SMI-P CHIPS MULTILAYER FERRITE CHIP POWER INDUCTORS FEATURES PRODUCT INDENTIFICATION SMI-P chip inductors are 3L line of high that is suitable for P- 1R0 M (1) (2) (3) (4) (5) (2).Dimensions( in mm) portable (3).P : For high current electronic equipments requiring low profile. z 252010 (1).Product Code current ferrite chip inductors. Minimized design SMI - (4).Inductance Code High Performance Characteristics (5).Tolerance Code SMI-P chips exhibit low DC resistance and high current. z Wide Inductance Range SMI-P chip inductors cover a wide range of Code Tolerance M 20% N 30% inductance values from 1.0 H to 10 H. z OPERATING TEMPERATURE: -40 ~ 85 High Reliability TEST EQUIPMENTS AND TEST SETUP SMI-P chip inductors have a monolithic L&Q&SRF by Agilent E4991A RF Impedance inor- ganic material construction that Analyzer with HP16197A Test Fixture. effectively minimizes electromagnetic DCR interference. z by milli-ohm meter. High Soldering Heat Resistance PRODUCT DIMENSIONS SMI-P chip inductors have high quality termination allowing both flow and reflow soldering methods to be used. APPLICATIONS SMI chip inductors can be used in a variety of electronics including: z z z Mobile phones MP3 Player Bluetooth z DSC z LCD / DVR z Portable digital equipment PRODUCT NO. A B C D SMI-201610P 2.00.20 1.60.20 1.0MAX 0.50.20 SMI-252010P 2.50.20 2.00.20 1.00.20 0.50.20 SMI-322510P 3.20.20 2.50.20 1.00.20 0.50.30 NOTE:Dimensions in mm Page 69 SMI-P CHIPS MULTILAYER FERRITE CHIP POWER INDUCTORS PRODUCT SPECIFICATIONS Inductance Q TEST FREQ. RDC (m) Current (mA) Max. (H) TYP (MHz) 20% L/Lo:30% SMI-252010P-1R0M 1.0 15 1 290 1200 SMI-252010P-2R2M 2.2 19 1 430 1000 SMI-252010P-3R3M 3.3 23 1 520 950 SMI-252010P-4R7M 4.7 26 1 650 850 SMI-252010P-6R8M 6.8 30 1 790 600 SMI-252010P-100M 10.0 35 1 740 350 SMI-322510P-2R2M 2.2 23 1 300 1300 SMI-322510P-3R3M 3.3 25 1 380 1060 SMI-322510P-4R7M 4.7 28 1 450 850 SMI-322510P-6R8M 6.8 30 1 520 680 SMI-322510P-100M 10.0 35 1 640 510 Part Number PRODUCT SPECIFICATIONS Inductance TEST FREQ. RDC (m) Current (mA) Max. (H) (MHz) 30% T/To:40 SMI-201610P-1R2N 1.2 1 100 1400 SMI-201610P-2R2N 2.2 1 120 1300 SMI-201610P-3R3N 3.3 1 140 1200 SMI-201610P-4R7N 4.7 1 160 1100 Part Number The maximum DC current having inductance decrease within L =30% and temperature to rise becomes T=40, whichever is lower. (Reference ambient temperature 20) Page 70 SMI-P CHIPS MULTILAYER FERRITE CHIP POWER INDUCTORS TYPICAL ELECTRICAL CHARACTERISTIC CURVES SMI-252010P SMI-322510P SMI-201610P Page 71