©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD440/442
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD440
: BD442 - 60
- 80 V
V
VCES Collector-Emitter Voltage: BD440
: BD442 - 60
- 80 V
V
VCEO Collector-Emitter Voltage: BD440
: BD442 - 60
- 80 V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 4 A
ICP *Collector Current (Pulse) - 7 A
IB Base Current - 1 A
PC Collector Dissipation (TC=25°C) 36 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 1 50 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector- Emitter Sust ainin g Voltage
: BD440
: BD442 IC = - 100mA, IB = 0 -60
-80 V
V
ICBO Collector Cut-off Current : BD440
: BD442 VCB = - 6 0V, IE = 0
VCB = - 8 0V, IE = 0 - 100
- 100 µA
µA
ICES Collector Cut-off Current : BD440
: BD442 VCE = - 6 0V, VBE = 0
VCE = - 8 0V, VBE = 0 - 100
- 100 µA
µA
IEBO Emitter Cut-off Current VEB = - 5V, I C = 0 - 1 mA
hFE * DC Current Gain : BD440
: BD442
: BD440
: BD442
: BD440
: BD442
VCE = - 5 V, I C = - 10 mA
VCE = - 1V, IC = - 500mA
VCE = - 1 V, I C = - 2A
20
15
40
40
25
15
140
140
140
140
VCE(sat) * Collector-Emitter Saturation V oltage IC = - 2A, IB = - 0.2A - 0.8 V
VBE(on) * Base-Emitter ON Voltage VCE = - 5 V, I C = - 10mA
VCE = -1 V, I C = - 2A -0.58 - 1.5 V
V
fT Current G ain Bandwidth Product VCE = - 1V, IC = - 250mA 3 MHz
BD440/442
Medium Power Linear and Switching
Applications
• Complement to BD439, BD441 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
BD440/442
Rev. A1, June 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Collector-Base Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -1V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.01
-0.1
-1
IC = 10 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.0 -0.3 -0.5 -0.8 -1.0 -1.3 -1.5 -1.8 -2.0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
VCE = -1V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
1000
CCBO(pF), COLLECTOR BASE CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
-1 -10 -100
-0.1
-1
-10
1µs
10µs
100
µ
s
1ms
10ms
IC MAX. (Pulsed)
BD442
BD440
DC
IC Max. (Continuous)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
0 25 50 75 100 125 150 175 200
0
6
12
18
24
30
36
42
48
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
BD440/442
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. H2
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