Semiconductor Group 1
PNP Silicon Transistors BF 421
With High Reverse Voltage BF 423
5.91
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BF 421
BF 423 Q62702-F532
Q62702-F496
– TO-92
123
E C B
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Collector current ICmA
Junction temperature Tj˚C
Total power dissipation, TC = 88 ˚C Ptot mW
Storage temperature range Tstg
Collector-emitter voltage
R
BE = 2.7 k VCER
Thermal Resistance
Junction - ambient Rth JA ≤ 150 K/W
50
830
150
– 65 … + 150
Collector-base voltage VCB0
– 250
300 –
BF 421 BF 423
Peak base current IBM 100
300 250
Emitter-base voltage VEB0 5
Junction - case2) Rth JC ≤ 75
●High breakdown voltage
●Low collector-emitter saturation voltage
●Low capacitance
●Complementary types: BF 420, BF 422 (NPN)
1
2
3
Semiconductor Group 2
BF 421
BF 423
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
µACollector cutoff current
VCE = 200 V, RBE = 2.7 k , TA=150 ˚C
Ω
ICER ––10
VCollector-emitter breakdown voltage
I
C = 1 mA BF 423 V(BR)CE0 250 – –
nACollector cutoff current
VCB = 200 V ICB0 ––10
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 10 µA BF 421
BF 423
V(BR)CB0 300
250 –
––
–
Emitter-base breakdown voltage, IE = 10 µAV(BR)EB0 5––
V
Collector-emitter saturation voltage1)
I
C = 25 mA, Tj =150 ˚C VCEsatRF ––20
–DC current gain
I
C = 100 µA, VCE = 20 V
I
C = 25 mA, VCE = 20 V
hFE 15
50 –
––
–
Emitter cutoff current, VEB = 5 V IEB0 ––10
MHzTransition frequency
I
C = 20 mA, VCE = 10 V, f = 20 MHz fT– 100 –
AC characteristics
pFOutput capacitance
VCB = 30 V, f = 1 MHz Cobo – 0.8 –
Collector-emitter breakdown voltage
I
C = 10 µA, RBE = 2.7 k BF 421 V(BR)CER 300 – –
1) Pulse test: t≤300 µs, D≤ 2%.
Semiconductor Group 3
BF 421
BF 423
Total power dissipation Ptot =f(TA;TC)
Permissible pulse load RthJA = f (tp)
Collector current IC=f(VBE)
VCE = 20 V, TA = 25 ˚C
Collector cutoff current ICB0 =f(TA)
VCB = 200 V
Semiconductor Group 4
BF 421
BF 423
DC current gain hFE =f(IC)
VCE = 20 V, TA = 25 ˚C
Output capacitance Cobo =f(VCB)
IC= 0, f = 1 MHz
Transition frequency fT=f(IC)
VCE = 10 V, f = 20 MHz
