DAT E DRAWN SEP.-28-`07 CHECKED SEP.-28-`07 CHECKED SEP.-28-`07 NAME APPROVED DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y n or u s e d for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. S P E C I F I C AT I O N Device Name SILICON DIODE Type Name YA862C08R Spec. No. MS5D3284 Fuji Electric Device Technology Co.,Ltd. MS5D3284 1/12 H04-004-07b Date Classification SEP.-28 Enactment -2007 Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Revised Records Ind. Content Applied date Issued date Drawn Checked Approved MS5D3284 2/12 H04-004-06b 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE YA862C08R 2.TYPE NAME,ORDERING TYPE NAME,COUNTRY CODE,PACKAGING ASSEMBLY LOCATION Type name Ordering type name Country code Packaging assembly location YA862C08R Blank Japan YA862C08R YA862C08R-P P Philippines Ordering type name Package type Out viewMarking Molding resin Characteristics YA862C08R YA862C08R-P TO-220 Page 9/12 Page 9/12 UL:V-0 Page 10/1212/12 Bar code label of EIAJ C-3 specification. Indispensable description items are shown as below. (1) Type name (2) Production code (3) Quantity (4) Lot (Date code) (5) Company code 4. RATINGS 4.1 MAXIMUM RATINGS (at Ta=25 unless otherwise specified.) Item Symbol Conditions Repetitive peak reverse voltage VRRM 50Hz square wave duty =1/2 Average output current Io Tc =126 Non-repetitive forward surge current ** IFSM Sine wave, 10ms 1shot Operating junction temperature Tj Storage temperature Tstg Ratings 80 Units V 10* A 125 -40150 -40150 A *Out put current of centertap full wave connection. **Rating per element 4.2 ELECTRICAL CHARACTERISTICS (at Ta=25 unless otherwise specified.) Item Symbol Conditions Forward voltage *** VF IF = 5 A Reverse current *** IR VR =VRRM Thermal resistance Rth(j-c) Junction to case ***Rating per element 4.3 MECHANICAL CHARACTERISTICS Mounting torque Approximate mass Recommended torque Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 3.ORDERING TYPE NAME,PACKAGE TYPE,OUT VIEWMARKING,MOLDING RESIN, CHARACTERISTICS Maximum 0.76 150 2.0 Units V A /W 0.30.5 2.0 Nm g MS5D3284 3/12 H04-004-03a 5. TEST AND INSPECTION 5.1 STANDARD TEST CONDITION Standard test condition is Ta=2565%R.H. If judgment is no doubt, the test condition is possible to test in normal condition Ta=5354885%R.H. 5.2 STRUCTURE INSPECTION It inspect with eye and measure, Item 3 shall be satisfied. 5.3 FORWARD AND REVERSE CHARACTERISTICS It inspect on the standard condition, Item 4.2 shall be satisfied. 5.4 TEST 2 3 Mechanical test T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 1 Test items Terminal strength (Tensile) Terminal strength (Bending) Mounting strength 4 Vibration 5 Shock Solder ability 1 6 Solder ability 2 7 Resistance to soldering heat Testing methods and conditions Reference standard EIAJ ED4701 Pull force : 10N Force maintaining duration :101s EIAJ ED4701/401 method 1 Load force : 5N Number of times : 2times(90deg./time) EIAJ ED4701/401 method 3 EIAJ ED4701/402 method 2 Screwing torque value:(M3) : 4010Ncm Frequency : 100Hz to 2kHz Acceleration : 100m/s2 Sweeping time : 4min./1 cycle 4times for each X, Y&Z directions. 2 Peak amplitude : 15km/s Duration time : 0.5ms 3times for each X, Y&Z directions. Solder : Sn-37Pb Solder temp. : 2355 Immersion time : 50.5s Apply to flux Solder : Sn-3Ag-0.5Cu Solder temp. : 2455 Immersion time : 50.5s Apply to flux Solder temp. : 2605C Immersion time : 101s Number of times : 1time Fuji Electric Device Technology Co.,Ltd. DWG.NO. Test No. Sampling number 5 5 5 EIAJ ED4701/403 test code D 5 EIAJ ED4701/404 test code D 5 EIAJ ED4701/303 test code A 5 - EIAJ ED4701/302 test code A Acceptance number (0 : 1) 5 5 MS5D3284 4/12 H04-004-03a 1 2 Endurance test T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 3 Test items High temp. Storage Low temp. Storage Temperature humidity storage 4 Temperature humidity bias 5 Unsaturated pressurized vapor 6 Temperature cycle 7 Thermal shock 8 9 10 Steady state operating life Intermittent operating life High temp. Reverse bias Failure criteria Testing methods and conditions Temperature :stg max Test duration : 1000h Temperature :stg min Test duration : 1000h Temperature : 852C Relative humidity : 855% Test duration : 1000h Temperature : 852C Relative humidity : 855% Bias voltage : VRRM Test duration : 1000h Temperature : 1302C Relative humidity : 855% Vapor pressure : 230kPa Test duration : 48h High temp. side : Tstg max Room temp. : 535 Low temp. side : Tstg min Duration time : HT 30min,RT 5min LT 30min Number of cycles : 100 cycles High temp. side : 150+0/-5C Low temp. side : -65+5/-0C Duration time : HT 5min,LT 5min Number of cycles : 200 cycles Ta=255C Rated load Test duration : 1000h Tj=Tjmax 50 3min ON, 3min OFF Test duration : 10000cycles Temperature : Ta=100 C Bias voltage : VR=VRRM Test duration : 1000h IR USL x 2 VFUSL x 1.1 Reference standard EIAJ ED4701 Sampling number EIAJ ED4701/201 22 EIAJ ED4701/202 22 EIAJ ED4701/103 test code C 22 EIAJ ED4701/103 test code C 22 EIAJ ED4701/103 test code F 22 EIAJ ED4701/105 22 EIAJ ED4701/307 22 - Acceptance number (0 : 1) 22 EIAJ ED4701/106 22 EIAJ ED4701/101 22 USL : Upper specification limit Fuji Electric Device Technology Co.,Ltd. DWG.NO. Test No. MS5D3284 5/12 H04-004-03a 6.CAUTIONS Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. The products described in this specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (Terminal devices) Measurement equipment Machine tools AV equipment Electrical home appliances Personal equipment Industrial robots etc. The products described in this specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. If you are considering using these products in the equipment listed below, first check the system construction and required reliability, and take adequate Transportation equipment (automobiles, trains, ships, etc.) Backbone network equipment Traffic-signal control equipment Gas alarms, leakage gas auto breakers Submarine repeater equipment Burglar alarms, fire alarms, emergency equipment Medical equipment Nuclear control equipment etc. Do not use the products in this specification for equipment requiring strict reliability such as (but not limited to): Aerospace equipment Aeronautical equipment 7.WARNINGS The Diodes should be used in products within their absolute maximum rating (voltage, current, temperature, etc. ). The diodes may be destroyed if used beyond the rating. The equipment containing Diodes should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction (ex. fire, explosion etc...). Use the Diodes within their reliability and lifetime under certain environments or conditions. The Diodes may fail before the target lifetime of your products if used under certain reliability conditions. You must design the Diodes to be operated within the specified maximum ratings (voltage, current, temperature, etc. ) to prevent possible failure or destruction of devices. Consider the possible temperature rise not only for the junction and case, but also for the outer leads. Do not directly touch the leads or package of the Diodes while power is supplied or during operation, to avoid electric shock and burns. The Diodes are made of incombustible material. However, if a Diode fails, it may emit smoke of flame. Also, operating the Diodes near any flammable place or material may cause the Diodes to emit smoke or flame in case the Diodes become even hotter during operation. Design the arrangement to prevent the spread of fire. The Diodes should not used in an environment in the presence of acid, organic matter, or corrosive gas. (hydrogen sulfide, sulfurous acid gas.) The Diodes should not used in an irradiated field since they are not radiation proof. Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. safety measures such as a backup system to prevent the equipment from malfunctioning. MS5D3284 6/12 H04-004-03a INSTALLATION Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Table 1: Solder temperature and duration Solder Method Duration temperature 2605 101sec Flow 35010 3.50.5sec Soldering iron The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. When flow-soldering, be careful to avoid immersing the package in the solder bath. Refer to the following torque reference When mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will Table 2:Recommended tightening torque Package style Screw Recommended tightening torque 0.30.5Nm TO-220 M3 The heat sink should have a flatness within 30m and roughness within 10m. Also, keep the tightening torque within the limits of this specification. Improper handling may cause isolation breakdown leading to a critical accident. We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. STORAGE The Diodes must be stored at a standard temperature of 5 to 35 and relative humidity of 45 to 75%.If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. The Diodes should not be subjected to rapid changes in temperature to avoid condensation on the surface of the Diodes. Therefore, store the Diodes in a place where the temperature is steady. The Diodes should not be stored on top of each other, since this may cause excessive external force on the case. The Diodes should not be stored with the lead terminals remaining unprocessed. Rust may cause presoldered connections to go fail during later processing. The Diodes should be stored in antistatic containers or shipping bags. Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. increase the thermal resistance, both of which conditions may destroy the device. MS5D3284 7/12 H04-004-03a 8.APPENDIX This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ) , substances. This products does not contain Class-I ODS and Class-II ODS substances set force by `Clean Air Act of US' law. If you have any questions about any part of this specification, please contact Fuji Electric Device Technology or its sales agent before using the product Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. This specification does not confer any industrial property rights or other rights, nor constitute a Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. license for such rights. MS5D3284 8/12 H04-004-03a Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. TYPEYA862C08R YA862C08R-P Sn-Cu dipping (Pb1000ppm) MS5D3284 9/12 H04-004-03a Forward Power Dissipation 5 0.01 0.0 4 0 0.1 0.2 3 1 0.3 0.4 Square wave =120 Square wave =60 Square wave =180 Sine wave =180 DC 2 Reverse Power Dissipation R Forward Current 1 Tj=100 Tj=25 0.5 3 0.6 Forward Voltage 0.7 4 Average Forward Current 0.8 0.9 5 Reverse Current Tj=125 Tj=150 0 Fuji Electric Device Technology Co.,Ltd. DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Forward Characteristic (typ.) 105 Reverse Characteristic 10 10 1.0 0 7 6 6 0 10 360 10 20 R Forward Power Dissipation (max.) 20 30 30 Reverse Voltage 40 40 50 Reverse Voltage 50 60 60 (typ.) Tj=150 10 104 Tj=125 3 Tj=100 102 1 Tj= 25 0.1 100 10-1 70 70 80 360 80 90 4 Reverse Power Dissipation (max.) DC I0 VR 3 2 =180 2 1 1 Per 1element 0 90 MS5D3284 10/12 H04-004-03a Peak Half - Wave Current Cj Case Temperature DC 130 Sine wave =180 Square wave =180 Square wave =120 120 Square wave =60 100 90 0 1 5 10 Average Output Current 10 15 Fuji Electric Device Technology Co.,Ltd. Junction Capacitance (pF) Current Derating (Io-Tc) (max.) DWG.NO. FSM T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E le c t r ic D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 160 1000 Junction Capacitance Characteristic (max.) 150 140 100 110 360 I0 VR=40V 10 :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection 1 10 100 VR Reverse Voltage (V) 1000 1000 Surge Capability (max.) 100 10 Number of Cycles at 50Hz 100 MS5D3284 11/12 H04-004-03a (C/W) 1 10 -2 10 -1 t Time Fuji Electric Device Technology Co.,Ltd. DWG.NO. Transient Thermal Impedance T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f F u ji E le c t r ic D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h ird pa rt y nor u s ed for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. IFSM PeakHAlf-WaveCurrent (A) 1000 Surge Current Ratings (max.) 100 10 10 tTime (ms) Sinewave 100 10 0 1000 10 1 Transient Thermal Impedance (max.) Rth(j-c):2.0C/W 10 0 10 -1 (sec) 10 1 10 2 MS5D3284 12/12 H04-004-03a