APT11058B2FLL APT11058LFLL 1100V 20A 0.580W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Increased Power Dissipation * Lower Miller Capacitance * Easier To Drive * Lower Gate Charge, Qg * Popular T-MAXTM or TO-264 Package * FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol VDSS ID B2FLL T-MAXTM TO-264 LFLL D G S All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT11058 UNIT 1100 Volts L A C I N H C N E T O I E T C MA N A OR V AD INF 20 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 568 Watts Linear Derating Factor 4.55 W/C VGSM PD TJ,TSTG 80 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts C 300 20 (Repetitive and Non-Repetitive) 1 Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX UNIT 1100 Volts 20 Amps (VGS = 10V, 0.5 ID[Cont.]) 0.580 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Ohms A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 050-7181 Rev - 4-2002 Symbol APT11058 B2FLL - LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP Ciss Input Capacitance VGS = 0V 4700 Coss Output Capacitance VDS = 25V 710 Crss Reverse Transfer Capacitance f = 1 MHz 134 VGS = 10V 172 VDD = 0.5 VDSS ID = ID [Cont.] @ 25C 24 109 VGS = 15V 16 VDD = 0.5 VDSS 8 ID = ID [Cont.] @ 25C 40 RG = 0.6 12 Qg Total Gate Charge 3 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) tr t d(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time MAX UNIT pF nC ns L A C I N H C N E T O I E T C MA N A OR V AD INF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions TYP Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ Peak Diode Recovery dv/dt MAX 20 Continuous Source Current (Body Diode) ISM dt MIN 80 (Body Diode) UNIT Amps (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts 5 18 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 340 Tj = 125C 640 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 1.78 Tj = 125C 4.47 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 11.4 Tj = 125C 16.4 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 12.50mH, R = 25, Peak I = 20A j G L temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 050-7181 Rev - 4-2002 0.40 (.016) 0.79 (.031) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 19.81 (.780) 20.32 (.800) 19.81 (.780) 21.39 (.842) Gate Drain Source Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 2.29 (.090) 2.69 (.106) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) UNIT 0.22 RJC Dimensions in Millimeters and (Inches) 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 C/W