Description
This laser module contains an
Alcatel SLMQW DFB laser with
25 impedance matchi ng
designed for use in Wavelength
Division Multiplexed (WDM)
systems, high power direct
modulation operations up to
2.5 Gbit/s. The module
incorporates a thermoele ctric
cooler, precision the rmistor, and
optical isolator for stable
operation under all conditions.
Features
2 mW output power
Low dispersion penalty
Optimized for direct
modulation at 2.5 Gbit/s
Wavelength selection
according to ITU-T G.692
from 1528.77 nm to
1570.42 nm
100 GHz spacing available
Internal optical isolator
25 RF impedance matchi ng
and DC bias RF filtering
Industry - standard hermetic
14-pin butterfly package
InGaAsP Distributed Feed Back
SLMQW (DFB) laser
Applications
EDFA - free long span STM-16
and OC-48 DWDM
transmission systems
High-sp eed DW DM
Metropolitan Area Networks
Saturation Laser for WDM
EDFA
Instrumentation
A
lcatel 1915 L MI
1.55 µm WDM Direct Modulation Laser Module
2mW
Description....................................................1
Features ........................................................1
A
pplications...................................................1
Electro-Opto Characteristics...........................2
Definitions.....................................................3
Mechanical details.........................................4
Pin out...........................................................4
Marking, packing and deliverable data ..........5
Safety and handling.......................................5
Ordering information.....................................6
Electro-Opto Characteristics
Unless otherwise stated : BOL, Tcase = 25°C and Tsubmount = 25°C
Table 1
Parameter Sym Conditions Min Typical Max Units
Fiber-Coupled Peak Power Ppeak @Twave 2 - mW
Threshold current ITH @Twave 3 25 mA
External Diff. Efficiency η@Twave 0.045 0.062 W/A
Laser forward voltage VF@PPeak =2 mW ; pin 11 & 3 - 2.5 V
Modulation current BOL IF@ PPeak = 2 mW ; pin 11 & 3
Note 1 -45mA
Serial resistance RSPpeak=2mW; pi n 11 t o 12 22 27
(Emitted -Target
Wavelength) ∆λe@Twave
See Table 4 for λtarget
-0.1 +0.1 nm
Emission wavelength λSee table 4 1529 1570 nm
Side mode suppression SMSR @Twave ; Note 2 40 - dB
Photodiode current IPD V= -5V,@Pmean, Note 5 30 300 µA
Photodiode Dark Current IDV = -5 V 0.1 µA
Photodiode Capacitance CMV = -5V, @ 1MHz 15 pF
Thermistor resistan ce RTH 9.7 10.3 k
Coefficient of RTH -3 -5 %/°K
Emitted λ drift vs IF∆λ/I - 3 6 pm/mA
Emitted λ drift vs Twave ∆λ/Tw 20°C Tsubmount 35°C 80 100 pm/°C
Emitted λ drift vs Tcase ∆λ/Tc 0°C Tc 70°C -0.5pm/°C
Relative Int ensity Noise RIN 100 MHz to 3 GHz @Pmean -140 dB/Hz
Dispersion Penalty Note 2 SD = 1800 ps/nm, Note 2 - 2 d B
Linearity (kink) Note 3 P/I 0.2 mW PPeak 2 mW 15 %
Optical Isolation OI 0°C Tc 70°C 30 - dB
Tracking Error Note 4 Q @2 mW PPeak 10 %
Extinction ratio ER 2.5Gb/s,D=1800p s/nm , PR BS 2 23-1 10 dB
Case Operating
Temperature Tc 0 70 °C
Tsubmount Ts 20 35 °C
TEC current EOL It@I(2mW), Ts = 20°C, Tc = 70°C - 1.2 A
TEC voltage EOL Vt@I(2mW), Ts = 20°C, Tc = 70°C - 2.4 V
Note 1: Modulation current = PPeak /η * [ (1 – E R) / (1+ER) ]
End Of Life criteria; delta IF/IF = 20 % or delta I M / IM = 20% or delta ITH / ITH = 20%
Note 2 : 2.488 Gb/s, P Mean, BER = 10-10, ER = 10±1%, NRZ line code
Note 3 : relative deviation of dP / dI between 2 consecutive measurement points
Note 4 : Q = Max { | [P(70 C) - P(25 C)] / P(25 C) | ; | [P(0 C) - P(25 C)] / P(25 C) | }
measurements @ 0 & 70°C are with IF set at constant IF (25 C)
Note 5 : Pmean=Ppeak/2
Definitions
Twave
Twave is the submount temperature at which the laser emission wavelength reaches the target wavelength with
an accuracy of better than: λ target ± 0.1nm.
