BAT 64-07W
Oct-07-19991
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
VPS05605
4
2
1
3
32
EHA07008
14
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAT 64-07W 67s 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343
Maximum Ratings
Value UnitParameter Symbol
Diode reverse voltage V40
VR
250Forward current mA
IF
120Average forward current (50/60Hz, sinus) IFAV
Surge forward current (t < 10ms) IFSM 800
250 mW
Total power dissipation, TS ≤ 104 °C Ptot
°C
Tj
Junction temperature 150
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Junction - ambient 1) ≤455 K/W
RthJA
RthJS ≤185
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
BAT 64-07W
Oct-07-19992
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified.
Unit
ValuesSymbolParameter
typ. max.min.
DC characteristics
2-
IR
Reverse current
VR = 30 V
µA-
200Reverse current
VR = 30 V, TA = 85 °C
IR--
350
430
520
750
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
-
-
-
-
VFmV
320
385
440
570
AC characteristics
pF
Diode capacitance
VR = 1 V, f = 1 MHz
- 4
CT6
Forward current IF = f (VF)
TA = Parameter
10
10
10
0 0.5 1
BAT 64... EHB00057
V
F
Ι
F
V
10
10
2
1
0
-1
-2
mA
A
T= -40
25
85
125
C
C
C
C
Reverse current IR = f (VR)
TA = Parameter
10
10
10
0102030
BAT 64... EHB00058
V
R
Ι
R
V
10
µA
10
10
A
T= 125
85
25
2
1
0
-1
-2
-3
C
C
C
BAT 64-07W
Oct-07-19993
Forward current IF = f (TA*;TS)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
TA,TS
0
50
100
150
200
mA
300
I
F
0 20 40 60 80 100 120 °C 150
TA,TS
0
50
100
150
200
mA
300
I
F
TS
0 20 40 60 80 100 120 °C 150
TA,TS
0
50
100
150
200
mA
300
I
F
TA
0 20 40 60 80 100 120 °C 150
TA,TS
0
50
100
150
200
mA
300
I
F
Diode capacitance CT = f (VR)
f = 1MHz
0
0
EHB00059BAT 64...
C
VR
T
10 20 V 30
1
2
3
4
5
6
7
8
pF
10
Permissible Pulse Load RTHJS = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load IFmax/IFDC = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
I
Fmax
/ I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
