Central
Semiconductor Corp.
TM
PR
OCESS
CP317
Small Signal T
r
ansistor
NPN - RF T
ransistor Chip
PRINCIP
AL
DEVICE TYPES
CMPT918
2N918
2N2857
2N5179
2N5770
BFY90
PN3563
PN3564
Process
EPIT
AXIAL
PLANAR
Die Size
14.5 x 14.5 MILS
Die Thickness
9.0 MILS
Base Bonding Pad
Area
2.4 x 2.2 MILS
Emitter Bonding Pad
Area
2.4 x 2.2 MILS
T
op Side Metalization
Al - 30,000Å
Back
Side Metalization
Au - 18,000Å
PROCESS DET
AILS
145 Adams Avenue
Hauppauge, NY
1
1788 USA
T
el:
(631) 435-1
1
10
Fax:
(631) 435-1824
www
.centralsemi.com
GEOMETR
Y
R2 (1-August 2002)
GROSS DIE PER 4 INCH W
AFER
53,730
BACKSIDE COLLECTOR
Central
Semiconductor Corp.
TM
PR
OCESS
CP317
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY
1
1788 USA
T
el:
(631) 435-1
1
10
Fax:
(631) 435-1824
www
.centralsemi.com
R2 (1-August 2002)
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