IRFP4321PbF
2www.irf.com
S
D
G
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.17mH
RG = 25Ω, IAS = 50A, VGS =10V. Part not recommended for use
above this value.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 150 ––– mV/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 12 15.5 mΩ
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 1.0 mA
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
RG(int) Internal Gate Resistance ––– 0.8 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 130 ––– ––– S
QgTotal Gate Charge ––– 71 110 nC
Qgs Gate-to-Source Charge ––– 24 –––
Qgd Gate-to-Drain ("Miller") Charge ––– 21 –––
td(on) Turn-On Delay Time ––– 18 ––– ns
trRise Time ––– 60 –––
td(off) Turn-Off Delay Time ––– 25 –––
tfFall Time ––– 35 –––
Ciss Input Capacitance ––– 4460 ––– pF
Coss Output Capacitance ––– 390 –––
Crss Reverse Transfer Capacitance ––– 82 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 78cA
(Body Diode)
ISM Pulsed Source Current ––– ––– 330 A
(Body Diode)d
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 89 130 ns ID = 50A
Qrr Reverse Recovery Charge ––– 300 450 nC VR = 128V,
IRRM Reverse Recovery Current ––– 6.5 ––– A di/dt = 100A/µs f
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 10V f
VDD = 75V
TJ = 25°C, IS = 50A, VGS = 0V f
integral reverse
p-n junction diode.
showing the
ID = 50A
RG = 2.5Ω
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mAd
VGS = 10V, ID = 33A f
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 150V, VGS = 0V, TJ = 125°C
MOSFET symbol
VDS = 75V
Conditions
VGS = 10V f
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Conditions
VDS = 25V, ID = 50A
ID = 50A
VGS = 20V
VGS = -20V