YA862C08R-P - Fuji Electric Corp. of America



SPECIFICATION

Device Name ：

Type Name ：

Spec. No. ：

D A T E

APPROVED

N A M E

DRAWN

CHECKED

DWG.NO.

H04-004-07b

MS5D3284 1/12

Fuji Electric Device Technology Co.,Ltd.

CHECKED

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.

SEP.-28-‘07

SILICON DIODE

YA862C08R

MS5D3284



DWG.NO.

H04-004-06b

RevisedRecords



DWG.NO.

MS5D32842/12

Fuji Electric Device Technology Co.,Ltd.

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.

Date Classi-

fication Ind. Content Applied

date Drawn Checked Approved

EP.-28

-2007 Enactment ― ―――――― Issued

date

 



  

 



  



DWG.NO.



DWG.NO.

MS5D32843/12

H04-004-03a

Fuji Electric Device Technology Co.,Ltd.

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.

1. SCOPE

This specification provides the ratings and the test req uirement for FUJI SILICON DIODE

 YA862C08R

2.TYPE NAME,ORDERING TYPE NAME,COUNTRY CODE,PACKAGING ASSEMBLY LOCATION

Type name Ordering type name Country code Packaging assembly location

YA862C08R Blank Japan

YA862C08R YA862C08R-P P Philippines

3.ORDERING TYPE NAME,PACKAGE TYPE,OUT VIEW・MARKING,MOLDING RESIN, CHARACTERISTICS

Ordering type name Package type Out view・Marking Molding resin Characteristics

YA862C08R Page 9/12

YA862C08R-P TO-220 Page 9/12 UL:V-0 Page

10/12〜12/12

Bar code label of EIAJ C-3 specification. Indispensable description items are shown as below.

(1) Type name

(2) Production code

(3) Quantity

(4) Lot №(Date code)

(5) Company code

4. RATINGS

4.1 MAXIMUM RATINGS (at Ta=25℃ unless otherwise specified.)

Item Symbol Conditions Ratings Units

Repetitive peak reverse voltage VRRM 80 V

Average output current Io 50Hz square wave duty =1/2

Tc =126℃ 10* A

Non-repetitive for ward surge c urrent ** IFSM Sine wave, 10ms 1shot 125 A

Operating junction temperatur e Tj -40〜＋150 ℃

Storage temperature Tstg -40〜＋150 ℃

*Out put current of centertap full wave connection.

**Rating per element



4.2 ELECTRICAL CHARACTERISTICS (at Ta=25℃ unless otherwise specified.)

Item Symbol Conditions Maximum Units

Forward voltage *** VF I

F = 5 A 0.76 V

Reverse current *** IR V

R =VRRM 150 μA

Thermal resistance Rth(j-c) Junction to case 2.0 ℃/W

***Rating per element

4.3 MECHANICAL CHARACTERIST ICS

Mounting torque Recommended torque 0.3〜0.5 N・m

Approximate mass 2.0 g



DWG.NO.



DWG.NO.

MS5D32844/12

H04-004-03a

Fuji Electric Device Technology Co.,Ltd.

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.

5. TEST AND INSPECTION

5.1 STANDARD TEST CONDITION

Standard test condition is Ta=25℃、65%R.H.

If judgment is no doubt, the test condition is possible to test in normal condition

Ta=5〜35℃、48〜85%R.H.

5.2 STRUCTURE INSPECTION

It inspect with eye and measure, Item 3 shall be satisfied.

5.3 FORWARD AND REVERSE CHARACTERISTICS

It inspect on the standard condition, Item 4.2 shall be satisfied.

