DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
L-BAND HIGH POWER SPDT SWITCH
GaAs INTEGRATED CIRCUIT
µ
PG2009TB
Document No. PG10191EJ02V0DS (2nd edition)
Date Published July 2004 CP(K)
Printed in Japan
DESCRIPTION
The
µ
PG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion
loss and high isolation by 2.8 V control voltage.
FEATURES
• Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• High isolation : ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• High power : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
• 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• L-band digital cellular or cordless telephone
• BuletoothTM, W-LAN and WLL applications
ORDERING INFORMATION
Part Number Package Marking Supplying Form
µ
PG2009TB-E3 6-pin super minimold G2U • Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PG2009TB
The mark shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2002, 2004
Data Sheet PG10191EJ02V0DS
2
µ
PG2009TB
PIN CONNECTIONS
Pin No. Pin Name
1 OUT1
2 GND
3 OUT2
4 Vcont2
5 IN
1
2
3
6
5
4
(Top View)
G2U
6
5
4
1
2
3
(Bottom View)
6 Vcont1
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Control Voltage 1, 2 Vcont1, 2 −6.0 to +6.0 Note V
Input Power Pin +36 dBm
Total Power Dissipation Ptot 0.15 W
Operating Ambient Temperature TA −45 to +85 °C
Storage Temperature Tstg −55 to +150 °C
Note Vcont1-Vcont2 ≤ 6.0 V
RECOMMENDED OPERATING RENGE (TA = +25°C)
Parameter Symbol MIN. TYP. MAX. Unit
Control Voltage (High) Vcont(H) +2.7 +2.8 +3.0 V
Control Voltage (Low) Vcont(L) −0.2 0 +0.2 V
Data Sheet PG10191EJ02V0DS 3
µ
PG2009TB
ELECTRICAL CHARACTERISTICS
(TA = +25°C, Vcont1 = 2.8 V, Vcont2 = 0 V or Vcont1 = 0 V, Vcont2 = 2.8 V, ZO = 50 Ω, Off chip DC blocking
capacitors value; 56 pF, unless otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Insertion Loss LINS f = 0.5 to 1.0 GHz − 0.25 0.45 dB
f = 2.0 GHz − 0.30 0.50 dB
f = 2.5 GHz − 0.40 − dB
Isolation ISL f = 0.5 to 2.0 GHz 24 28 − dB
f = 2.5 GHz − 25 − dB
Input Return Loss RLin f = 0.5 to 2.5 GHz 15 20 − dB
Output Return Loss RLout f = 0.5 to 2.5 GHz 15 20 − dB
Input Power at 0.1 dB
Compression Point Note
Pin(0.1 dB) f = 1.0 GHz,
Vcont = 2.8 V/0 V
32.5 34 − dBm
2nd Harmonics 2f0 f = 1.0 GHz, Vcont = 2.8 V/0 V,
Pin = 30.5 dBm
65 75 − dBc
3rd Harmonics 3f0 f = 1.0 GHz, Vcont = 2.8 V/0 V,
Pin = 30.5 dBm
65 75 − dBc
Switching Speed tSW − 150 − ns
Control Current Icont Vcont = 2.8 V/0 V, RF Non − 1 50
µ
A
Note Pin(0.1 dB) are measured the input power level when the insertion loss increase more 0.1 than that of linear
range. All other characteristics are measured in linear range.
Caution When the
µ
PG2009TB is used it is necessary to use DC blocking capacitors for No.1 (OUT1), No.3
(OUT2) and No.5 (IN). The value of DC blocking capacitors should be chosen to accommodate the
frequency of operation, bandwidth, switching speed and the condition with actual board of your
system.
The range of recommended DC blocking capacitor value is less than 100 pF.
Data Sheet PG10191EJ02V0DS
4
µ
PG2009TB
EVALUATION CIRCUIT
Vcont1 = 2.8 V, Vcont2 = 0 V or Vcont2 = 0 V, Vcont1 = 2.8 V, off chip DC blocking capacitors value C1 = 56 pF, C2
= 1 000 pF (Bypass), using NEC standard evaluation board.
