T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 1 of 9
2N6764T1, 2N67 66T 1, 2N6 768T 1 an d
2N6770T1
Available on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/543
Qualified Levels:
JAN, JANT X, and
JANTXV
DESCRIPTION
Th is fa mily of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are
mili tary q uali fied up to the JANTXV level for high -reliability applications. These devices are
also available in a thru hole TO-204AE metal can package. M icrosem i also offers num er ous
ot her transistor produ cts to meet higher and lower po wer rat ings with various switch i ng s peed
requirem ents in both through-hole and surface-mount packages.
TO-254AA Package
Also available in:
TO-204AE (TO-3)
package
(leaded)
2N6764 & 2N6770
Important: For the latest information, visit our websit e http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6764, 2N6766, 2N6768 and 2N6770 number series.
• JAN, JANTX, and JANTXV qualifications are avail able per MIL-PRF-19500/543.
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only).
APPL ICAT IONS / BENEFITS
• Low-profile design.
• Military and other high-reliability applic ations.
MAXIMUM RATINGS @ TA = +25 ºC unles s other wise stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Paramete rs / Test Conditions
Symbol
Value
Unit
Junction & Stor age Temperature Range
T
J
&
Tstg
-55 to +150 °C
Thermal Resistance Junction-to-Case
RӨJC
0.83
oC/W
Total P ower Dissipation
A
(1)
PT
4
150
W
Drain-Source Voltage, dc
2N6766T1
2N6768T1
VDS
100
200
400
500
V
Gate-Source Voltage, dc
VGS
± 20
V
Drain Current, dc @ T
C
= +25 ºC
(2)
2N6764T1
2N6766T1
2N6768T1
2N6770T1
ID1
38.0
30.0
14.0
12.0
A
Drain Current, dc @ T
C
= +100 ºC
(2)
2N6764T1
2N6766T1
2N6768T1
2N6770T1
ID2
24.0
19.0
9.0
7.75
A
Off-State Current (Peak Total Value)
(3)
2N6764T1
2N6766T1
2N6768T1
2N6770T1
IDM
152
120
56
48
A (pk)
Source Current 2N6764T1
2N6766T1
2N6768T1
2N6770T1
IS
38.0
30.0
14.0
12.0
A
Notes featured on next page.
T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 2 of 9
2N6764T1, 2N67 66T 1, 2N6 768T 1 an d
2N6770T1
NOTES: 1. Derat e li near ly by 1.2 W/ºC for TC > +25 ºC.
2. The following formula derives the maximum theoretical ID limit. ID is limit ed by package and internal wires and may also be limited by
pin diameter:
3. IDM = 4 x ID1 as calculated in note 2.
M ECHANI CAL and PACKAGING
• CASE: Nickel plated, hermetically sealed, TO-254AA.
• TERMINALS: Ni plated, copper cored, kovar.
• MARKING: Manufacturers ID, part number, date code, Beo (Beryllium Oxide).
• WEIGHT: 6.5 grams.
• See Package Dimensions on last page.
PART NOME NCLAT URE
JAN 2N6764 T1 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see Electrical Characteris tics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
TO-254AA Package
SYMBOLS & DEFINITIONS
Symbol
Definition
di/dt
Rate o f chan ge of diode current while in reverse-recover y mode, recorded as maximum valu e.