5.4 TEST

Test

No. Test

items Testing methods and conditions

Reference

standard

EIAJ

ED4701

Sampling

number Acceptance

number

1 Terminal

strength

(Tensile)

Pull force : 10N

Force maintaining duration :10±1s EIAJ

ED4701/401

method 1 5

2 Terminal

strength

(Bending)

Load force : 5N

Number of times : 2times(90deg./time) EIAJ

ED4701/401

method 3 5

3 Mounting

strength Screwing torque value:(M3) : 40±10N・cm EIAJ

ED4701/402

method 2 5

4 Vibration

Frequency : 100Hz to 2kHz

Acceleration : 100m/s2

Sweeping time : 4min./1 cycle

4times for each X, Y&Z directions.

EIAJ

ED4701/403

test code D 5

5 Shock Peak amplitude : 15km/s2

Duration time : 0.5ms

3times for each X, Y&Z directions.

EIAJ

ED4701/404

test code D5

Solder ability 1

Solder : Sn-37Pb

Solder temp. : 235±5℃

Immersion time : 5±0.5s

Apply to flux

EIAJ

ED4701/303

test code A5

Solder ability 2

Solder : Sn-3Ag-0.5Cu

Solder temp. : 245±5℃

Immersion time : 5±0.5s

Apply to flux

− 5

Mechanical test

7 Resistance to

soldering heat

Solder temp. : 260±5°C

Immersion time : 10±1s

Number of times : 1time

EIAJ

ED4701/302

test code A 5

(0 : 1)



DWG.NO.



DWG.NO.

MS5D32845/12

H04-004-03a

Fuji Electric Device Technology Co.,Ltd.

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.

Test

No. Test

items Testing methods and conditions Reference

standard

EIAJ ED4701

Sampling

number Acceptance

number

1 High temp.

Storage Temperature :Ｔstg max

Test duration : 1000h EIAJ

ED4701/201 22

2 Low temp.

Storage Temperature :Ｔstg min

Test duration : 1000h EIAJ

ED4701/202 22

3 Temperature

humidity

storage

Temperature : 85±2°C

Relative humidit y : 85±5%

Test duration : 1000h

EIAJ

ED4701/103

test code C 22

4 Temperature

humidity

bias

Temperature : 85±2°C

Relative humidit y : 85±5%

Bias voltage : VRRM

Test duration : 1000h

EIAJ

ED4701/103

test code C 22

5 Unsaturated

pressurized

vapor

Temperature : 130±2°C

Relative humidit y : 85±5%

Vapor pressure : 230kPa

Test duration : 48h

EIAJ

ED4701/103

test code F 22

6 Temperature

cycle

High temp. side : Tstg max

Room temp. : 5〜35℃

Low temp. side : Tstg min

Duration time : HT 30min,RT 5min LT 30min

Number of cycles : 100 cycles

EIAJ

ED4701/105 22

7 Thermal

shock

High temp. side : 150+0/-5°C

Low temp. side : -65+5/-0°C

Duration time : HT 5min,LT 5min

Number of cycles : 200 cycles

EIAJ

ED4701/307 22

8 Steady state

operating

life

Ta=25±5°C

Rated load

Test duration : 1000h − 22

9 Intermittent

operating

life

Tj=Tjmax 〜50℃

3min ON, 3min OFF

Test duration : 10000cycles

EIAJ

ED4701/106 22

Endurance test

10 High temp.

Reverse

bias

Temperature : Ta=100 °C

Bias voltage : VR=VRRM

Test duration : 1000h

EIAJ

ED4701/101 22

(0 : 1)

IR ≦USL x 2 USL : Upper specification limit

Failure criteria VF≦USL x 1.1



DWG.NO.



DWG.NO.

MS5D32846/12

H04-004-03a

Fuji Electric Device Technology Co.,Ltd.

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.

6.CAUTIONS

・Although Fuji Electric is continually improving product quality and reliability, a small percentage of

semiconductor products may become faulty. When using Fuji Electric semiconductor products in your

equipment, you are requested to take adequate safety measures to prevent the equipment from

causing physical injury, fire, or other problem in case any of the products fail. It is recommended to

make your design fail-safe, flame ret ardant, and free of malfunction.

・The products described in this specification are intended for use in the following electronic and

electrical equipment which has normal reliability requirements.