This temperature is calculated during manufacturing according to:
Twave = 25°C + (1/C)*(λ target - λ 25°C), where C is the laser wavelength drift with temperature (in nm/°C).
Emitted wavelength drift vs Tcase
Absolute value of maximum emitted wavelength deviation per unit of case temperature (°C) when Tcase varies
from min to max operating conditions.
Wavelength is stabilized through the thermal regulation of the laser chip based on the thermistor reading.
Emitted wavelength drift vs Laser Curre nt
Maximum emitted wavelength deviation per unit of laser current (mA) when the DC output power varies
around Pmean.
Absolute maximum ratings
Exposing the device to stresses above those listed in absolute maximum rating could cause permanent
damage.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Environmental
Table 2
Parameters Min Max Unit
Storag e tempera t u r e - 40 85 °C
Operating temperature -10 70 °C
Solderin g temper a t ure (3 seconds maxim u m ) 350 °C
Axial force on fiber (10 seconds max.) 10 N
Fiber bend radius 30 mm
ESD (1) applied on PIN detector (Pin 4&5) 100 V
ESD (1) on other Pin 2000 V
(1) Human body model
Electro-optic
Table 3
Parameters Min Max Unit
Laser forward current 150 mA
Laser reverse voltage 2 V
Photodiode forward current 1 mA
Photodiode reverse voltage 20 V
Thermistor Voltage 9 V
Thermistor Current 250 µA
TEC Voltage 2.8 V
TEC Current 1.4 A
Packing Mounting Torque 0.2 N.m
Mechanical details
Note : all dimensions in mm
Pin out
Description N° Description
1 Thermistor 8 Case Ground
2 Thermistor 9 Case Ground
3 Laser DC bias (-) 10 Not Connected
4 Photodetector Anode (-) 11 RF common (+)
5 Photodetector Cathode (+) 12 Laser Modulation (-)
6 TEC (+) 13 RF common (+)
7 TEC (-) 14 Not Connected
PD
TEC
LD
20
7654321
TS
8 9 1011121314
200 nH 10 K
pigtail
Marking, packing and deliverable data
Device marking
Each device includes the following information as a minimum:
1. Alcatel logo
2. Product fam ily name: A 1915 LMI
3. Product cod e : 3CN 00492 XX
4. Serial n umber
Packing
Each device is individually packed in an antistatic container and in such a manner as to prevent damage in
transit.
The packaging shall include the following information:
1. Alcatel logo
2. Product fam ily name: A 1915 LMI
3. Product cod e : 3CN 00492 XX
4. Serial n umber
5. Hazard warning label (ESD)
6. Laser Safety Class Label
Deliverable data
The following data shall be supplied with each device:
1. L(I)/V(I) curves @ Tcase/ Tsubmount = 25°C/25°C
2. TEC @ Tcase/Tsubmou nt =25°C/75°C, P=2m W
3. Values of Twave and Thermistor @ Tsubmount =Twave
4. Values of laser forward current, monitoring photocurrent, laser threshold current and external differential
efficiency @ Tsubmount =Twave
5. Peak wavelength at Tcase/Tchip=25°C and under modulation
6. Dispersion penalt y
Product testing shall be carried out at a level that ensures conformity to the customer specification
Safety and handling
Safety and IEC.825 Classification
Take app r o p r i a t e precau tions t o p r ev en t und u e exp o sure to n a ked eye.
