IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22 1
Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES AUGUST 1995
1995 Integrated Device Technology, Inc. 6.22 DSC-4217/5
FAST CMOS 10-BIT
BUFFERS
DESCRIPTION:
The FCT827T is built using an advanced dual metal CMOS
technology.
The FCT827T/FCT2827T 10-bit bus drivers provide high-
performance bus interface buffering for wide data/address
paths or buses carrying parity. The 10-bit buffers have NAND-
ed output enables for maximum control flexibility.
All of the FCT827T high-performance interface family are
designed for high-capacitance load drive capability, while
providing low-capacitance bus loading at both inputs and
outputs. All inputs have clamp diodes to ground and all outputs
are designed for low-capacitance bus loading in high-imped-
ance state.
The FCT2827T has balanced output drive with current
limiting resistors. This offers low ground bounce, minimal
undershoot and controlled output fall times-reducing the need
for external series terminating resistors. FCT2827T parts are
plug-in replacements for FCT827T parts.
1
IDT54/74FCT827AT/BT/CT/DT
IDT54/74FCT2827AT/BT/CT
FEATURES:
• Common features:
– Low input and output leakage ≤1µA (max.)
– CMOS power levels
– True TTL input and output compatibility
– VOH = 3.3V (typ.)
– VOL = 0.3V (typ.)
– Meets or exceeds JEDEC standard 18 specifications
– Product available in Radiation Tolerant and Radiation
Enhanced versions
– Military product compliant to MIL-STD-883, Class B
and DESC listed (dual marked)
– Available in DIP, SOIC, SSOP, QSOP, CERPACK
and LCC packages
• Features for FCT827T:
– A, B, C and D speed grades
– High drive outputs (-15mA IOH, 48mA IOL)
• Features for FCT2827T:
– A, B and C speed grades
– Resistor outputs (-15mA IOH, 12mA IOL Com.)
(-12mA IOH, 12mA IOL Mil.)
– Reduced system switching noise
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
2573 drw 01
D0D1D2D3D4D5D6D7D8D9OE1OE2
Y0Y1Y2Y3Y4Y5Y6Y7Y8Y9
FUNCTIONAL BLOCK DIAGRAM
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22 2
PIN CONFIGURATIONS
DIP/SOIC/SSOP/QSOP/CERPACK
TOP VIEW
2573 drw 02 2573 drw 03
LCC
TOP VIEW
OE1
D0
D1
D2
D3
D4
D5
D6
D7
Y0
Y1
Y2
Y3
Y4
Y6
Y5
Y7
VCC1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
P24-1
D24-1
SO24-2
SO24-7
SO24-8
&
E24-1
11
12
21
22
23
24
D8
D9
Y8
Y9
OE2GND
INDEX
D
2
Y
2
Y
3
Y
4
NC
Y
5
OE
1
D
1
NC
V
CC
Y
0
D
8
GND
OE
2
Y
9
Y
8
32
20
19
1
4
5
6
7
8
1817161514
9
10
11
1213
L28-1
D3
D
4
NC
D
5
D
6
D
7
D
0
Y
1
Y
6
Y
7
21
22
23
24
25
262728
D
9
NC
PIN DESCRIPTION
2573 tbl 01
Names I/O Description
OE
II When both are LOW the outputs are
enabled. When either one or both are
HIGH the outputs are High Z.
DI I 10-bit data input.
YI O 10-bit data output.
CAPACITANCE (TA = +25°C, f = 1.0MHz)ABSOLUTE MAXIMUM RATINGS(1)
Symbol Rating Commercial Military Unit
VTERM(2) Terminal Voltage
with Respect to
GND
–0.5 to +7.0 –0.5 to +7.0 V
VTERM(3) Terminal Voltage
with Respect to
GND
–0.5 to
VCC +0.5 –0.5 to
VCC +0.5 V
TAOperating
Temperature 0 to +70 –55 to +125 °C
TBIAS Temperature
Under Bias –55 to +125 –65 to +135 °C
TSTG Storage
Temperature –55 to +125 –65 to +150 °C
PTPower Dissipation 0.5 0.5 W
IOUT DC Output
Current –60 to +120 –60 to +120 mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
VCC by +0.5V unless otherwise noted.