・Computers ・OA equipment ・Communications equipment (Terminal devices)

・Measurement equipment ・Machine tools ・AV equipment

・Electrical home appliances ・Personal equipment ・Industrial robots etc.

・The products described in this specification are not designed or manufactured to be used in equipment

or systems used under life-threatening situations. If you are considering using these products in the

equipment listed below, first check the system construction and required reliability, and take adequate

safety measures such as a backup system to prevent the equipment from malfunctioning.

・Transportation equipment (automobiles, trains, ships, etc.)

・Backbone network equipment ・Traffic-signal control equipment

・Gas alarms, leakage gas auto breakers ・Submarine repeater equipment

・Burglar alarms, fire alarms, emergenc y equipment ・Medical equipment

・Nuclear control equipment e t c.

・Do not use the products in this specification for equipment requiring strict reliability such as (but not

limited to):

・Aerospace equipment ・Aeronautical equipment

7.WARNINGS

・The Diodes should be used in products within their absolute maximum rating (voltage, current,

temperature, etc. ). The diodes may be destroyed if used beyond the rating.

・The equipment containing Diodes should have adequate fuses or circuit breakers to prevent the

equipment from causing secondary destruction (ex. fire, explosion etc…).

・Use the Diodes within their reliability and lifetime under certain environments or conditions.

The Diodes may fail before the target lifetime of your products if used under certain reliability

conditions.

・You must design the Diodes to be operated within the specified maximum ratings (voltage, current,

temperature, etc. ) to prevent possible failure or destruction of devices.

・Consider the possible temperature rise not only for the junction and case, but also for the outerleads.

・Do not directly touch the leads or package of the Diodes while power is supplied or during operation, to

avoid electric shock and bu rns.

・The Diodes are made of incombustible material. However, if a Diode fails, it may emit smoke of flame.

Also, operating the Diodes near any flammable place or material may cause the Diodes to emit smoke

or flame in case the Diodes become even hotter during operation.

Design the arrangement to prevent the spread of fire.

・The Diodes should not used in an environment in the presence of acid, organic matter, or corrosive gas.

(hydrogen sulfide, sulfurous acid gas.)

・The Diodes should not us ed in an irradiated field since they are not radiation proof.



DWG.NO.



DWG.NO.

MS5D32847/12

H04-004-03a

Fuji Electric Device Technology Co.,Ltd.

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.

INSTALLATION

・Soldering involves temperatures which exceed the device storage temperature rating. To avoid

device damage and to ensure reliability, observe the following guidelines from the quality

assurance standard.

Table 1: Solder temperature and duration

Method Solder

temperature Duration

Flow 260±5℃ 10±1sec

Soldering iron 350±10℃ 3.5±0.5sec

・The immersion depth of the lead should basically be up to the lead stopper and the distance

should be a maximum of 1.5mm from the device.

・When flow-soldering, be careful to avoid immersing the package in the solder bath.

・Refer to the following torque reference When mounting the device on a heat sink. Excess

torque applied to the mounting screw causes damage to the device and weak torque will

increase the thermal resistance, both of which conditions may destroy the device.

Table 2:Recommended tightening torque

Package style Screw Recommended tightening torque

TO-220 M3 0.3〜0.5N・m

・The heat sink should have a flatness within ±30μm and roughness within 10μm. Also, keep

the tightening torque within the limits of this specification.

・Improper handling may cause isolation breakdown leading to a critical accident.

・We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is

important to evenly apply the compound and to eliminate any air voids.

STORAGE

・The Diodes must be stored at a standard temperature of 5 to 35℃ and relative humidity of 45

to 75%.If the storage area is very dry, a humidifier may be required. In such a case, use only

deionized water or boiled water, since the chlorine in tap water may corrode the leads.

・The Diodes should not be subjected to rapid changes in temperature to avoid condensation on

the surface of the Diodes. Therefore, store the Diodes in a place where the temperature is

steady.