IF
Forward current
RG
Gate drive impedance
VDD
Drain supply voltage
VDS
Drain source voltage, dc
VGS
Gate source voltage, dc
T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 3 of 9
2N6764T1, 2N67 66T 1, 2N6 768T 1 an d
2N6770T1
ELECTRICAL CHARACTE RISTICS @ TA = +25 ° C , unles s otherwise noted
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Drain-S ource Br eakdown Voltag e
VGS = 0 V, ID = 1.0 mA
2N6764T1
2N6766T1
2N6768T1
2N6770T1
V(BR)DSS
100
200
400
500
V
Gate-Sourc e Voltag e ( Threshold)
VDS ≥ VGS, ID = 0 .2 5 mA
VDS ≥ VGS, ID = 0 .2 5 mA, TJ = +125 °C
VDS ≥ VGS, ID = 0 .2 5 mA, TJ = -55 °C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
G ate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +125 °C
IGSS1
IGSS2
±100
±200 nA
Drain Current
VGS = 0 V, VDS = 80 V
VGS = 0 V, VDS = 16 0 V
VGS = 0 V, VDS = 32 0 V
VGS = 0 V, VDS = 40 0 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
IDSS1
25
µA
Drain Current
VGS = 0 V, VDS = 100 V, T J = + 125 °C
VGS = 0 V, VDS = 200 V, T J = + 125 °C
VGS = 0 V, VDS = 400 V, T J = +125 °C
VGS = 0 V, VDS = 500 V, T J = + 125 °C
2N6764T1
2N6766T1
2N6768T1
2N6770T1
IDSS2
1.0
mA
Drain Current
VGS = 0 V, VDS = 80 V, TJ = +125 °C
VGS = 0 V, VDS = 160 V, T J = + 125 °C
VGS = 0 V, VDS = 320 V, T J = +125 °C
VGS = 0 V, VDS = 400 V, T J = + 125 °C
2N6764T1
2N6766T1
2N6768T1
2N6770T1
IDSS3
0.25
mA
Static Drain -Sou r ce On-St ate Res ist anc e
VGS = 10 V, ID = 24.0 A pulsed
VGS = 10 V, ID = 19.0 A pulsed
VGS = 10 V, ID = 9. 0 A pul s e d
VGS = 10 V, ID = 7. 75 A p ul sed
2N6764T1
2N6766T1
2N6768T1
2N6770T1
rDS(on)1
0.055
0.085
0.3
0.4
Ω
Static Drain -Sou r ce On-St ate Res ist anc e
VGS = 10 V, ID = 38.0 A pulsed
VGS = 10 V, ID = 30.0 A pulsed
VGS = 10 V, ID = 14.0 A pulsed
VGS = 10 V, ID = 12.0 A pulsed
2N6764T1
2N6766T1
2N6768T1
2N6770T1
rDS(on)2
0.065
0.09
0.4
0.5
Ω
Static Drain -Sou r ce On-St ate Res ist anc e
TJ = +125 °C
VGS = 10 V, ID = 24.0 A pulsed
VGS = 10 V, ID = 19.0 A pulsed
VGS = 10 V, ID = 9. 0 A pul s e d
VGS = 10 V, ID = 7.75 A pulsed
2N6764T1
2N6766T1
2N6768T1
2N6770T1
rDS(on)3
0.094
0.153
0.66
0.88
Ω
Diode F orwar d Volt age
VGS = 0 V, ID = 38.0 A pulsed
VGS = 0 V, ID = 30.0 A pulsed
VGS = 0 V, ID = 14.0 A pulsed
VGS = 0 V, ID = 12.0 A pulsed
2N6764T1
2N6766T1
2N6768T1
2N6770T1
VSD
1.9
1.9
1.7
1.7
V
T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 4 of 9
2N6764T1, 2N67 66T 1, 2N6 768T 1 an d
2N6770T1
ELECTRICAL CHARACTE RISTICS @ TA = +25 ° C , unles s otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
G ate Charge:
On-State Gate Charge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
Qg(on)
125
115
110
120
nC
G ate t o Source C harge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A , VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
Qgs
22
22
18
19
nC
G ate t o D r ain C harge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
Qgd
65
60
65
70
nC
SW ITCHING CHARACTERIST ICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay tim e
ID = 38.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 10 0 V
ID = 14.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 20 0 V
I
D
= 12.0 A, V
GS
= +10 V, R
G
= 2.35 Ω, V
DD