2. Input and VCC terminals only.
3. Outputs and I/O terminals only.
2573 lnk 03
Symbol Parameter(1) Conditions Typ. Max. Unit
CIN Input
Capacitance VIN = 0V 6 10 pF
COUT Output
Capacitance VOUT = 0V 8 12 pF
NOTE:
1. This parameter is measured at characterization but not tested. 2573 lnk 04
Inputs Output
OE
OE
1
OE
OE
2DIYIFunction
L
LL
LL
HL
HTransparent
H
XX
HX
XZ
ZThree-State
NOTE:2573 tbl 02
1. H = HIGH, L = LOW, X = Don’t Care, Z = High Impedance
FUNCTION TABLE(1)
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22 3
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
Symbol Parameter Test Conditions(1) Min. Typ.(2) Max. Unit
VIH Input HIGH Level Guaranteed Logic HIGH Level 2.0 — — V
VIL Input LOW Level Guaranteed Logic LOW Level — — 0.8 V
II H Input HIGH Current(4) VCC = Max. VI = 2.7V — — ±1µA
II L Input LOW Current(4) VI = 0.5V — — ±1
IOZH High Impedance Output Current VCC = Max. VO = 2.7V — — ±1µA
IOZL (3-State Output pins)(4) VO = 0.5V — — ±1
II Input HIGH Current(4) VCC = Max., VI = VCC (Max.) — — ±1µA
VIK Clamp Diode Voltage VCC = Min., IIN = –18mA — –0.7 –1.2 V
VHInput Hysteresis — — 200 — mV
ICC Quiescent Power Supply Current VCC = Max., VIN = GND or VCC — 0.01 1 mA
2573 lnk 05
OUTPUT DRIVE CHARACTERISTICS FOR FCT2827T
2573 lnk 07
Symbol Parameter Test Conditions
(1)
Min. Typ.
(2)
Max.
Unit
I
ODL
Output LOW Current V
CC
= 5V, V
IN
= V
IH
or
V
IL,
V
OUT
= 1.5V
(3)
16 48 —mA
I
ODH
Output HIGH Current V
CC
= 5V, V
IN
= V
IH
or V
IL,
V
OUT
= 1.5V
(3)
–16 –48 —mA
V
OH
Output HIGH Voltage V
CC
= Min.
V
IN
= V
IH
or
V
IL
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L. 2.4 3.3 — V
V
OL
Output LOW Voltage V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OL
= 12mA — 0.3 0.50 V
2573 lnk 06
Symbol Parameter Test Conditions
(1)
Min. Typ.
(2)
Max.
Unit
V
OH
Output HIGH Voltage V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= –6mA MIL.
I
OH
= –8mA COM'L. 2.4 3.3 — V
I
OH
= –12mA MIL.
I
OH
= –15mA COM'L. 2.0 3.0 — V
V
OL
Output LOW Voltage V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OL
= 32mA MIL.
I
OL
= 48mA COM'L. — 0.3 0.5 V
I
OS
Short Circuit Current V
CC
= Max., V
O
= GND
(3)
–60 –120 –225 mA
OUTPUT DRIVE CHARACTERISTICS FOR FCT827T
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is ±5µA at TA = –55°C.
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22 4
POWER SUPPLY CHARACTERISTICS
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient.
3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the ICC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi)
ICC = Quiescent Current
∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fCP = Clock Frequency for Register Devices (Zero for Non-Register Devices)
fi = Input Frequency
Ni = Number of Inputs at fi
All currents are in milliamps and all frequencies are in megahertz.
2573 tbl 08
Symbol Parameter Test Conditions(1) Min. Typ.(2) Max. Unit
∆ICC Quiescent Power Supply Current
TTL Inputs HIGH VCC = Max.
VIN = 3.4V(3) — 0.5 2.0 mA
ICCD Dynamic Power Supply Current(4) VCC = Max.
Outputs Open VIN = VCC
VIN = GND FCT827T — 0.15 0.25 mA/
MHz
OE
1 =
OE
2 = GND
One Input Toggling
50% Duty Cycle
FCT2827T — 0.06 0.12
ICTotal Power Supply Current(6) VCC = Max. VIN = VCC FCT827T — 1.5 3.5 mA
Outputs Open
fi = 10MHz VIN = GND FCT2827T — 0.6 2.2
50% Duty Cycle VIN = 3.4V FCT827T — 1.8 4.5
OE
1 =
OE
2 = GND
One Bit Toggling VIN = GND FCT2827T — 0.9 3.2
VCC = Max. VIN = VCC FCT827T — 3.0 6.0(5)
Outputs Open
fi = 2.5MHz VIN = GND FCT2827T — 1.2 3.4(5)
50% Duty Cycle VIN = 3.4V FCT827T — 5.0 14.0(5)
OE
1 =
OE
2 = GND
Eight Bits Toggling VIN = GND FCT2827T — 3.2 11.4(5)
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22 5
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
FCT827AT/FCT2827AT FCT827BT/FCT2827BT
Com'l. Mil. Com'l. Mil.
