27-29 GHz GaAs MMIC Power Amplifier AA028P1-00 Features Chip Outline Single Bias Supply Operation (6 V) 1.700 22 dBm Typical P1 dB Output Power at 28 GHz 1.613 1.371 13.5 dB Typical Small Signal Gain 0.25 m Ti/Pd/Au Gates 0.329 0.086 3.400 2.749 0.790 100% Visual Inspection to MIL-STD-883 MT 2010 0.000 0.000 100% On-Wafer RF and DC Testing Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Skyworks' two-stage balanced Ka band GaAs MMIC power amplifier has a typical P1 dB of 22 dBm with 12.5 dB associated gain and 10% power added efficiency at 28 GHz. The chip uses Skyworks' proven 0.25 m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the commercial and high reliability areas where high power and gain are required. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55C to +90C Storage Temperature (TST) -65C to +150C Bias Voltage (VD) 7 VDC Power In (PIN) 22 dBm Junction Temperature (TJ) 175C Electrical Specifications at 25C (VDS = 6 V) Parameter Condition Drain Current (at Saturation) Symbol Min. IDS 11 Typ.3 Max. Unit 300 400 mA -13 -10 dB -16 -10 Small Signal Gain F = 27-29 GHz G Input Return Loss F = 27-29 GHz RLI 13.5 dB Output Return Loss F = 27-29 GHz RLO Output Power at 1 dB Gain Compression F = 28 GHz P1 dB 21 22 dBm 22 dB Saturated Output Power F = 28 GHz PSAT 23 dBm Two-Tone Output Third-Order Intercept1 F = 28 GHz OIP3 31 dBm Gain at Saturation F = 28 GHz GSAT 11 dB JC 51 C/W Thermal Resistance2 1. Not measured on a 100% basis. 2. Calculated value based on measurement of discrete FET. 3. Typical represents the median parameter value across the specified frequency range for the median chip. Skyworks Solutions, Inc. [781] 376-3000 * Fax [781] 376-3100 * Email sales@skyworksinc.com * www.skyworksinc.com Specifications subject to change without notice. 011/02A 1 27-29 GHz GaAs MMIC Power Amplifier AA028P1-00 Typical Performance Data 20 26 S21 PIN 14 24 10 12 POUT (dBm) 22 (dB) 0 -10 S11 -20 S22 10 16 8 6 4 12 S12 10 -40 26 28 27 30 29 27 32 31 28 29 30 31 32 Frequency (GHz) Frequency (GHz) Typical Small Signal Performance S-Parameters (VDS = 6 V) Output Characteristics as a Function of Frequency and Input Drive Level (VDS = 6 V) 32 35 31 34 33 OIP3 (dBm) 30 OIP3 (dBm) 18 14 -30 29 28 27 32 31 30 29 26 28 27 27.0 25 4.0 14 13 12 11 10 9 8 7 6 5 4 3 2 1 -9 4.5 5.0 5.5 6.0 27.5 28.0 28.5 29.0 VDS (V) Frequency (GHz) Two-Tone Output Third-Order Intercept @ 28 GHz Two-Tone Output Third-Order Intercept @ VDS = 6 V -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 POUT IM3 -8 -7 -6 -5 -4 -3 IM3 (dBc) POUT (dBm) 20 -2 PIN (dBm) Output Power and Relative Third-Order Intermodulation Products F = 28 GHz, VDS = 6 V 2 Skyworks Solutions, Inc. [781] 376-3000 * Fax [781] 376-3100 * Email sales@skyworksinc.com * www.skyworksinc.com Specifications subject to change without notice. 011/02A 27-29 GHz GaAs MMIC Power Amplifier AA028P1-00 Bias Arrangement 50 pF Circuit Schematic 50 pF 6V .01 F RF IN RF OUT Detail A 50 pF 50 pF VDS .01 F 6V For biasing on, adjust VDS from zero to the desired value (6 V recommended). For biasing off, reverse the biasing on procedure. RF IN VDS SEE DETAIL A RF OUT VDS VDS Skyworks Solutions, Inc. [781] 376-3000 * Fax [781] 376-3100 * Email sales@skyworksinc.com * www.skyworksinc.com Specifications subject to change without notice. 011/02A 3