AP9575GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS -60V Simple Drive Requirement RDS(ON) 70m ID Fast Switching Characteristic G D S -16A TO-220CFM(I) Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, VGS @ 10V -16 A ID@TC=100 Continuous Drain Current, VGS @ 10V -10 A 1 IDM Pulsed Drain Current -60 A PD@TC=25 Total Power Dissipation 31.3 W Linear Derating Factor 0.25 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 4.0 /W 65 /W 1 200902093 AP9575GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A - - 70 m VGS=-4.5V, ID=-8A - - 90 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-9A - 14 - S IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -10 uA Drain-Source Leakage Current (T j=125 C) VDS=-48V, VGS=0V - - -250 uA Gate-Source Leakage VGS= +20V,VDS=0V - - +100 nA ID=-9A - 14 27 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-48V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8 - nC VDS=-30V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-9A - 17 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 36 - ns tf Fall Time RD=3.3 - 41 - ns Ciss Input Capacitance VGS=0V - 1100 2800 pF Coss Output Capacitance VDS=-25V - 115 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF Min. Typ. IS=-10A, VGS=0V - - -1.3 V IS=-9A, VGS=0V, - 38 - ns dI/dt=-100A/s - 61 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9575GI 40 50 -10V - 7 .0V T C = 25 o C -10V -7.0V. -5.0V T C =150 o C -5.0V -ID , Drain Current (A) -ID , Drain Current (A) 40 -4.5V 30 20 30 -4.5V 20 10 10 V G = -3.0V V G = -3.0 V 0 0 0 4 8 12 0 Fig 1. Typical Output Characteristics 12 2.0 I D = - 10 A V G = -10V Normalized RDS(ON) I D = -8 A T C =25 80 RDS(ON) (m ) 8 Fig 2. Typical Output Characteristics 90 70 1.6 1.2 0.8 60 0.4 50 2 4 6 8 -50 10 0 50 100 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.5 8 1.3 Normalized -VGS(th) (V) -IS(A) 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 6 T j =150 o C T j =25 o C 4 150 1.1 0.9 0.7 2 0 0.5 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9575GI f=1.0MHz 10000 V DS = - 48 V ID= -9A 12 C iss 1000 C (pF) -VGS , Gate to Source Voltage (V) 15 9 6 C oss C rss 100 3 10 0 0 10 20 30 1 40 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 100us -ID (A) 10 1ms 10ms 100ms 1s DC 1 o T c =25 C Single Pulse Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 0 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off)tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4