SOLITRON DEVICES INC bh DEPfasbanoe aooiso7 2 ff, + 33-05 RADIATION RESISTANT NPN SILICON POWER TRANSISTORS 2N5527 2N5531 NPN SILICON POWER TRANSISTORS RADIATION RESISTANT J AMPERES FEATURES MEDIUM POWER RADIATION EXPOSURE LEVEL TO 5 x 1014 nvt a TOTAL NEUTRON FLUX GREATER THAN 10 KEV APPLICATIONS POWER AMPLIFIER RADIATION ENVIRONMENTS ULTRA HIGH FREQUENCY T0-5 ABSOLUTE MAXIMUM RATINGS 2N5527 2N9531 VoRo COLLECTOR-BASE VOLTAGE 60 V 90 V VcEO COLLECTOR-EMITTER VOLTAGE 40 V 75 V VERO EMITTER-BASE VOLTAGE 3V 3V Io CONTINUOUS COLLECTOR CURRENT 5A 5A ip CONTINUOUS BASE CURRENT 1A 1A Ty OPERATING JUNCTION TEMPERATURE -65C to +200C Tstg STORAGE TEMPERATURE 85C to +200C Rac THERMAL RESISTANCE, JUNCTION TO CASE 35C/W Pp POWER DISSIPATION (25C) 5 W 8-83-2R 15 SOLITRON DEVICES INC bb DER Gabbe goo1908 4 f T-33O5 _ RADIATION RESISTAN T NPN SILICON POWER TRANSISTORS . 2N5527 + =2N5531 ELECTRICAL CHARACTERISTICS ( Tc = 25C UNLESS OTHERWISE NOTED) CHARACTERISTICS SYMBOL MIN. MAX. UNITS COLLECTOR EMITTER SUSTAINING VOLTAGE" VcEo(sus) (I= 50 mA) 2N5527 40 Vv 2N5531 75 Vv (i= 50 mA, NOTE 2) 2N5527 40 Vv 2N5531 75 Vv COLLECTOR-CUTOFF CURRENT loEX (Vce = 30V, VBE = 0, Tg = 100C) 1.0 mA COLLECTOR-CUTOFF CURRENT logo (Veg= RATED) 1.0 mA (Vop= RATED, NOTE 2) 1.0 mA COLLECTOR-CUTOFF CURRENT -lopo (Vop= 30V) 0.1 mA (Vop = 30V, NOTE 2) 1.0 mA COLLECTOR-CUTOFF CURRENT ceo (Vcg= RATED) 50 mA EMITTER CUTOFF CURRENT leno (Veg = 3.0V) 1.0 mA (VER = 3.0V, NOTE 2) 1.0 mA EMITTER FLOATING POTENTIAL Vee (Vcp = RATED, Ip = 0) 1.0 v DC CURRENT GAIN) hee (Vc 5.0V, Ig = 0.5A) 2N5527 40 300 (Voge 5.0V, Ip = 0.5A) 2N5531 25 300 (VcE5.0V, Ic = 3.0A) 2N5527 40 200 (VoE 5.0, Ip = 3.0A) 2N5531 30 150 (VcE5.0V, Io = 5.0A) 2N5527 25 (VcE5.0V, Ic = 5.0A) 2N5531 20 (Voce 5.0V, Io = 3.0A NOTE 2) 2N5527 15 (VcE5.0V, Ic = 3.0A NOTE 2) 2N5531 7.0 COLLECTOR-EMITTER SATURATION VOLTAGE Voe(sat) (i = 3.0A, Ip = 0.3A) 2N5527 1.25 Vv (I = 3.0A, Ip = 0.5A) 2N5531 1.25 Vv (I = 5.04, Ip = 0.2A) 2N5527 5.0 Vv (I = 5.0A, Ip = 0.254) 2N5531 5.0 Vv (I = 3.0A, Ip = 0.3A, NOTE 2) 2N5527 2.0 Vv (i = 3.0A, Ip = 0.5A, NOTE 2) 2N5531 3.0 Vv BASE-EMITTER SATURATION VOLTAGE(?) VBE(sat) (ig = 3.0A, Ip = 0.3A) 2N5527 1.5 (i = 3.0A, Ip = 0.5A) 2N5531 1.5 Vv BASE-EMITTER VOLTAGE Vee (Voge = 5.0V, Ic = 3.0A) 1.5 Vv MAGNITUDE OF SMALL SIGNAL GAIN [hye] (Voce = 28V, Ic = 0.5A, f = 25 MHz) 8.0 SMALL SIGNAL GAIN he (Vcp = 5.0V, Ic = 0.5, f = 1.0 KHz) 2N5527 20 2N5531 15 OUTPUT CAPACITANCE Cobo (Vop = 30V, f = 1.0 MHz) 75 pF PROMPT PRIMARY PHOTO CURRENT (y = 1x 109 R/sec, = 1.0 MeV, Vcp = 10V) lppe 500 mA(PK) Note 1: Pulsed 300 psec, 1.8 Duty Cycle Note 2: After exposure, 1x 1014 nvt, FLUX = 10 KEV SOLITRON DEVICES INC bb DE) a3bacde 0002905 & LB --23-05 RADIATION RESISTANT NPN SILICON POWER TRANSISTORS _ . 