A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 200 mA 35 V
BVCES IC = 200 mA 65 V
BVEBO IE = 10 mA 4.0 V
ICBO VCB = 30 V 2.0 mA
hFE VCE = 5.0 V IC = 500 mA 10 150 ---
Cob VCB = 28 V f = 1.0 MHz 80 pF
PG
η
ηη
ηC VCE = 28 V POUT =50 W f = 175 MHz
PIN = 12 W
6.0 60 dB
%
NPN SILICON RF POWER TRANSISTOR
VHB50-28F
DESCRIPTION:
The ASI VHB50-28F is an NPN
power transistor designed for 28 V
Class-C gr ound st ation transmitter s , it
utilizes emitter ballasting and gold
metallization t o pr ovide optimum
VSWR capability.
FEATURES:
• Common Emitter
• PG = 6.0 dB at 50 W/175 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 6.5 A
VCBO 65 V
VCEO 35 V
VEBO 4.0 V
PDISS 75W
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 2.3 °C/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10728
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
C
B
E
E
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2
ERROR! REFERENCE SOURCE NOT FOUND.
Specif i cations are subj ect to change wi thout notice.
VHB50-28F
IMPEDANCE DATA
FREQ. ZIN (Ω) ZCL (Ω)
150 MHz 1.0 + j2.0 4.0 – j3.69
POUT = 60 W
VCE = 28 V
