VS-GB90DA60U
www.vishay.com Vishay Semiconductors
Revision: 23-Oct-17 1Document Number: 94771
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 90 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
•HEXFRED
® anti-parallel diodes with ultrasoft
reverse recovery
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
PRIMARY CHARACTERISTICS
VCES 600 V
IC DC 90 A at 90 °C
VCE(on) typical at 100 A, 25 °C 2.40 V
IF DC 108 A at 90 °C
Speed 8 kHz to 30 kHz
Package SOT-227
Circuit configuration Single switch with AP diode
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
Continuous collector current IC
TC = 25 °C 147
A
TC = 90 °C 90
Pulsed collector current ICM 300
Clamped inductive load current ILM 300
Diode continuous forward current IF
TC = 25 °C 180
TC = 90 °C 108
Gate-to-emitter voltage VGE ± 20 V
Power dissipation, IGBT PD
TC = 25 °C 625
W
TC = 90 °C 300
Power dissipation, diode PD
TC = 25 °C 379
TC = 90 °C 182
Isolation voltage VISOL Any terminal to case, t = 1 min 2500 V
VS-GB90DA60U
www.vishay.com Vishay Semiconductors
Revision: 23-Oct-17 2Document Number: 94771
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown
voltage VBR(CES) VGE = 0 V, IC = 250 μA 600 - -
V
Collector to emitter voltage VCE(on)
VGE = 15 V, IC = 100 A - 2.4 2.8
VGE = 15 V, IC = 100 A, TJ = 125 °C - 3 3.4
VGE = 15 V, IC = 100 A, TJ = 150°C - 3.3 -
Gate threshold voltage VGE(th)
VCE = VGE, IC = 250 μA 3 3.9 5.0
VCE = VGE, IC = 250 μA, TJ = 125 °C - 2.5 -
Temperature coefficient of threshold
voltage VGE(th)/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - -10 - mV/°C
Collector to emitter leakage current ICES
VGE = 0 V, VCE = 600 V - 7 100 μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C - 1.5 6.0 mA
VGE = 0 V, VCE = 600 V, TJ = 150 °C - 6 10
Forward voltage drop, diode VFM
IC = 100 A, VGE = 0 V - 1.6 2.1
VIC = 100 A, VGE = 0 V, TJ = 125 °C - 1.56 2.0
IC = 100 A, VGE = 0 V, TJ = 150 °C - 1.53 -
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Qg
IC = 100 A, VCC = 480 V, VGE = 15 V
- 460 690
nCGate to emitter charge (turn-on) Qge - 160 250
Gate to collector charge (turn-on) Qgc - 70 130
Turn-on switching loss Eon
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
Energy losses
include tail and
diode
recovery.
Diode used
60APH06
-0.39-
mJTurn-off switching loss Eoff -1.10-
Total switching loss Etot -1.49-
Turn-on delay time td(on) - 245 -
ns
Rise time tr-53-
Turn-off delay time td(off) - 240 -
Fall time tf-63-
Turn-on switching loss Eon
IC = 100 A, VCC = 360 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 125 °C
-0.52-
mJTurn-off switching loss Eoff -1.24-
Total switching loss Etot -1.76-
Turn-on delay time td(on) - 240 -
ns
Rise time tr-54-
Turn-off delay time td(off) - 250 -
Fall time tf-80-
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = 300 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 400 V,
VP = 600 V, L = 500 μH
Fullsquare
Diode reverse recovery time trr
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
-95-ns
Diode peak reverse current Irr -10- A
Diode recovery charge Qrr - 480 - nC
Diode reverse recovery time trr IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
- 144 - ns
Diode peak reverse current Irr -16- A
Diode recovery charge Qrr - 1136 - nC
VS-GB90DA60U
www.vishay.com Vishay Semiconductors
Revision: 23-Oct-17 3Document Number: 94771
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - Typical Collector to Emitter Voltage (V)
Fig. 3 - Maximum Allowable Forward Current vs.
