BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD241 Series TO-220 PACKAGE (TOP VIEW) 40 W at 25C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. This series is obsolete and not recommended for new designs. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL BD242 Collector-emitter voltage (RBE = 100 ) BD242A VCER BD242C BD242 Collector-emitter voltage (IC = -30 mA) Emitter-base voltage Continuous collector current BD242A BD242B BD242C UNIT -55 E T E L O S B O BD242B VALUE V CEO VEBO IC -70 V -90 -115 -45 -60 V -80 -100 -5 V -5 A -3 A Peak collector current (see Note 1) ICM Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 40 W 1/2LIC2 32 mJ Continuous base current Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. IB Ptot -1 2 Tj -65 to +150 TL 250 Tstg -65 to +150 A W C C C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.32 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , V BE(off) = 0, RS = 0.1 , VCC = -20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 5) BD242 -45 BD242A -60 BD242B -80 BD242C -100 TYP MAX V VCE = -55 V VBE = 0 BD242 -0.2 Collector-emitter VCE = -70 V VBE = 0 BD242A -0.2 cut-off current VCE = -90 V VBE = 0 BD242B -0.2 VCE = -115 V VBE = 0 BD242C -0.2 Collector cut-off VCE = -30 V IB = 0 BD242/242A -0.3 current VCE = -60 V IB = 0 BD242B/242C -0.3 VEB = -5 V IC = 0 Forward current VCE = -4 V IC = -1 A transfer ratio VCE = -4 V IC = -3 A -0.6 A IC = -3 A -4 V IC = -3 A Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio IB = VCE = UNIT mA mA -1 mA (see Notes 5 and 6) -1.2 V (see Notes 5 and 6) -1.8 V 25 (see Notes 5 and 6) 10 E T E L O S B O VCE = -10 V IC = -0.5 A f = 1 kHz 20 VCE = -10 V IC = -0.5 A f = 1 MHz 3 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN TYP MAX UNIT 3.125 C/W 62.5 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN ton Turn-on time IC = -1 A IB(on) = -0.1 A IB(off) = 0.1 A 0.2 s toff Turn-off time VBE(off) = 3.7 V RL = 20 tp = 20 s, dc 2% 0.3 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = -4 V tp = 300 s, duty cycle < 2% VCE(sat) - Collector-Emitter Saturation Voltage - V TCS632AH 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT TC = 25C TC = 80C 100 10 -0*01 -0*1 TCS632AB -10 -1*0 -0*1 IC = IC = IC = IC = -100 mA -300 mA -1 A -3 A E T E L O S B O -1*0 -10 -0*01 -0*1 IC - Collector Current - A -1*0 -10 -100 -1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1 TCS632AC VBE - Base-Emitter Voltage - V VCE = -4 V TC = 25C -0*9 -0*8 -0*7 -0*6 -0*5 -0*01 -0*1 -1 -10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS632AD tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation -10 -1*0 -0*1 BD242 BD242A BD242B BD242C E T E L O S B O -0*01 -1*0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AA Ptot - Maximum Power Dissipation - W 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.