QS043-402-2/5 94 93.00 4x 15.24= 60.96 16.02 15.24 12.62 83 5-fasten tab #250 CL 17 G6 E6 V 12-fasten tab #110 G2 E2 G4 E4 PMB50E6 W 11.00 32.00 U G6 E6 12 1 15.5 2.50 18 18 15.75 5 13 5 13 5 3.81 8.00 11.43 5x 11.43= 57.15 70.40 107.00 13 PMB50E6C 15.00 15.00 LABEL 2.00 11 12 21.00 13.00 8 LABEL 21 14 7 8 6 15 4-O 2.10 1.15x 1.00 9 10 7.00 17 3 4 5 6 32 16 1 2 2-O 5.50 13 G5 E5 CL G3E3 44 W G4 E4 G1 E1 45.00 41.91 28.4 V G2 E2 2-O 5.5 G5 E5 18 U G3 E3 33 24 G1 E1 4-O 6.00 104.20 PMB50E6 PMB50E6C Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque , . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 600V, = 0V . = 20V,= 0V . ollector-mitter aturation oltage = 50A,= 15V . . ate-mitter hreshold oltage = 5V,= 50mA . . nput apacitance witching ime ise urn-on all urn-off ime ime ime ime = 10V,= 0V,= 1MH 2,500 = = = = . . . . . . . . 300V 6.0 20 15V orward urrent eak orward oltage everse ecovery ime 1 . . . = 50A,= 0V . . = 50A,= -10V i/t= 100A/s . . . . . . 1. hermal mpedance iode th(j-c) Junction to Case Tc 00 QS043-402-3/5 Fig.1- Output Characteristics (Typical) VGE=20V VGE=20V Collector Current I C (A) 60 50 10V 40 30 15V 80 11V 70 9V 11V 70 60 10V 50 40 9V 30 20 20 8V 10 0 0 1 2 3 4 8V 10 0 5 0 1 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage V CE (V) 50A 10 8 6 4 2 4 8 12 16 5 T C=125C IC=25A 14 50A 12 10 8 6 4 2 0 20 100A 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 400 16 RL =6.0( TC=25C 350 VGE=0V f=1MHZ T C=25C 14 300 12 250 10 VCE =300V 200 8 200V 150 6 100V 100 4 Cies 3000 1000 Coes Cres 300 100 2 50 0 10000 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) 100A 12 0 4 16 Capacitance C (pF) Collector to Emitter Voltage V CE (V) IC=25A 14 3 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C 16 2 Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 0 12V 90 15V 80 T C=125C 100 12V 90 Collector Current I C (A) Fig.2- Output Characteristics (Typical) T C=25C 100 0 50 100 150 0 200 30 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage VCE (V) 00 QS043-402-4/5 Fig.7- Collector Current vs. Switching Time (Typical) 1 10 VCC=300V RG=20( VGE=15V T C=25C Resistive Load tOFF 5 2 Switching Time t (s) Switching Time t (s) 0.8 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 0.6 tf 0.4 tON 0.2 1 0.5 toff 0.2 ton tr(V CE) tf 0.1 0.05 tr(VCE) 0 VCC=300V IC=50A VGE=15V T C=25C Resistive Load 0 20 40 60 0.02 80 10 30 Collector Current IC (A) 10 tOFF 5 2 Switching Time t (s) Switching Time t (s) VCC=300V RG=20( VGE=15V T C=125C Inductive Load tON tf 0.1 tr(Ic) 0.01 0.001 0 20 40 60 1 0.5 toff 0.2 ton 0.1 tf 0.05 tr(IC ) 0.02 80 VCC=300V IC=50A VGE=15V T C=125C Inductive Load 10 30 Fig.11- Collector Current vs. Switching Loss 300 Fig.12- Series Gate Impedance vs. Switching Loss 4 100 VCC=300V RG=20( VGE=15V T C=125C Inductive Load 3 EOFF EON 2 ERR 1 0 10 20 30 40 50 60 70 80 Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 100 Series Gate Impedance RG (( ) Collector Current IC (A) 0 300 Fig.10- Series Gate Impedance vs. Switching Time Fig.9- Collector Current vs. Switching Time 10 1 100 Series Gate Impedance RG (( ) VCC=300V IC=50A VGE=15V T C=125C Inductive Load 30 EON 10 EOFF 3 ERR 1 0.3 10 Collector Current IC (A) 30 100 300 Series Gate Impedance RG (( ) 00 QS043-402-5/5 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) T C=25C Fig.14- Reverse Recovery Characteristics (Typical) 1000 60 40 20 1 2 3 500 trr 200 100 50 20 10 5 2 4 IRrM 0 50 100 Forward Voltage VF (V) 150 200 250 300 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 200 RG=20 (, VGE=15V, T C<125C 100 50 Collector Current I C (A) 0 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 1x10 1 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) 80 0 IF=50A T C=25C T C=125C T C=125C Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 100 3 FRD 1 IGBT 3x10 -1 1x10 -1 3x10 -2 T C=25C 1x10 -2 1 Shot Pulse 3x10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) 00