2N5527 2N5531 SOAR VALUES TYPE NUMBER v1 V V2 2N5527 2N5531 30 65 35 30 25 bc 20 iN W 15 0 SAFE OPERATING AREA (SOAR) CONTINUOUS DC OPERATION Conditions: 1. Tj = Tcase + Oy-c PDC =< 200C 2. PDC = PDC max rating for specified transistor type 3. PDC = PDC = f (VcE) Area A 4. Voge = 0.8V1 rating for specified transistor type 2 52 ai x, (vce) Vec 2Vcg 2N5527 / 2N553! i0 20 30 40 50 VCE IN V PULSED OPERATION Conditions: 1. Ty = Tease + 8y-c Pavg = 200C ems ic vce dt < the allowed DC 2. Pavg = je 2ms 0 power dissipation for a Vog equal to the highest vce applied to the transistor 3. Operation in the active region should be limited to a maximum pulse width of tw = 1 ms for Area B, tw = 0.5 ms for Area C, tw = 0.25 ms for Area D, and tw = 0.10 ms for Area E. tr< 20 ys and tf < 20us for Areas B-E. ic (MAX) e- Voc MVE IC tw< tw< < tw< 1ms 0.5ms 0.25ms 0.1ms 0 0.3V; 0.4V4 0.6V4 0.8V4 17 SOLITRON DEVICES INC RR LL DE Pp a3banoe coolio 2 J r-33-05 RADIATION RESISTANT APN SILICON POWER TRANSISTORS Conditions: 2N5927 =2N5931 RESISTIVE AND CLAMPED INDUCTIVE SWITCHING (Switching from saturation to cutoff) 1.Ty = Te + O5- Pavg = 200C 2. Pavg = A ams 2ms 0 3. For the resistive loadiine, L = 0 and Vcc = V2 4. tr < 2us, tf = 2 ps in Area F ic vce dt = PDC max. A ad . ay 0-250 3a 352 L=1 mH 01a le NX SCOPE J a ig (1) Veo <1 VcE Conditions: UNCLAMPED SWITCHING (Switching from saturation to cutoff) 1.Ty = Tg + Oy- Pavg = 200C ams 2. Pavg = ji ic vce dt <= PDC max. 2ms 0 3. I peak < Ic max rating for specified transistor type 4. te LIC? < 80puWs p 1OA DIODE Vee s Regi 109 LIN pH Ls t mH 18 _ SOLITRON DEVICES INC bb veg 4368602 oOOLaLL 4 I 1-33-05 ~ RADIA TION RESISTANT NPN SILICON POWER TRANSISTORS 2N5527 9 2N5531 TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO Voce = SV 2N5527 hFE 0.1 1.0 10 ic COLLECTOR CURRENT-A TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO = SV 2N5531 FE 0. 1. 0 tc COLLECTOR CURRENT-A VCE;sat)-SATURATION VOLTAGE-V VCE\sat)-SATURATION VOLTAGE-V TYPICAL COLLECTOR-EMITTER SATURATION VOLTAGE 2N5527) @ = 1 x 10"nvt 10 C.1 0.1 1. 0 I COLLECTOR CURRENT-A TYPICAL COLLECTOR-EMITTER SATURATION VOLTAGE 2N5531 1 0.4 0.1 1.0 10 I COLLECTOR CURRENT-A 19