This product is classified Class 3A Laser Product according to IEC.825
Handling
This product, in line with all similar devices, is sensitive to electrostatic discharge. Take precautions to prevent
ESD; use wrist straps, grounded work surfaces and recognized anti-static techniques when handling the laser.
Handle the laser module by its package only, never hold it by leads or pigtail.
For package mounting the following procedure should be carefully followed:
1. In order to achieve the ultimate thermal performance of the device, thermal paste can be usefully added
on the support
2. Tighten screws up t o 200 m N/m - Do not exceed this mounting torque.
3. Assure that the leads are aligned and in contact with appropriate contact pads.
Care should be taken to avoid supply transient and over voltage. Over voltage above the maximum
specified in absolute maximum rating section (table 3) may cause permanent damage to the device.
ATTENTION
OBSERVE
PRECAUTIONS FOR
HANDLING
ELECTROSTATIC
DISCHARGE
SENSITIVE DEVICES
LASER RAD IATION
AVOID EXPOSURE TO BEAM
Class 3 A l a ser pr oduct
Ordering information
Alcatel 1915 LMI
Nominal power Connector type Part num ber
2 mW FC/PC 3CN 00492 ##
## defines the wavelength and the connector according to
the following table .
Table 4
λ
λλ
λ
(1)
(1)(1)
(1) THz Connector
FC/PC λ
λλ
λTHz Connector
FC/PC
1528,77 196,10 BM 1550,12 193,40 DT
1529,55 196,00 BP 1550,92 193,30 DV
1530,33 195,90 BR 1551,72 193,20 DX
1531,12 195,80 BT 1552,52 193,10 DZ
1531,90 195,70 BV 1553,33 193,00 EB
1532,68 195,60 BX 1554,12 192,90 ED
1533,47 195,50 BZ 1554,94 192,80 EF
1534,25 195,40 CB 1555,75 192,70 EH
1535,04 195,30 CD 1556,55 192,60 EK
1535,82 195,20 CF 1557,36 192,50 EM
1536,61 195,10 CH 1558,17 192,40 EP
1537,40 195,00 CK 1558,98 192,30 ER
1538,19 194,90 CM 1559,79 192,20 ET
1538,98 194,80 CP 1560,61 192,10 EV
1539,77 194,70 CR 1561,42 192,00 EX
1540,56 194,60 CT 1562,23 191,90 EZ
1541,35 194,50 CV 1563,05 191,80 FB
1542,14 194,40 CX 1563,86 191,70 FD
1542,94 194,30 CZ 1564,68 191,60 FF
1543,73 194,20 DB 1565,49 191,50 FH
1544,53 194,10 DD 1566,31 191,40 FK
1545,32 194,00 DF 1567,13 191,30 FM
1546,12 193,90 DH 1567,95 191,25 FP
1546,92 193,80 DK 1568,77 191,20 FS
1547,72 193,70 DM 1569,59 191,15 FU
1548,51 193,60 DP 1570,42 191,10 FW
1549,32 193,50 DR
(1) in vacuum
October 2001
Copyright © 2000
Alcatel Optronics
Customized versions are available
for large quantities.
Performance figures contained in
this document must be specifically
confirmed in writing by Alcatel
Optronics before they become
applicable to any particular order
or contract. Alcatel Optronics
reserves the right to make changes
to the products or information
contained herein without notice.
EUROPE
Route de Ville just
F-91625 NOZAY CEDEX
Tel : (+33) 1 64 49 49 10
Fax : (+33) 1 64 49 49 61
USA
15036, Conference Centre Drive
CHANTILLY - VA 20151
Tel : (+1) 703 679 3600
Fax : (+1) 703 679 6667
CANADA
45, De Villebois, suite 200
Gatineau (PQ)
Canada, J8T 8J7
Tel : (+1) 819 243 3755
Fax : (+1) 819 243 3354
JAPAN
Dai-Tokyo Kasai
Shinjuku Building 13F
3-25-3, Yoyogi, Shibuya-Ku
Tokyo 151 – 0053 – Japan
Tel : (+81) 3 5302 4341
Fax : (+81) 3 5302 4331