Field Effect Transistors Type Case 5 = Maximum Ratings Characteristics SPECIAL No. 9 8 at 25C amb. FEATURES 3 S~ |Yoe] Ic Pret loss Vos || Yis | Ves=o | Ciss }'ess | Ves jfosion | NF Vv mA WwW Vv Max. | Max. v Max. | Max. *_, _*__,, pf nA Q dB Min. | Max. Min. | Max. mA | mA umho | umho Silicon 2N2386 TOS P 20 10 0-5 - ~ 1000 _ 50 10 10 _ _ P-Channel 2N2497 TO5 P 20 10 0-5 1 3 10 1000 2000 32 10 10 3 |) NF measured at Field Effect 2N2498 TOS P 20 10 0-5 2 6 10 1500 3000 32 10 10 _ 3 Vos= 5V, Ip =1 mA 2N2499 TOS P 20 10 0-5 5 15 10 2000 4000 32 10 10 4 f=1 kc/s, Rg=1 MQ 2N2500 TO5 P 20 10 0-5 1 6 10 1000 2200 32 10 10 5 f=10 c/s, Rg =10 MQ 2N3328 TO72 P 20 1 _ 1 10 100 _ 4 1 15 _ 3 Vpos=10 V, f=1 Ke/s, Rg=10MQ 2N3329 TO72 P 20 10 0-3 1 3 10 1000 2000 20 10 10 _ 3 2N3330 | .TO72 P | 20 | 10 0-3 2 6 | -10] 1500] 3000] 20 | 10 | 10 |] | 3 barioenser as Seri 2N3331 | TO72 Pp | 20 | 10 03 s | 15 | -10| 2000] 4000] 20 | 10 | 10 | | 4 |Ja5%or we series 2N3332 ToO72 P 20 10 0-3 1 6 10 1000 2200 20 10 10 _ 5 NF measurements as for 2N2500 2N3573 TO72 P 25 1 _ 0-02 | 0-1 10 100 300 6 0-6 15 _ 3 2N3574 | TO72 P | 25 1 . | 0-075} 0-375] -10| 200] 6oo| 6 |oe | 15 | | 3 bee | wo tov 2N3575 TO72 P 25 1 _ 0-2 1 10 300 900 6 0-6 15 _ 3 ~ oe 2N3820 | SILECT P 20 10 0-2 0-3 15 | 10 800 | 5000] 32 20 10 _ _ Low Cost General Purpose 2N3909 To72 P 20 10 0-3 0-3 15 10 1000 5000 | 32 10 10 _ _ 2N3993 TO72 P 25 10 0:3 10 10 | 12000 6000 16 _ _ 150 _ Chopper Applications 2N3994 ToO72 P 25 10 0-3 2 _ 10 4000 | 10000 16 _ 300 _ Ip(ofR) =12nA max. Silicon 2N3819 | SILECT P 25 10 0-2 2 20 15 2000 | 6500 8 2 15 _ _ Low Cost General Purpose N-Channel 2N3821. TO72 EP 50 10 0-3 0-5 2-5 15 1500 4500 6 0-1 30 _ 5 NF at Re=1 mQ, f= Field Effect 2N3822 TO72 EP 50 10 0:3 2 10 15 3000 6500 6 0-1 30 5 4 Ke/s 2N3823 TO72 EP 30 10 0-3 4 20 15 3500 6500 6 0-5 20 _ 2:5 NF at 100 Mc/s, Rg =1KQ2 lYiel =3-2 min at 200 Mc/s 2N3824 TO72 EP 50 10 0-3 _ _ _ _ _ 0-1 30 250 _ Chopper. Ip(orr 20-1 nA, Crgss = Spt TIS34 SILECT EP 30 10 0-2 4 20 15 3500 6500 6 5 20 _ _ VHE Amplifier and Mixer TIS42 SILECT EP 25 10 0-25 10 _ 10 _ _ 18 5 15 70 High Speed Chopper TiSss SILECT EP 25 10 0-2 2:5 8 15 1300 4000 6 4 15 Mi h Yie Cree ratio TIS59 SILECT EP 25 10 0-2 6 25 15 2300 5000 6 4 15 9 fs \rss BF244A | SILECT EP 30 10 360 2 65 4000 6500 6 5 30 _ _ BF244B | SILECT EP 30 10 360 6-5 15 4000 | 6500 6 5 30 _ Specially Characterised BF244C | SILECT EP 30 10 360 15 25 4000 6500 6 5 30 _ _ for VHF operation BF245A TO18 EP 30 10 360 2 6-5 4000 6500 6 5 30 _ _ SILECT BF245B TO18 EP 30 10 360 6-5 15 4000 6500 6 5 30 _ _ SILECT BF245C TO18 EP 30 10 360 15 25 4000 6500 6 5 30 _ _ SILECT 5 (AVes, AVBE) Silicon Tises | Tos-2 { ep | so | 10 | 03+03] 05 s | 15 | 1500] 6000; 8 | 025} 30 | 500 | 5 10bnvec ATA N-Channel tis2s | Tos-2 | EP | 50 | 10 | 03403] 05 8 | 15 | 1500] 6000} 8 |025]) 30 | 500 | 5 |j 15 at Ip=0-5 MA Dual Tise7 | TOos-2 | EP | 50 | 10 | 03+03] 0-5 8 | 15 | 1500| 6000] 8 |o25 | 30 | 500 | |} 45) less. Matched 10} loss: Field Effect +15 Yis N.F, measured at VDS=-8 V Germanium fpo=5mA P Channel TIXM12 _ P 20 10 100 5 25 20 5000 | 20000 15 10 20 2 Re= 500 2 Field Effect TIXM301 TO7T2 P 20 10 150 5 25 20 6500 | 20000 15 6 20 _ 18 f=100 mc/s Storage Temperature range ~65C to 125C. ~ NOTE 1: The following symbols have been used throughout the Product Summary: Under Construction: Under hee: Under fr: Under Dissipation: A Alloyed * hte o fhib + dissipation at Tcase = 25C D Diffused A fhie E Epitaxial t - typical G Grown M Mesa 14 P Planar