Case Temperature, Diode Leg
Fig. 4 - Typical Forward Voltage Drop Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range TJ, TStg -40 - 150 °C
Junction to case IGBT RthJC
- - 0.20
°C/WDiode - - 0.33
Case to heatsink RthCS Flat, greased surface - 0.1 -
Weight -30- g
Mounting torque Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.8 (15.9) Nm (lbf.in)
Case style SOT-227
I
C
-
Continuous Collector Current (A)
Allowable Case Temperature (°C)
0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
DC
VCE - Collector-to-Emitter Voltage (V)
IC - Collector to Emitter Current (A)
0.0 1.0 2.0 3.0 4.0 5.0 6.0
0
200
100
50
150
250
300 VGE = 15V
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
IF - Continuous Forward Current (A)
Allowable Case Temperature (°C)
0 20 40 60 80 100 120 140 160 180 200
0
20
40
60
80
100
120
140
160
V
F
-
Forward Voltage Drop (V)
I
F
- Forward Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
40
80
120
160
200
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
VS-GB90DA60U
www.vishay.com Vishay Semiconductors
Revision: 23-Oct-17 4Document Number: 94771
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, VGE = 15 V
Fig. 9 - Typical IGBT Energy Losses vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V, Diode used: 60APH06
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 360 V,
Rg = 5 , VGE = 15 V, Diode used: 60APH06
V
GE
-
Gate-to-Emitter Voltage (V)
I
C
-
Collector-to-Emitter Current (A)
0
20
40
60
80
100
120
140
160
3.0 3.5 4.0 4.5 5.0 6.05.5 6.5
TJ = 150 °C
TJ = 25 °C
TJ = 125 °C
VCES - Collector-to-Emitter Voltage (V)
ICES - Collector Current (mA)
0.0001
0.001
0.01
0.1
1
10
100
0 100 200 300 400 500 600
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
V
GETH
-
Threshold Voltage (V)
I
C
(mA)
5
4
4.5
3
3.5
2
2.5
1
1.5
0.20 0.40 0.60 0.80 1.00
TJ =125 °C
TJ = 25 °C
V
CE
-
Collector-to-Emitter Voltage (V)
T
J
- Junction Temperature (V)
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
0 20 40 60 80 100 120 140 160
Ic = 30 A
Ic = 50 A
Ic = 100 A
Ic = 75 A
I
C
-
Collector Current (A)
Switching Energy (mJ)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Eon
Eoff
10 20 30 40 50 60 70 80 90 100 110 120
IC - Collector Current (A)
Switching Time (μs)
0.1
1
0.01
0 20 40 60 80 100 120
td(off)
td(on)
tf
tr
VS-GB90DA60U
www.vishay.com Vishay Semiconductors
Revision: 23-Oct-17 5Document Number: 94771
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
VCC = 360 V, VGE = 15 V, Diode used: 60APH06
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 360 V,
IC = 100 A, VGE = 15 V, Diode used: 60APH06
Fig. 13 - Typical Reverse Recovery Time vs. dIF/dt, of Diode
Fig. 14 - Typical Stored Charge vs. dIF/dt of Diode
Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt of Diode
Rg (Ω)
Energy Losses (mJ)
0.5
1
1.5
2
2.5
3
3.5
4
0
0 10 20 30 40 50
Eoff
Eon
R
g
(Ω)
0.01
0.1
1
0102030405060
Switching Time (μs)
td(off)
td(on)
tf
tr
40
60
80
100
120
140
160
180
200
100 1000
trr (ns)
diF/dt (A/μs)
25 °C
125 °C
IF = 50 A
VR = 200 V
0
500
1000
1500
2000
100 1000
Q
rr
(nC)
di
F
/dt (A/μs)
25 °C
125 °C
IF = 50 A
VR = 200 V
VS-GB90DA60U
www.vishay.com Vishay Semiconductors
Revision: 23-Oct-17 6Document Number: 94771
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics, IGBT
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics, Diode
Fig. 18 - IGBT Reverse BIAS SOA, TJ = 150 °C, VGE = 15 V
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC
I
C
(A)
1 10 100 1000
0
1
10
100
1000
V
CE
(V)
VS-GB90DA60U
www.vishay.com Vishay Semiconductors
Revision: 23-Oct-17 7Document Number: 94771
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
19a - Clamped Inductive Load Test Circuit 19b - Pulsed Collector Current Test Circuit
20a - Switching Loss Test Circuit
20b - Switching Loss Waveforms Test Circuit
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
50 V
1000 V
D.U.T.
L
VC *
2
1
Rg
VCC
D.U.T.
R = VCC
ICM
+
-
L
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
+
-
R
g
V
CC
+
-
t = 5 µs
t
d(on)
tf
tr
90 %
td(off)
10 %
90 %
10 %
5 %
VC
IC
Eon Eoff
Ets = (Eon + Eoff)
1
2
3
VS-GB90DA60U
www.vishay.com Vishay Semiconductors
Revision: 23-Oct-17 8Document Number: 94771
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Single switch with AP
diode D
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
1
-Insulated gate bipolar transistor (IGBT)
-Vishay Semiconductors product
2
- B = IGBT Gen 5
3
- Current rating (90 = 90 A)
4
- Circuit conguration (D = single switch with AP diode)
5
- Package indicator (A = SOT-227)
6
- Voltage rating (60 = 600 V)
8
7
-Speed/type (U = ultrafast IGBT)
Device code
51 32 4 6 7 8
GVS- B 90 D A 60 U
3 (C)
2 (G)
1, 4 (E)
1
43
2
Lead Assignment
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 02-Aug-12 1Document Number: 95423
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOT-227 Generation II
DIMENSIONS in millimeters (inches)
Note
• Controlling dimension: millimeter
38.30 (1.508)
37.80 (1.488)
-A-
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
6.25 (0.246)
6.50 (0.256)
25.70 (1.012)
24.70 (0.972)
2.10 (0.083)
2.20 (0.087)
-B-
R full
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
4 x
4.10 (0.161)
4.50 (0.177)
-C-
0.13 (0.005)
12.30 (0.484)
11.70 (0.460)
25.00 (0.984)
25.50 (1.004)
M M M
0.25 (0.010) CA B
4 x M4 nuts
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Vishay:
VS-GB90DA60U