= 25 0 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
td(on)
35
ns
Rise t i me
ID = 38.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 10 0 V
ID = 14.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 20 0 V
I
D
= 12.0 A, V
GS
= +10 V, R
G
= 2.35 Ω, V
DD
= 25 0 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
tr
190
ns
Turn-off delay time
ID = 38.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 10 0 V
ID = 14.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 20 0 V
I
D
= 12.0 A, V
GS
= +10 V, R
G
= 2.35 Ω, V
DD
= 25 0 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
td(off)
170
ns
Fall time
ID = 38.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 10 0 V
ID = 14.0 A, VGS = +10 V, RG = 2.35 Ω, VDD = 20 0 V
I
D
= 12.0 A, V
GS
= +10 V, R
G
= 2.35 Ω, V
DD
= 250 V
2N6764T1
2N6766T1
2N6768T1
2N6770T1
tf
130
ns
Diode Reverse Recovery Ti me
di/dt = 100 A/µ s, VDD ≤ 30 V, ID = 38.0 A
di/dt = 100 A/µ s, VDD ≤ 30 V, ID = 30.0 A
di/dt = 100 A/µ s, VDD ≤ 30 V, ID = 14.0 A
di/dt = 100 A/µ s, VDD ≤ 30 V, ID = 12.0 A
2N6764T1
2N6766T1
2N6768T1
2N6770T1
trr
500
950
1200
1600
ns
T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 5 of 9
2N6764T1, 2N67 66T 1, 2N6 768T 1 an d
2N6770T1
GRAPHS
t1, Rectangle Pulse Du r ation (s econds)
FIGURE 1
Thermal Respon se Curves
Thermal Response (ZtθJC)
T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 6 of 9
2N6764T1, 2N67 66T 1, 2N6 768T 1 an d
2N6770T1
GRAPHS (continued)
FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs
TC CASE TEMPERATURE (ºC) TC CASE TEMPERATURE (ºC)
For 2N67 64T1 For 2N6766T1
TC CASE TEMPERATURE (ºC) TC CASE TEMPERATURE (ºC)
For 2N6768T 1 For 2N67 70T1
I
D
DRAIN CURRE NT (AMPERES)
I
D
DRAIN CURRE NT (AMPERES)
ID, DRAIN CURRE NT (AMP ERES)
I
D,
DRAIN CURRE NT (AMP ERES)
T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 7 of 9
2N6764T1, 2N67 66T 1, 2N6 768T 1 an d
2N6770T1
GRAPHS (continued)
FIGURE 3 – Maximum Safe Operating Area
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6764T1
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6766T1
ID, DRAIN CURRE NT (AMPERES)
ID, DRAIN CURRE NT (AMPERES)
T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 8 of 9
2N6764T1, 2N67 66T 1, 2N6 768T 1 an d
2N6770T1
GRAPHS (continued)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6768T1
VDS, DRAIN-TO-SOURC E VOLT AG E (VOLTS) for 2N6770T1
ID DRAIN CURRENT (AMPERES)
ID DRAIN CURRENT (AMPERES)
T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 9 of 9
2N6764T1, 2N67 66T 1, 2N6 768T 1 an d
2N6770T1
PACKAGE DIM ENSIONS
NOTES:
Dimensions
Notes
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Protrusion thickness of ceramic eyelets inc luded in
dimension LL.
4. All terminals are isolated from case.
5. In accordance with ASME Y14.5M, diameters are
equivalent to Φx symbology.
Ltr
Inch
Millimeters
Min
Max
Min
Max
BL
0.535
0.545
13.59
13.84
CH
0.249
0.260
6.32
6.60
LD
0.035
0.045
0.89
1.14
LL
0.510
0.570
12.95
14.48
3,4
LO
0.150 BSC
3.81 BSC
LS
0.150 BSC
3.81 BSC
MHD
0.139
0.149
3.53
3.78
MHO
0.665
0.685
16.89
17.40
TL
0.790
0.800
20.07
20.32
TT
0.040
0.050
1.02
1.27
TW
0.535
0.545
13.59
13.84
Term 1
Drain
Term 2
Source
Term 3
Gate