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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP220N80 N-Channel SuperFET(R) II MOSFET 800 V, 23 A, 220 m Features Description * Typ. RDS(on) = 188 m SuperFET(R) II MOSFET is Fairchild Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. * Ultra Low Gate Charge (Typ. Qg = 78 nC) * Low Eoss (Typ. 7.5 uJ @ 400 V) * Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) * 100% Avalanche Tested * RoHS Compliant * ESD Improved Capability Applications * AC-DC Power Supply * LED Lighting D GD S G TO-220 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current S Parameter FCP220N80 800 - DC Unit V 20 - AC (f >1 Hz) - Continuous (TC = 25oC) 23 - Continuous (TC = 100oC) A 14.6 IDM Drain Current (Note 1) 57 A EAS Single Pulsed Avalanche Energy (Note 2) 645 mJ IAR Avalanche Current (Note 1) 4.6 A EAR Repetitive Avalanche Energy (Note 1) 27.8 mJ dv/dt - Pulsed V 30 MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL - Derate Above 25oC 20 V/ns 278 W 2.22 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FCP220N80 RJC Thermal Resistance, Junction to Case, Max. 0.45 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 (c)2015 Fairchild Semiconductor Corporation FCP220N80 Rev. 1.0 1 Unit o C/W www.fairchildsemi.com FCP220N80 -- N-Channel SuperFET(R) II MOSFET September 2015 Part Number FCP220N80 Top Mark FCP220N80 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 800 - - V - 0.8 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0 V, ID = 1 mA, TJ = 25C o ID = 1 mA, Referenced to 25 C VDS = 800 V, VGS = 0 V - - 25 VDS = 640 V, TC = 125oC - - 250 VGS = 20 V, VDS = 0 V - - 100 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 2.3 mA 2.5 - 4.5 V Static Drain to Source On Resistance - 188 220 m gFS Forward Transconductance VGS = 10 V, ID = 11.5 A VDS = 20 V, ID = 11.5 A - 25 - S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance - 3430 4560 pF - 100 135 pF - 0.3 - pF - 49 - pF VDS = 0 V to 480 V, VGS = 0 V - 304 - pF VDS = 640 V, ID = 23 A, VGS = 10 V - 78 105 nC - 16 - nC VDS = 100 V, VGS = 0 V, f = 1 MHz (Note 4) - 28 - nC f = 1 MHz - 0.78 - - 27 64 ns VDD = 400 V, ID = 23 A, VGS = 10 V, Rg = 4.7 - 19 48 ns - 75 160 ns - 2.6 15 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 23 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 57 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 23 A - - 1.2 V trr Reverse Recovery Time 560 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 23 A, dIF/dt = 100 A/s - 14 - C Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 4.6 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 23 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. (c)2015 Fairchild Semiconductor Corporation FCP220N80 Rev. 1.0 2 www.fairchildsemi.com FCP220N80 -- N-Channel SuperFET(R) II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 100 VGS = 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V ID, Drain Current[A] ID, Drain Current[A] 100 Figure 2. Transfer Characteristics 10 *Notes: 1. VDS = 20V 2. 250s Pulse Test o 150 C 10 o 25 C o -55 C *Notes: 1. 250s Pulse Test o 1 0.3 2. TC = 25 C 1 10 VDS, Drain-Source Voltage[V] 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 100 o *Note: TC = 25 C 0.3 VGS = 10V 0.2 VGS = 20V 0.1 0 12 24 36 ID, Drain Current [A] 48 VGS, Gate-Source Voltage [V] Capacitances [pF] 10 o 150 C o 25 C 1 10 Ciss 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz 10 1 2. 250s Pulse Test Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 Crss 1 10 100 VDS, Drain-Source Voltage [V] (c)2015 Fairchild Semiconductor Corporation FCP220N80 Rev. 1.0 0.6 0.9 1.2 1.3 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 100000 100 7 *Notes: 1. VGS = 0V 0.1 0.3 60 Figure 5. Capacitance Characteristics 10000 4 5 6 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 0.4 3 8 3 VDS = 160V VDS = 400V 6 VDS = 640V 4 2 0 800 *Note: ID = 23A 0 16 32 48 64 Qg, Total Gate Charge [nC] 80 www.fairchildsemi.com FCP220N80 -- N-Channel SuperFET(R) II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.8 1.2 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage *Notes: 1. VGS = 0V 2. ID = 1mA 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.4 2.0 1.6 1.2 0.8 0.4 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 25 100 10s 100s ID, Drain Current [A] *Notes: 1. VGS = 10V 2. ID = 11.5A 20 ID, Drain Current [A] 10 1ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 o 15 10 5 1. TC = 25 C o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 20 EOSS, [J] 15 10 5 0 0 160 320 480 640 VDS, Drain to Source Voltage [V] (c)2015 Fairchild Semiconductor Corporation FCP220N80 Rev. 1.0 800 4 www.fairchildsemi.com FCP220N80 -- N-Channel SuperFET(R) II MOSFET Typical Performance Characteristics (Continued) FCP220N80 -- N-Channel SuperFET(R) II MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve o ZJC(t), Thermal Response [ C/W] 1 0.5 0.1 0.2 0.1 PDM 0.05 0.01 t1 0.02 0.01 t2 *Notes: Single pulse o 0.001 -5 10 (c)2015 Fairchild Semiconductor Corporation FCP220N80 Rev. 1.0 1. ZJC(t) = 0.45 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 -2 10 10 t1, Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FCP220N80 -- N-Channel SuperFET(R) II MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms (c)2015 Fairchild Semiconductor Corporation FCP220N80 Rev. 1.0 6 www.fairchildsemi.com FCP220N80 -- N-Channel SuperFET(R) II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2015 Fairchild Semiconductor Corporation FCP220N80 Rev. 1.0 7 www.fairchildsemi.com SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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