AP99T06AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Low On-resistance Fast Switching Characteristic RoHS Compliant & Halogen-Free BVDSS 60V RDS(ON) 4.2m ID G 135A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. G D TO-220(P) S Absolute Maximum Ratings Rating Units VDS Drain-Source Voltage Parameter 60 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current (Chip) 135 A 120 A 85 A 320 A Symbol ID@TC=25 Continuous Drain Current, V GS @ 10V ID@TC=100 Continuous Drain Current, V GS @ 10V 3 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 138.8 W PD@TA=25 Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 0.9 /W 62 /W 1 201108162 AP99T06AGP-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=40A - - 4.2 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 70 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=30A - 110 175 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 16 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 55 - nC 2 td(on) Turn-on Delay Time VDS=30V - 18 - ns tr Rise Time ID=30A - 57 - ns td(off) Turn-off Delay Time RG=1 - 40 - ns tf Fall Time VGS=10V - 22 - ns Ciss Input Capacitance VGS=0V - 4300 6880 pF Coss Output Capacitance VDS=25V - 820 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 510 - pF Rg Gate Resistance f=1.0MHz - 1.1 - Min. Typ. IS=40A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V - 56 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 105 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 120A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP99T06AGP-HF 350 250 10V 8.0V 7.0V ID , Drain Current (A) 300 250 200 6.0V 150 V G = 5.0V 100 200 10V 8.0V 7.0V 150 6.0V T C = 150 o C ID , Drain Current (A) o T C = 25 C 100 V G = 5.0V 50 50 0 0 0 8 16 24 32 0 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.4 1.6 I D =1mA I D =40A V G =10V 1.4 Normalized RDS(ON) Normalized BVDSS (V) 2.0 1.2 1 1.6 1.2 0.8 0.8 0.6 0.4 0.4 -50 0 50 100 -50 150 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 40 1.6 Normalized VGS(th) (V) I D =250uA IS(A) 30 20 T j =150 o C T j =25 o C 10 1.2 0.8 0.4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP99T06AGP-HF I D = 30 A V DS =48V 10 5000 C iss 8 4000 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 6000 12 6 3000 4 2000 2 1000 0 C oss C rss 0 0 40 80 120 160 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 1000 Operation in this area limited by RDS(ON) ID (A) 100 100us 1ms 10ms 10 100ms DC o T c =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4