semiconductors Objective specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T MBHO72 Fig.7 Track side of printed-circuit board (test board). 1996 Aug 20 20 ME 7110826 0107226 148 omPhilips Semiconductors Objective specification Fast charge ICs for NiCd and NiMH batteries TEA1103; TEA1103T MBHO071 This printed-circuit board (designed for the TEA1102) can also be used for the TEA1103. Fig.8 Component side of printed-circuit board (linear application). MBHO070 This printed-circuit board (designed for the TEA1102) can also be used for the TEA1103. Fig.9 Track side of printed-circuit board (linear application). 1996 Aug 20 21 MH 7110826 0107227 O14 aPhilips Semiconductors Fast charge ICs for NiCd and NiMH Objective specification ; TEA1103; TEA1103T batteries PACKAGE OUTLINE DIP20: plastic dual in-line package; 20 leads (300 mil) SOT146-1 | seating plane Fa pin 1 index 10 0 5 10mm bee scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) A Ay A2 (1) ) z) UNIT | max. | min. | max. b by ce D E e & L Me My w max. 1.73 0.53 0.36 26.92 6.40 3.60 8.25 10.0 mm | 42 | 051 | 32 1 439 | 038 | 023 | 2654 | e22 | 254 | 762 | 305 | 780 | 33 | 0254 | 20 : 0.068 | 0.021 | 0.014 | 1.060 0.25 0.14 0.32 0.39 inches | 0.17 | 0.020 | 013 | 9951 | 0.015 | 0.009 | 1.045 | 0.24 | 19 | 930 | gia | 931 | og | 001 | 0.078 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 92-44-47 SOT146-1 SC603 =} 95.08.24 1996 Aug 20 22 Me 71108eb 0107228 TSOPhilips Semiconductors Objective specification Fast charge ICs for NiCd and NiMH TEA1103: TEA1103T . 3 batteries $020: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D - E {A I [rr YA J TH HH ee S> Je \ } Tn | ~~ a on | He ale 20 "1 ' ' t Q 1 py Ld dt A2 Ay D\* (As) 4 1 t t | pin 1 index i t 6 Z | Lp Ln f HHE HRY ERY | | ' | _ [e]+- + S@ 0 5 10mm l i 1 1 L i 1 l 1 j scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT | max.| At | A2 | As | bp | | DM) EM) e | He | L | oe} a] v | wi] oy | 2M) 6 0.30 | 2.45 049 | 0.32 | 1301] 7.6 10.65 wo] 44 0.9 mm | 265 | o10 | 2.25 | 925 | o36 | 0.23 | 126} 74 | 127 140.00] 4 | o4 | ao | 025} 025] 01 | oy 8 a ; 0.012 | 0,096 0.019 | 0.013 | 0.51 | 0.30 0.42 0.043 | 0.043 0.035| 0 inches | 0-10 | 9 004 | 0.089 | 997 | 0.014] 0.009 | 0.49 | 0.29 | 9-95] o'gq | 0-055 | o'o16 | 0.039 | 0-01 | 0-01 | 0.004 | oo Note 1, Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION lec JEDEC EIAJ PROJECTION SOT163-1 075E04 MS-013AC } oe Aten 1996 Aug 20 23 Wm 7110826 0107229 997 =Philips Semiconductors Fast charge ICs for NiCd and NiMH batteries Objective specification TEA1103; TEA1103T SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our IC Package Databook (order code 9398 652 90011). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max)- If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. so REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. 1996 Aug 20 24 Me 7110826 0107230 605 a Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: e A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. e The longitudinal axis of the package footprint must be parallel to the solder flow. The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonally- opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.