SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE BVceEo hee Vce(saT) fr Ch @10V, Pr Device Type @10mA Typical 1 MHz @ 25C (Vv) Min.-Max. @ 1,Vc_(V) |(V) Max. @ Ic, Ig (MHz) Typical (Pf) (mW) 2N2711 2N2712 2N2713 2N2714 2N2923 soon 2N2924 2N2925 2N2926 2N3390 2N3391 DADAOG ~~ NS NS SI OS 2N3391A 2N3392 2N3393 2N3394 2N3395 DHHAOAD ~~ NSN 2N3396 2N3397 2N3398 2N3402 2N3403 aann ws 2N3404 2N3405 2N3414 2N3415 2N3416 oooag o 2N3417 2N3662 2N3663 2N3843 2N3843A NNwoOoM 2N3844 2N3844A 2N3845 2N3845A 2N3854 SNM NN = 2N3854A 2N3855 2N3855A 2N3856 2N3856A NANNN 2N3858 2N3858A 2N3859 2N3859A 2N3860 2N3877 2N3877A 2N3900 2N3900A 2N3901 www MN NNNNN 101 SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE BVcEO hee NE (v) Min.-Max. @1,Vce(V) (db) 2N3391A 5.0 . 2N3844 \ : " 10.2 2N3844A , : 8.5 2N3845 ae 10.2 2N3845A 8.5 Conditions Device Type 2N3900A 2N3901 2N5232A 2N5249A 2N5306A 2N5308A 2N5309 2N5310 2N5311 SILICON SIGNAL LOW NOISE AMPLIFIERS T0-92 PACKAGE BVcEO here NF Device Type (V) Min.-Max. @ Ico, VcE{V) (db) Conditions GES5827A GESS828A GES6000 GES6001 WWwon GES6004 GES6005 GES6010 GES6011 GES6014 WoW WwW GES6015 GES929 GES930 GES5306A GES5308A D3881-4 D38S87 D38S8-10 D38W8-10 D38W 13-14 GES6012 GES6013 GES6016 GES6017 109 Silicon a Go Transistors 2N3391,A The General Electric 2N3391 and 2N3391A are NPN silicon planar passivated devices intended for low noise preamplifier applications. The planar passivated construction assures excellent device stability and life. These high performance, high value transistors are made possible by utilizing advanced manufacturing techniques. absolute maximum ratings (25C) unless otherwise specified Voltages -205 _ Collector to Emitter Voxo 25 V 195 Emitter to Base Vupo 5 V 190 Collector to Base Vozo 25 V ke 165 + NOTE 1: Lead diameter is controlled in the Current O75 t zone between .070 and .250 from the seat- == Collector (Steady State) Io 100 mA ing plane. Between .250 and end of lead a oe 265 Dissipation max. of .021 is held. 225 Total Power (Free Air @ 25C) Pr 360 mW Ps | 500 SEATING Temperat ALL DIMEN. IN INCHES AND ARE MIN PLAN! , Storage Tis d55to +150 C REFERENCE UNLESS TOLERANCED ( |. 4 _ Operatin T, +125 C TO-98 |- - 050+ .005 Lead Soldering, \, + \, TL +260 C 4 | 190+ .008 from case for 10 seconds max. 3 LEADS _| L105 .090 Determined from power limitations due to saturation voltage at this current. O17 +002 *) Derate 3.6 mW/C increase in ambient temperautre above 25C. (NOTE 1) 140 0 electrical characteristics (25C) unless otherwise specified Min. Typ. Max. Collector Cutoff Current (Vcs = 25V) Tcxo al pA (Ves = 25V, T, = 100C) Tcpo 10 pA Emitter Cutoff Current (Vs = 6V) Tazo Al pA Forward Current Transfer Ratio (Vow = 4.5V, Io = 2 mA) hrx 250 500 SMALL SIGNAL CHARACTERISTICS Forward Current Transfer Ratio (Vos = 10V, Io = 100 pA, f = 1 KHz) hee 170 200 Input Impedance (Vos = = 10V, I = 2mA, f = 1 KHz) hip 15 ohms Output Capacitance (Ves = 10V, In = 0, f = 1 MHz) Coro 2.0 q 10 pF Gain Bandwidth Product (Ic =: 2 mA, Vos = 5 V) fr 120 MHz NOISE (wide band15 Hz to 10 KHz, Equivalent Noise Bandwidth = = 15.7 KHz) Noise rave = 100 uA, Vor = 4.5V, R, = 5000 ohms) NF 1.9 db @) T al aminimum of 95% of the distribution is above this value. 354 hee NORMALIZED TO 2mA, 25C TYPICAL CURVES ol 02 04 06.08.) 2 4 6 81 2 4 66810 20 Ig IN mA 1.024 06.08 1 2 4 6.84 2 4 6 810 20 Ig IN mA OlmA 2.0 20 Cobo AND CipoVS VOLTAGE 10 7 a f FIKHz Iepo VS TEMPERATURE / Ty225C cBoO 1 hee VS TEMPERATURE 6 Veg * 1BV z2mA, .imA,OlmA cB / 4 ra a g 2 = Oo { 2 2a 1.0 g 3 < z 2 z / a @ 1} 2 i, f. j 0.8 6 7 4 56 6 1 2 4 6 8 10 20 2 Vee of Veg IN VOLTS 25c Jl 20 40 60 80 100 TEMPERATURE IN*C 10K 1 2 3.45676 9 dbNOISE FIGURE 10.0 BK 8.0 6K 6.0 NORMALIZED h PARAMETERS VS Ig Ve l0v aK 4.0 f = IKHZ Ty = 25C 2K 2.0 10. B00 0.8 600 O6 04 02 SOURCE RESISTANCE Rg IN OHMS h PARAMETERS NORMALIZED TO O0.lmA too os h PARAMETERS AT I:0.lma 80 08 hie = 120K OMMS 60 06 26 MHOS 74 x1973 40 04 420 CONTOURS OF CONSTANT NOISE FIGURE {KHz 2eec 20 . 02 Ta 1 Ob Oo $6 8 10 20 40 6060100 200 400 600 8001000 2000 Ol 02 04 06.0801 0.2 04 060810 2.0 4.9 6.0 6.0 10.0 Te (aa) Ig {NMA 355