SUM70060E
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S16-0244-Rev. A, 15-Feb-16 1Document Number: 65383
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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N-Channel 100 V (D-S) MOSFET
Ordering Information:
SUM70060E-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET® power MOSFET
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power supplies:
- Uninterruptible power supplies
- AC/DC switch-mode power supplies
- Lighting
• Synchronous rectification
•DC/DC converter
• Motor drive switch
• DC/AC inverter
• Battery management
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
VDS (V) RDS(on) () MAX. ID (A) Qg (TYP.)
100 0.0056 at VGS = 10 V 131 53.5 nC
0.0062 at VGS = 7.5 V 129
TO-263
Top View G
D
S
G
D
S
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID
131
A
TC = 125 °C 75
Pulsed Drain Current (t = 100 μs) IDM 240
Avalanche Current L = 0.1 mH IAS 50
Single Avalanche Energy aEAS 125 mJ
Maximum Power Dissipation aTC = 25 °C PD
375 b
W
TC = 125 °C 125 b
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient (PCB Mount) cRthJA 40 °C/W
Junction-to-Case (Drain) RthJC 0.75
SUM70060E
www.vishay.com Vishay Siliconix
S16-0244-Rev. A, 15-Feb-16 2Document Number: 65383
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2 - 4
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 100 V, VGS = 0 V - - 1 μA
VDS = 100 V, VGS = 0 V, TJ = 125 °C - - 100
VDS = 100 V, VGS = 0 V, TJ = 175 °C - - 2 mA
On-State Drain Current aID(on) V
DS 10 V, VGS = 10 V 90 - - A
Drain-Source On-State Resistance aRDS(on)
VGS = 10 V, ID = 30 A - 0.0046 0.0056
VGS = 7.5 V, ID = 30 A - 0.0048 0.0062
Forward Transconductance agfs VDS = 15 V, ID = 30 A - 85 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V, VDS = 50 V, f = 1 MHz
- 3330 -
pFOutput Capacitance Coss - 1395 -
Reverse Transfer Capacitance Crss -95-
Total Gate Charge cQg
VDS = 50 V, VGS = 10 V, ID = 30 A
- 53.5 81
nCGate-Source Charge cQgs - 14.5 -
Gate-Drain Charge cQgd - 13.2 -
Gate Resistance Rgf = 1 MHz 0.9 1.9 3.8
Turn-On Delay Time ctd(on)
VDD = 50 V, RL = 1.67
ID 30 A, VGEN = 10 V, Rg = 1
-1326
ns
Rise Time ctr-2244
Turn-Off Delay Time ctd(off) -2754
Fall Time ctf-918
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current (t = 100 μs) ISM --240A
Forward Voltage aVSD IF = 30 A, VGS = 0 V - 0.86 1.4 V
Reverse Recovery Time trr
IF = 30 A, di/dt = 100 A/μs
- 88 176 ns
Peak Reverse Recovery Charge IRM(REC) -510A
Reverse Recovery Charge Qrr - 0.22 0.44 μC
SUM70060E
www.vishay.com Vishay Siliconix
S16-0244-Rev. A, 15-Feb-16 3Document Number: 65383
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
50
100
150
200
250
012345
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 7 V
V
GS
= 6 V
V
GS
= 4 V
V
GS
= 5 V
10
100
1000
10000
0
20
40
60
80
100
0 5.0 10.0 15.0 20.0 25.0 30.0
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
1200
2400
3600
4800
6000
0 20406080100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0
40
80
120
160
200
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0.003
0.004
0.005
0.006
0.007
020406080100
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 7.5 V
VGS = 10 V
10
100
1000
10000
0
2
4
6
8
10
0 1122334455
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
VDS = 25 V, 50 V, and 75 V
ID= 30 A
SUM70060E
www.vishay.com Vishay Siliconix
S16-0244-Rev. A, 15-Feb-16 4Document Number: 65383
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
Current De-Rating
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 30 A
VGS = 10 V
VGS = 7.5 V
10
100
1000
10000
0
0.01
0.02
0.03
0.04
0.05
246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 125 °C
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
-2.0
-1.4
-0.8
-0.2
0.4
1.0
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) - Variance (V)
TJ- Temperature (°C)
2nd line
I
D
= 5 mA
I
D
= 250 µA
10
100
1000
10000
105
110
115
120
125
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Temperature (°C)
2nd line
ID= 250 µA
10
100
1000
10000
0
30
60
90
120
150
0255075100125150175
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
TC- Case Temperature (°C)
2nd line
SUM70060E
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S16-0244-Rev. A, 15-Feb-16 5Document Number: 65383
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area IDAV vs. Time
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
100
1000
10000
0.1
1
10
100
1000
0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on) (1)
TC= 25 °C
Single pulse BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 µs
IDlimited
10
100
1000
10000
10
100
0.00001 0.0001 0.001 0.01
Axis Title
1st line
2nd line
2nd line
IDAV (A)
Time (s)
2nd line
150 °C
25 °C
10
100
1000
10000
0.01
0.1
1
0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
PDM
t1
t2
1. Duty cycle, D =
2. Per unit base = RthJA = 40 °C/W
3. TJM -T
A= PDMZthJA (t)
4. Surface mounted
t1
t2
Notes:
SUM70060E
www.vishay.com Vishay Siliconix
S16-0244-Rev. A, 15-Feb-16 6Document Number: 65383
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65383.
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty Cycle = 0.5
0.2
Package Information
www.vishay.com Vishay Siliconix
Revison: 30-Sep-13 1Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-263 (D2PAK): 3-LEAD
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
-A-
-B-
D1 D4
AA
eb2
b
EAc2
c
L2
D
L3
L
Detail “A”
E1
E2
K
E3
D2
D3
6
0.010 M A M
2 PL
DETAIL A (ROTATED 90°)
SECTION A-A
0° - 5°
L1
L4
M
c1
c
b1
b
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.160 0.190 4.064 4.826
b 0.020 0.039 0.508 0.990
b1 0.020 0.035 0.508 0.889
b2 0.045 0.055 1.143 1.397
c* Thin lead 0.013 0.018 0.330 0.457
Thick lead 0.023 0.028 0.584 0.711
c1 Thin lead 0.013 0.017 0.330 0.431
Thick lead 0.023 0.027 0.584 0.685
c2 0.045 0.055 1.143 1.397
D 0.340 0.380 8.636 9.652
D1 0.220 0.240 5.588 6.096
D2 0.038 0.042 0.965 1.067
D3 0.045 0.055 1.143 1.397
D4 0.044 0.052 1.118 1.321
E 0.380 0.410 9.652 10.414
E1 0.245 - 6.223 -
E2 0.355 0.375 9.017 9.525
E3 0.072 0.078 1.829 1.981
e 0.100 BSC 2.54 BSC
K 0.045 0.055 1.143 1.397
L 0.575 0.625 14.605 15.875
L1 0.090 0.110 2.286 2.794
L2 0.040 0.055 1.016 1.397
L3 0.050 0.070 1.270 1.778
L4 0.010 BSC 0.254 BSC
M - 0.002 - 0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843
AN826
Vishay Siliconix
Document Number: 73397
11-Apr-05
www.vishay.com
1
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.635
(16.129)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.420
(10.668)
0.355
(9.017)
0.145
(3.683)
0.135
(3.429)
0.200
(5.080)
0.050
(1.257)
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Revision: 01-Jan-2021 1Document Number: 91000
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