ON Semiconductor NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. 2N6609 *ON Semiconductor Preferred Device 16 AMPERE COMPLEMENTARY POWER TRANSISTORS 140 VOLTS 150 WATTS * High Safe Operating Area (100% Tested) 150 W @ 100 V * Completely Characterized for Linear Operation * High DC Current Gain and Low Saturation Voltage * PNP hFE = 15 (Min) @ 8 A, 4 V VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A For Low Distortion Complementary Designs CASE 1-07 TO-204AA (TO-3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII *MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 140 Vdc Collector-Emitter Voltage VCEX 160 Vdc Collector-Base Voltage VCBO 160 Vdc Emitter-Base Voltage VEBO 7 Vdc Collector Current -- Continuous -- Peak (1) IC 16 30 Adc Base Current -- Continuous -- Peak (1) IB 4 15 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 150 0.855 Watts W/C TJ, Tstg -65 to +200 C Symbol Max Unit RJC 1.17 C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 9 1 Publication Order Number: 2N3773/D 2N3773 2N6609 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit *Collector-Emitter Breakdown Voltage (IC = 0.2 Adc, IB = 0) VCEO(sus) 140 -- Vdc *Collector-Emitter Sustaining Voltage (IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms) VCEX(sus) 160 -- Vdc Collector-Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) VCER(sus) 150 -- Vdc *Collector Cutoff Current (VCE = 120 Vdc, IB = 0) ICEO -- 10 mAdc *Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) ICEX -- -- 2 10 Collector Cutoff Current (VCB = 140 Vdc, IE = 0) ICBO -- 2 mAdc *Emitter Cutoff Current (VBE = 7 Vdc, IC = 0) IEBO -- 5 mAdc 15 5 60 -- -- -- 1.4 4 OFF CHARACTERISTICS (2) mAdc ON CHARACTERISTICS (2) DC Current Gain *(IC = 8 Adc, VCE = 4 Vdc) (IC = 16 Adc, VCE = 4 Vdc) hFE -- Collector-Emitter Saturation Voltage *(IC = 8 Adc, IB = 800 mAdc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc *Base-Emitter On Voltage (IC = 8 Adc, VCE = 4 Vdc) VBE(on) -- 2.2 Vdc Magnitude of Common-Emitter Small-Signal, Short-Circuit, Forward Current Transfer Ratio (IC = 1 A, f = 50 kHz) |hfe| 4 -- -- *Small-Signal Current Gain (IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz) hfe 40 -- -- IS/b 1.5 -- Adc DYNAMIC CHARACTERISTICS SECOND BREAKDOWN CHARACTERISTICS Second Breakdown Collector Current with Base Forward Biased t = 1 s (non-repetitive), VCE = 100 V, See Figure 12 (2) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. *Indicates JEDEC Registered Data. http://onsemi.com 2 2N3773 2N6609 NPN 300 200 PNP 300 200 150C 150C 100 100 -55C 25C 70 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 25C 50 VCE = 4 V 30 20 50 30 20 10 10 7.0 5.0 0.2 0.3 7.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 -55C 70 VCE = 4 V 5.0 0.2 0.3 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 2.0 1.6 IC = 4 A 1.2 IC = 8 A IC = 16 A 0.8 0.4 TC = 25C 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS) 2.0 3.0 2.0 1.6 IC = 4 A IC = 16 A 1.2 IC = 8 A 0.8 0.4 TC = 25C 0 0.05 0.07 0.1 Figure 8. Collector Saturation Region 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS) 5.0 2.0 IC/IB = 10 IC/IB = 10 1.6 V, VOLTAGE (VOLTS) 1.6 V, VOLTAGE (VOLTS) 2.0 3.0 Figure 9. Collector Saturation Region 2.0 1.2 0.8 20 Figure 7. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 10 VBE(sat) 0.4 0 0.2 0.3 25C 150C 150C VCE(sat) 1.2 VBE(sat) 0.8 25C 150C 150C 0.4 25C 25C VCE(sat) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 10. "On" Voltage Figure 11. "On" Voltage http://onsemi.com 3 10 20 2N3773 2N6609 IC, COLLECTOR CURRENT (AMP) 30 20 10 s 40 s 10 5.0 3.0 2.0 100 s 200 s 1.0 ms dc 100 ms 1.0 0.5 0.3 0.2 500 ms BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C, SINGLE PULSE SECOND BREAKDOWN LIMIT 0.1 0.05 0.03 3.0 200 300 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. POWER DERATING FACTOR (%) 100 80 60 THERMAL DERATING 40 20 0 0 40 80 120 TC, CASE TEMPERATURE (C) Figure 13. Power Derating http://onsemi.com 4 160 200 2N3773 2N6609 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N3773 2N6609 Notes http://onsemi.com 6 2N3773 2N6609 Notes http://onsemi.com 7 2N3773 2N6609 PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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