・The Diodes should not be stored on top of each other, since this may cause excessive external

force on the case.

・The Diodes should not be stored with the lead terminals remaining unprocessed. Rust may

cause presoldered connections to go fail during later processing.

・The Diodes should be stored in antistatic containers or shipping bags.



DWG.NO.



DWG.NO.

MS5D32848/12

H04-004-03a

Fuji Electric Device Technology Co.,Ltd.

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.

8.APPENDIX

・This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated

Diphenyl Ether ) , substances.

・This products does not contain Class-I ODS and Class-II ODS substances set force by ‘Clean Air

Act of US’ law.

・If you have any questions about any part of this specification, please contact Fuji Electric Device

Technology or its sales agent before using the product

・Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in

accordance with the instructions.

・This specification does not confer any industrial property rights or other rights, nor constitute a

license for such rights.



DWG.NO.



DWG.NO.

MS5D32849/12

H04-004-03a

Fuji Electric Device Technology Co.,Ltd.

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.





TYPE

：

C08



YA862C08R-P



Sn-Cu dipping (Pb＜1000ppm)



DWG.NO.



DWG.NO.

MS5D328410/12

H04-004-03a

Fuji Electric Device Technology Co.,Ltd.

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.

0123456

Per1element

Squarewaveλ=180°

Sinewaveλ=180°

Squarewaveλ=120°

Squarewaveλ=60°

ForwardPowerDissipation(max.)





ＷＦForwardPowerDissipation（Ｗ）

ＩｏAverageForwardCurrent（Ａ）

0 102030405060708090

ReversePowerDissipation(max.)





α=180°

ＰＲReversePowerDissipation（Ｗ）

ＶＲReverseVoltage（Ｖ）



360°

I0 α

360°

0.01

0.1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Tj=150℃

Tj=125℃

Tj=100℃

Tj=25℃

ForwardCharacteristic(typ.)

ＩＦForwardCurrent（Ａ）

ＶＦForwardVoltage（Ｖ）

0 102030405060708090

10-1

100

101

102

103

104

105

ReverseCharacteristic(typ.)

Tj=25℃

Tj=100℃

Tj=125℃

Tj=150℃

ＩRReverseCurrent（μＡ）

ＶRReverseVoltage（Ｖ）



DWG.NO.



DWG.NO.

MS5D328411/12

H04-004-03a

Fuji Electric Device Technology Co.,Ltd.

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.

051015

100

110

120

130

140

150

160

λ:Conductionangleofforwardcurrentforeachrectifierelement

Io:Outputcurrentofcenter-tapfullwaveconnection

Squarewaveλ=120°

Squarewaveλ=60°

Squarewaveλ=180°

Sinewaveλ=180°

CurrentDerating(Io-Tc)(max.)



ＴｃCaseTemperature（℃）

ＩｏAverageOutputCurrent（Ａ）







360°

VR=40V

1 10 100 1000

100

1000 Junction Capacitance Characteristic (max.)

Cj Junction Capacitance (pF)

VR Reverse Voltage (V)

1 10 100

100

1000

SurgeCapability(max.)



ＩFSMPeakHalf-WaveCurrent（Ａ）

NumberofCyclesat50Hz



DWG.NO.



DWG.NO.

MS5D328412/12

H04-004-03a

Fuji Electric Device Technology Co.,Ltd.

This material and the information herein is the property of Fuji Electric

Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

or disclosed in any way whatsoever for the use of any third party nor used

for the manufacturing purposes without the express written consent of

i Electric Device Technolo

Co.,Ltd.



1 10 100 1000

100

1000 SurgeCurrentRatings(max.)

IFSMPeakHAlf-WaveCurrent(A)

tTime(ms)Sinewave

10-2 10-1 100101102

10-1

100

101

Rth(j-c):2.0°C/W

Transient Thermal Impedance (max.)

Transient Thermal Impedance (°C/W)

t Time (sec)