1
2
3
6
5
4
Vcont2
IN
Vcont1
C2
C2
C1
C1
C1
OUT2
OUT1
G2U
EVALUATION BOARD
6pin SMM SPDT SW
V
cont2
C2
C2
G2U
C1
C1
C1
OUT2
OUT1
V
cont1
IN
NEC
TRUTH TABLE
Vcont1 Vcont2 IN−OUT1 IN−OUT2
Low High OFF ON
High Low ON OFF
Data Sheet PG10191EJ02V0DS 5
µ
PG2009TB
TYPICAL CHARACTERISTICS (TA = +25°C, Vcont1/2 = 2.8 V/0 V, Pin = 0 dBm, OUT2 side is 50 Ω
termination, unless otherwise specified)
Input Return Loss RL
in
(dB)
Frequency f
(GHz)
0
–20
–40
INPUT RETURN LOSS vs. FREQUENCY
START 0.500 000 000 GHz STOP 3.000 000 000 GHz
S
11
log MAGCH1 10 dB/ REF 0 dB
2: –30.339 dB
1.5 GHz
1: –25.43 dB
1.0 GHz
3: –30.025 dB
2.0 GHz
4: –23.812 dB
2.5 GHz
5: –17.85 dB
3.0 GHz
Insertion Loss L
INS
(dB)
Frequency f
(GHz)
0
–2.0
–4.0
INSERTION LOSS vs. FREQUENCY
START 0.500 000 000 GHz STOP 3.000 000 000 GHz
S
21
log MAGCH1 1 dB/ REF 0 dB
2: –0.744 dB
1.5 GHz
1: –0.620 dB
1.0 GHz
3: –0.881 dB
2.0 GHz
4: –1.057 dB
2.5 GHz
5: –1.302 dB
3.0 GHz
Isolation ISL (dB)
Frequency f
(GHz)
0
–20
–40
ISOLATION vs. FEQUENCY
START 0.500 000 000 GHz STOP 3.000 000 000 GHz
S
21
log MAGCH1 10 dB/ REF 0 dB
2: –28.871 dB
1.5 GHz
1: –28.787 dB
1.0 GHz
3: –27.75 dB
2.0 GHz
4: –24.902 dB
2.5 GHz
5: –21.582 dB
3.0 GHz
Output Return Loss RL
out
(dB)
Frequency f
(GHz)
0
–20
–40
OUTPUT RETERN LOSS vs. FREQUENCY
START 0.500 000 000 GHz STOP 3.000 000 000 GHz
S
22
log MAGCH1 10 dB/ REF 0 dB
2: –31.882 dB
1.5 GHz
1: –25.992 dB
1.0 GHz
3: –32.46 dB
2.0 GHz
4: –25.087 dB
2.5 GHz
5: –18.145 dB
3.0 GHz
11
1
3
3
1
23
4
5
2345
245
2
4
5
Caution These characteristics values include the losses of the NEC evaluation board.
Remark The graphs indicate nominal characteristics.
Data Sheet PG10191EJ02V0DS
6
µ
PG2009TB
TYPICAL CHARACTERISTICS
(f = 2 GHz, OUT2 side is 50 Ω termination, unless otherwise specified)
Input Power P
in
(dBm)
Insersion Loss L
INS
(dB)
0.5
0.6
25 27 29 31 33 35 37
0.4
0.3
0.2
0.1
0
RELATION BETWEEN CONTROL
VOLTAGE OF INSERSION LOSS
V
cont
= 2.4 V
V
cont
= 2.8 V
V
cont
= 3.2 V
26 28 30 32 34 36
0.7
0.8
0.9
Input Power P
in
(dBm)
2nd Harmonics 2f0 (dBc)
50
60
25 27 29 31 33 35 37
40
30
20
10
0
RELATION BETWEEN CONTROL
VOLTAGE OF 2nd HARMONICS
V
cont
= 2.4 V
V
cont
= 2.8 V
V
cont
= 3.2 V
26 28 30 32 34 36
70
80
90
Input Power P
in
(dBm)
3rd Harmonics 3f0 (dBc)
50
60
25 27 29 31 33 35 37
40
30
20
10
0V
cont
= 2.4 V
V
cont
= 2.8 V
V
cont
= 3.2 V
26 28 30 32 34 36
70
80
90
RELATION BETWEEN CONTROL
VOLTAGE OF 3rd HARMONICS
Remark The graphs indicate nominal characteristics.
Data Sheet PG10191EJ02V0DS 7
µ
PG2009TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
0.9±0.1
0.7
0 to 0.1
0.15
+0.1
–0.05
0.2
+0.1
–0.05
2.0±0.2
1.3
0.650.65
1.25±0.1
2.1±0.1
0.1 MIN.
Data Sheet PG10191EJ02V0DS
8
µ
PG2009TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
VPS Peak temperature (package surface temperature) : 215°C or below
Time at temperature of 200°C or higher : 25 to 40 seconds
Preheating time at 120 to 150°C : 30 to 60 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
VP215
Wave Soldering Peak temperature (molten solder temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating Peak temperature (pin temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10191EJ02V0DS 9
µ
PG2009TB
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
M8E 00. 4 - 0110
The information in this document is current as of July, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
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Customers must check the quality grade of each semiconductor product before using it in a particular
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•
•
•
•
•
•
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
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TEL: +852-3107-7303
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0406
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techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
For further information, please contact
µ
PG2009TB
SAFETY INFORMATION ON THIS PRODUCT
Caution GaAs Products The product contains gallium arsenide, GaAs.
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
To our customers,
Old Company Name in Catalogs and Other Documents
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companies. Therefore, although the old company name remains in this document, it is a valid
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Renesas Electronics website: http://www.renesas.com
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Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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