2SK2688-01
N-channel MOS-FET
FAP-IIS Series 30V 0,017Ω ±50A 60W
>Features > Outline Drawing
-High Speed Switching
-Low On-Resistance
-No Secondary Breakdown
-Low Driving Power
-High Voltage
-VGS = ± 30V Guarantee
-Repetitive Avalanche Rated
>Applications
-Switching Regulators
-UPS
-DC-DC converters
-General Purpose Power Amplifier
>Maximum Ratings and Characteristics > Equivalent Circuit
-Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage VDS 30 V
Continous Drain Current ID±50 A
Pulsed Drain Current ID(puls) ±200 A
Gate-Source-Voltage VGS ±16 V
Max. Avalanche Energy EAV 520 mJ
Max. Power Dissipation PD60 W
Operating and Storage Temperature Range Tch 150 °C
T
stg
-55 ~ +150
°C
L=0.277mH,Vcc=12V
-
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage BV DSS ID=1mA VGS=0V 30 V
Gate Threshhold Voltage VGS(th) ID=1mA VDS=VGS 1,0 1,5 2,0 V
Zero Gate Voltage Drain Current IDSS VDS=30V Tch=25°C 10 500 µA
VGS=0V Tch=125°C 0,2 1,0 mA
Gate Source Leakage Current IGSS VGS=±16V VDS=0V 10 100 nA
Drain Source On-State Resistance RDS(on) ID=25A VGS=4V 0,012 0,017 Ω
ID=25A VGS=10V 0,0075 0,01 Ω
Forward Transconductance gfs ID=25A VDS=25V 22 45 S
Input Capacitance Ciss VDS=25V 2750 4130 pF
Output Capacitance Coss VGS=0V 1300 1950 pF
Reverse Transfer Capacitance Crss f=1MHz 600 900 pF
Turn-On-Time ton (ton=td(on)+tr)td(on) VCC=15V 13 20 ns
trID=50A 180 270 ns
Turn-Off-Time toff (ton=td(off)+tf)td(off) VGS=10V 55 83 ns
tfR
GS
=10
Ω
150 230 ns
Avalanche Capability IAV L = 100µH Tch=25°C 50 A
Diode Forward On-Voltage VSD IF=2xIDR VGS=0V Tch=25°C 1,14 1,71 V
Reverse Recovery Time trr IF=IDR VGS=0V 85 130 ns
Reverse Recovery Charge Qrr -dIF/dt=100A/µs Tch=25°C 0,17 µC
-Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance Rth(ch-c) channel to case 2,08 °C/W
Rth(ch-a) channel to air 125,0 °C/W
N-channel MOS-FET
2SK2688-01
30V
0,017Ω
±50A 60W
FAP-IIS Series
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
↑
ID=f(VDS); 80µs pulse test; TC=25°C
↑
RDS(on) = f(Tch): ID=25A; VGS=10V
↑
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
ID [A]
1
RDS(ON) [Ω]
2
ID [A]
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
↑
RDS(on)=f(ID); 80µs pulse test;TC=25°C
↑
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
↑
VGS(th)=f(Tch); ID=1mA; VDS=VGS
RDS(ON) [Ω]
4
gfs [S]
5
VGS(th) [V]
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
↑
C=f(VDS); VGS=0V; f=1MHz
↑
VGS=f(Qg): ID=50A; Tch=25°C
↑ ↑
IF=f(VSD); 80µs pulse test; Tch=25oC
C [F]
7
VDS [V]
8
VGS [V]
IF [A]
9
V
DS
[V]
→
Qg [nC]
→
V
SD
[V]
→
Avalanche Energy Derating
Safe operation area
E(AV)=f(starting Tch): Vcc=12V; IAV<=50A ID=f(VDS): D=0,01, Tc=25°C ↑
Zth(ch-c) [K/W]
Transient Thermal impedance
↑10 ↑12 Zthch=f(t) parameter:D=t/T
Eas [mJ]
ID [A]
Starting Tch [°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
N-channel MOS-FET
2SK2688-01
30V 0,017Ω ±50A 60W
FAP-IIS Series
> Characteristics
Typical Switching Characteristics
t [ns]
V
SD
[V]
→
This specification is subject to change without notice!
Power Dissipation
PD=f(TC)
0
25
50
75
100
125
0000000
TC [°C]
P
D / P
Dmax [%]
Maximum Avalanche Current vs. starting Tch
IAV=f(starting Tch)
0
20
40
60
80
100
120
0000000
