Skyworks Solutions, Inc. [781] 376-3000 •Fax [781] 376-3100 •Email sales@skyworksinc.com •www.skyworksinc.com 1
Specifications subject to change without notice. 011/02A
27–29 GHz GaAs MMIC
Power Amplifier
Features
■Single Bias Supply Operation (6 V)
■22 dBm Typical P1 dB Output Power
at 28 GHz
■13.5 dB Typical Small Signal Gain
■0.25 µm Ti/Pd/Au Gates
■100% On-Wafer RF and DC Testing
■100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA028P1-00
Description
Skyworks’ two-stage balanced Ka band GaAs MMIC
power amplifier has a typical P1 dB of 22 dBm with
12.5 dB associated gain and 10% power added efficiency
at 28 GHz. The chip uses Skyworks’ proven 0.25 µm
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for S-parameters and power characteristics prior
to shipment for guaranteed performance. A broad range
of applications exist in both the commercial and high
reliability areas where high power and gain are required.
Parameter Condition Symbol Min. Typ.3Max. Unit
Drain Current (at Saturation) IDS 300 400 mA
Small Signal Gain F = 27–29 GHz G 11 13.5 dB
Input Return Loss F = 27–29 GHz RLI-13 -10 dB
Output Return Loss F = 27–29 GHz RLO-16 -10 dB
Output Power at 1 dB Gain Compression F = 28 GHz P1 dB 21 22 dBm
Saturated Output Power F = 28 GHz PSAT 22 23 dBm
Two-Tone Output Third-Order Intercept1F = 28 GHz OIP3 31 dBm
Gain at Saturation F = 28 GHz GSAT 11 dB
Thermal Resistance2ΘJC 51 °C/W
Electrical Specifications at 25°C (VDS = 6 V)
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
1.700
1.613
1.371
0.086
0.000
0.000
0.790
2.749
3.400
0.329
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic Value
Operating Temperature (TC) -55°C to +90°C
Storage Temperature (TST) -65°C to +150°C
Bias Voltage (VD)7 V
DC
Power In (PIN) 22 dBm
Junction Temperature (TJ) 175°C
Absolute Maximum Ratings
27–29 GHz GaAs MMIC Power Amplifier AA028P1-00
2Skyworks Solutions, Inc. [781] 376-3000 •Fax [781] 376-3100 •Email sales@skyworksinc.com •www.skyworksinc.com
Specifications subject to change without notice. 011/02A
-40
-30
-20
-10
0
10
20
26 28 30 32
S11
S12
S21
S22
Frequency (GHz)
(dB)
Typical Small Signal Performance
S-Parameters (VDS = 6 V)
27 29 31
Frequency (GHz)
Output Characteristics as a Function of
Frequency and Input Drive Level
(VDS = 6 V)
10
27 28 29 30 31 32
12
14
16
18
20
22
24
26
POUT (dBm)
14
PIN
10
86
4
12
Two-Tone Output Third-Order
Intercept @ 28 GHz
VDS (V)
OIP3 (dBm)
4.0 4.5 5.0 5.5 6.0
25
26
27
28
29
30
31
32
Two-Tone Output Third-Order
Intercept @ VDS = 6 V
Frequency (GHz)
OIP3 (dBm)
27
28
29
30
31
32
33
34
35
27.0 27.5 28.0 28.5 29.0
Output Power and Relative Third-Order
Intermodulation Products
F = 28 GHz, VDS = 6 V
PIN (dBm)
POUT (dBm)
IM3 (dBc)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
-9 -8 -7 -6 -5 -4 -3 -2
-52
-50
-48
-46
-44
-42
-40
-38
-36
-34
-32
-30
-28
-26
IM3
POUT
Typical Performance Data
27–29 GHz GaAs MMIC Power Amplifier AA028P1-00
Skyworks Solutions, Inc. [781] 376-3000 •Fax [781] 376-3100 •Email sales@skyworksinc.com •www.skyworksinc.com 3
Specifications subject to change without notice. 011/02A
RF IN
RF OUT
6 V
.01 µF
.01 µF
50 pF
50 pF
50 pF
50 pF
6 V
Bias Arrangement
Detail A
VDS
VDS
RF IN
RF OUT
VDS
VDS
SEE
DETAIL A
Circuit Schematic
For biasing on, adjust VDS from zero to the desired value
(6 V recommended). For biasing off, reverse the biasing on procedure.
