DATA SHEET NPN SILICON RF TRANSISTOR NE68118 / 2SC5012 ED NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES * High Gain Bandwidth Product (fT = 9 GHz TYP.) * Low Noise, High Gain IN U * Low Voltage Operation * 4-pin super minimold Package ORDERING INFORMATION Part Number Quantity NE68118-A 2SC5012-A 50 pcs (Non reel) NE68118-T1-A 2SC5012-T1-A 3 kpcs/reel Supplying Form * 8 mm wide embossed taping O NT * Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V DI SC ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter VEBO 1.5 V IC 65 mA 150 mW Emitter to Base Voltage Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Free air Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10504EJ01V0DS (1st edition) (Previous No. P10400EJ2V0DS00) Date Published July 2004 CP(K) JEITA Part No. The mark shows major revised points. NE68118 / 2SC5012 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics ICBO VCB = 10 V, IE = 0 mA - - 1.0 A Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA - - 1.0 A 50 100 250 - - 9.0 - GHz 13 15 - dB - 1.2 2.5 dB - 0.25 0.8 pF DC Current Gain hFE Note 1 VCE = 8 V, IC = 20 mA RF Characteristics fT VCE = 8 V, IC = 20 mA 2 Insertion Power Gain Noise Figure Reverse Transfer Capacitance S21e VCE = 8 V, IC = 20 mA, f = 1.0 GHz NF VCE = 8 V, IC = 7 mA, f = 1.0 GHz Cre Note 2 VCB = 10 V, IE = 0 mA, f = 1.0 MHz IN U Gain Bandwidth Product Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank EB FB Marking R36 R37 hFE Value 50 to 100 80 to 160 GB R38 O NT 125 to 250 DI SC 2 ED Collector Cut-off Current Data Sheet PU10504EJ01V0DS NE68118 / 2SC5012 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) 200 150 100 25 50 75 100 125 150 Ambient Temperature TA (C) 0.1 1 2 10 0 5 10 20 0.5 50 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current IC (mA) 20 1.0 IB = 200 A 180 A 160 A 140 A 20 120 A 100 A 80 A 60 A 10 0 40 A 20 A 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT DI SC Base to Emitter Voltage VBE (V) 10 Gain Bandwidth Product fT (GHz) VCE = 8 V 200 100 50 20 1 0.2 O NT Collector Current IC (mA) 30 10 0.5 30 VCE = 8 V 40 500 1.0 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 f = 1 MHz IN U 50 2.0 ED Free Air 0 DC Current Gain hFE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 10 100 12 VCE = 8 V f = 1 GHz 8 6 4 2 0 Collector Current IC (mA) 1 2 5 10 20 50 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10504EJ01V0DS 3 NE68118 / 2SC5012 20 VCE = 8 V IC = 20 mA 40 30 20 MAG 10 |S21e|2 0.5 1.0 5.0 NOISE FIGURE vs. COLLECTOR CURRENT 3 2 1 0 1 2 5 10 20 50 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. DI SC S-PARAMETERS 4 1 O NT Noise Figure NF (dB) VCE = 8 V f = 1 GHz 4 0 2 5 10 20 Collector Current IC (mA) Frequency f (GHz) 5 10 IN U 0 0.1 VCE = 8 V f = 1 GHz ED 50 INSERTION POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Insertion Power Gain |S21e|2 (dB) MAXIMUM AVAILABLE GAIN/INSERTION POWER GAIN vs. FREQUENCY Data Sheet PU10504EJ01V0DS 50 100 NE68118 / 2SC5012 PACKAGE DIMENSIONS 4-PIN SUPER MINIMOLD (UNIT: mm) 1.30 0.65 ED 0.3+0.1 -0.05 0.65 3 2 1.250.1 IN U 0.15+0.1 -0.05 0.3 4 +0.1 -0.05 1 0 to 0.1 0.3 O NT 0.90.1 0.4 +0.1 -0.05 0.65 0.60 1.25 2.00.2 0.3+0.1 -0.05 2.10.2 PIN CONNECTIONS DI SC 1. Collector 2. Emitter 3. Base 4. Emitter Data Sheet PU10504EJ01V0DS 5 NOTICE 5. 6. 7. 8. 9. 10. 11. 12. D UE 4. IN 3. NT 2. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 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DI CEL Headquarters * 4590 Patrick Henry Drive, Santa Clara, CA 95054 * Phone (408) 919-2500 * www.cel.com For a complete list of sales offices, representatives and distributors, Please visit our website: www.cel.com/contactus Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: CEL: NE68118-T1-A 2SC5012-T1-A 2SC5012-A