Symbol Parameter Condition(1) Min.(2) Max. Min.(2) Max. Min.(2) Max. Min.(2) Max. Unit
tPLH
tPHL Propagation Delay
DI to YICL = 50pF
RL = 500Ω1.5 8.0 1.5 9.0 1.5 5.0 1.5 6.5 ns
CL = 300pF(3)
RL = 500Ω1.5 15.0 1.5 17.0 1.5 13.0 1.5 14.0
tPZH
tPZL Output Enable Time
OE
I to YICL = 50pF
RL = 500Ω1.5 12.0 1.5 13.0 1.5 8.0 1.5 9.0 ns
CL = 300pF(3)
RL = 500Ω1.5 23.0 1.5 25.0 1.5 15.0 1.5 16.0
tPHZ
tPLZ Output Disable Time
OE
I to YICL = 5pF(3)
RL = 500Ω1.5 9.0 1.5 9.0 1.5 6.0 1.5 7.0 ns
CL = 50pF
RL = 500Ω1.5 10.0 1.5 10.0 1.5 7.0 1.5 8.0
2573 tbl 09
NOTES:2573 tbl 10
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These conditions are guaranteed but not tested.
FCT827CT/FCT2827CT FCT827DT
Com'l. Mil. Com'l. Mil.
Symbol Parameter Condition(1) Min.(2) Max. Min.(2) Max. Min.(2) Max. Min.(2) Max. Unit
tPLH
tPHL Propagation Delay
DI to YICL = 50pF
RL = 500Ω1.5 4.4 1.5 5.0 1.5 3.8 — — ns
CL = 300pF(3)
RL = 500Ω1.5 10.0 1.5 11.0 1.5 7.5 — —
tPZH
tPZL Output Enable Time
OE
I to YICL = 50pF
RL = 500Ω1.5 7.0 1.5 8.0 1.5 5.0 — — ns
CL = 300pF(3)
RL = 500Ω1.5 14.0 1.5 15.0 1.5 9.0 — —
tPHZ
tPLZ Output Disable Time
OE
I to YICL = 5pF(3)
RL = 500Ω1.5 5.7 1.5 6.7 1.5 4.3 — — ns
CL = 50pF
RL = 500Ω1.5 6.0 1.5 7.0 1.5 4.3 — —
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22 6
TEST CIRCUITS AND WAVEFORMS
TEST CIRCUITS FOR ALL OUTPUTS
ENABLE AND DISABLE TIMESPROPAGATION DELAY
SWITCH POSITION
Pulse
Generator
R
T
D.U.T.
V
CC
V
IN
C
L
V
OUT
50pF 500
Ω
500
Ω
7.0V
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
DATA
INPUT
TIMING
INPUT
ASYNCHRONOUS CONTROL
PRESET
CLEAR
ETC.
SYNCHRONOUS CONTROL
t
SU
t
H
t
REM
t
SU
t
H
HIGH-LOW-HIGH
PULSE
LOW-HIGH-LOW
PULSE
t
W
1.5V
1.5V
SAME PHASE
INPUT TRANSITION
3V
1.5V
0V
1.5V
V
OH
t
PLH
OUTPUT
OPPOSITE PHASE
INPUT TRANSITION
3V
1.5V
0V
t
PLH
t
PHL
t
PHL
V
OL
CONTROL
INPUT
3V
1.5V
0V
3.5V
0V
OUTPUT
NORMALLY
LOW
OUTPUT
NORMALLY
HIGH
SWITCH
CLOSED
SWITCH
OPEN
V
OL
0.3V
0.3V
t
PLZ
t
PZL
t
PZH
t
PHZ
3.5V
0V
1.5V
1.5V
ENABLE DISABLE
V
OH
PRESET
CLEAR
CLOCK ENABLE
ETC.
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-
HIGH
2. Pulse Generator for All Pulses: Rate ≤ 1.0MHz; tF ≤ 2.5ns; tR ≤ 2.5ns
Test
Switch
Disable Low
Enable Low
Closed
All Other Tests Open
Open Drain
2573 lnk 11
DEFINITIONS:
CL= Load capacitance: includes jig and probe capacitance.
RT =Termination resistance: should be equal to ZOUT of the Pulse
Generator.
SET-UP, HOLD AND RELEASE TIMES PULSE WIDTH
2573 drw 04
2573 drw 05
2573 drw 06
2573 drw 07
2573 drw 08
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22 7
ORDERING INFORMATION
IDT XX FCT XX
Device Type X
Package X
Process
Blank
B
P
D
E
L
SO
PY
Q
827AT
827BT
827CT
827DT
Commercial
MIL-STD-883, Class B
Plastic DIP
CERDIP
CERPACK
Leadless Chip Carrier
Small Outline IC
Shrink Small Outline Package
Quarter-size Small Outline Package
Non-Inverting 10-Bit Buffer
54
74 –55°C to +125°C
0°C to +70°C
Temp. Range X
Family
Blank
2High Drive
Balanced Drive
2573 drw 09
